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Solid state ionic polishing of diamond
| Details |
Inventors: Cuomo, Jerome J.; Yehoda, Joseph E.;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: Beck; Shrive
Assistant Examiner: Chen; Bret
Attorney, Agent or Firm: Sterne, Kessler, Goldstein & Fox
A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air. |
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DETAILED DESCRIPTION Having thus described our invention, what we claim as new and desire to secure by Letters Patent is: 1.
A method for polishing a diamond film or a carbon nitride film, comprising the step of: (1) contacting the film to be polished with a surface of a superionic conductor layer to form an interface; and (2) supplying said superionic conductor layer with oxygen, wherein said superionic conductor layer transports the oxygen such that the oxygen reacts with carbon in the film, thereby polishing the film.
2.
The method of claim 1, wherein said oxygen is present at a partial pressure of about 0.
001 to 100 atm.
3.
The method of claim 2, wherein in step (2) said polishing is performed in a plasma chemical vapor deposition chamber, and the partial pressure of the oxygen is about 0.
001 to 1.
5 atm.
4.
The method of claim 1, wherein in step (2), said superionic conductor layer and the film are heated at a temperature of about 25.
degree.
to 650.
degree.
C.
5.
The method of claim 1, wherein in step (2), an electric field is applied across at least said superionic conductor layer.
6.
The method of claim 1, wherein said surface of said superionic conductor layer is patterned, and said polishing thereby transfers a negative imprint of said pattern to the film.
7.
The method of claim 6, wherein the film is a single crystal diamond film.
8.
The method of claim 6, wherein the film is a polycrystalline diamond film.
Description:
TECHNICAL FIELD This invention relates generally to polycrystalline diamond films, and specifically to an apparatus and method for solid-state ionic polishing of diamond.
BACKGROUND ART The deposition of polycrystalline diamond films is a well established technology, but there still remain several areas which need to be addressed: growth rate, heteroepitaxy, minimizing graphitic component, and control of the surface roughness, to name a few.
The surface roughness associated with the growth for polycrystalline diamond remains a problem for several areas, e
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MEMS 
