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MEMS

Surface-treatment-for-micromachining

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Surface treatment for micromachining

Details

Inventors: Kikuyama, Hirohisa; Miyashita, Masayuki; Yabune, Tatsuhiro; Ohmi, Tadahiro;
Assignee: Stella Chemifa Kabushiki Kaisha (Osaka-fu, JP)
Primary Examiner: Gulakowski; Randy
Assistant Examiner: Chaudhry; Saud
Attorney, Agent or Firm: Knuth; Randall J.

A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.

DETAILED DESCRIPTION According to the present invention a surface treatment for micromachining contains 0.
1 to 8 weight percent of hydrogen fluoride and more than 40 weight percent to not more than 47 weight percent of ammonium fluoride.
A surface treatment for micromachining according to the present invention is prepared by dissolving ammonium gas into a solution of hydrogen fluoride.
A surface treatment for micromachining according to the present invention contains 0.
001 to 1 weight percent of surfactant.

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