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Thin film actuated mirror array in an optical projection system
| Details |
Inventors: Hwang, Kyu-Ho;
Assignee: Daewoo Electronics Co., Ltd. (Seoul, KR)
Primary Examiner: Epps; Georgia
Assistant Examiner: Letendre; Suzanne
Attorney, Agent or Firm: Pillsbury Madison & Sutro LLP
Thin film AMA is disclosed. The thin film AMA has an active matrix, a supporting member, actuating parts and a reflecting member. The supporting member has a supporting line, a rectangular ring-shaped supporting layer, anchors. Insulating members are formed from top electrodes to the supporting layer. The anchors supporting the actuating parts are formed perpendicular to the actuating parts. The initial tiltings of the actuating parts are prevented because the stress concentration line doesn't generated. Therefore, the desired reflection angle of the reflecting member may be regular, so the light efficiency is enhanced and the quality of the picture projected onto the screen is increased. Also, the electrical shorts generated between the top electrodes and the bottom electrodes may be prevented by the insulating members, so point defects of pixels are effectively decreased. |
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DETAILED DESCRIPTION Accordingly, considering the conventional problems as described above, it is an object of the present invention to provide a thin film actuated mirror array in an optical projection system effectively preventing point defects of pixels without iso-cutting of bottom electrodes and enhancing the quality of a picture projected onto a screen by increasing the light efficiency of the incident light.
To accomplish the above object, there is provided in the present invention a thin film actuated mirror array in an optical projection system having an active matrix, a supporting member, a first actuating part, a second actuating part and a reflecting member.
The active matrix has a substrate including a metal oxide semiconductor transistor installed therein for switching operation and a first metal layer having a drain pad prolonged from a drain of the metal oxide semiconductor for transmitting a first signal.
The supporting member has a supporting line, a supporting layer, a first anchor and two second anchors.
The supporting line is formed above the active matrix and the supporting layer is integrally formed with the supporting line.
The supporting layer has a rectangular ring shape.
The first anchor and the second anchors are respectively formed between the active matrix and portions of the supporting layer adjacent to the supporting line.
The first actuating part has a first bottom electrode, a first active layer and a first top electrode.
The first bottom electrode receives the first signal.
The first bottom electrode is formed at a first portion of the supporting layer which is formed perpendicular to the supporting line and the first top electrode corresponds to the first bottom electrode.
The first top electrode receives a second signal and generates a first electric field.
The first active layer is formed between the first bottom electrode and the first top electrode and is deformed by the first electric field.
The second actuating part also has a second bottom electrode, a second active layer and a second top electrode
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MEMS 
