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Transistor and semiconductor device
| Details |
Inventors: Kawasaki, Masashi; Ohno, Hideo;
Assignee: Japan Science and Technology Corporation (Saitama, JP)
Primary Examiner: Eckert; George
Assistant Examiner: Diaz; Jose R.
Attorney, Agent or Firm: Neifeld IP Law, P.C.
A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material. |
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DETAILED DESCRIPTION What is claimed is: 1.
A transistor comprising: a transparent channel layer using any one of zinc oxide ZnO, zinc magnesium oxide Mg.
sub.
x Zn.
sub.
1-x O, zinc cadmium oxide Cd.
sub.
x Zn.
sub.
1-x O and cadmium oxide CdO; and a source, a drain and a gate each of which is in contact with said transparent channel layers and said gate is at least partially between said source and said drain; contacts to at least one of said source, said drain, and said gate, in which said contacts to at least one of said source, said drain, and said gate include a transparent conductive material.
2.
The transistor according to claim 1, the transistor further comprising: a gate insulating layer using a transparent insulating material comprising insulative ZnO doped with elements capable of taking a valence of 1 as a valence number or doped with group V element, a transparent insulating oxide, or a transparent insulator between said transparent channel layer and said gate.
3.
The transistor according to claim 2, the transistor further comprising; a transparent insulating substrate on which said transparent channel layer is formed.
4.
A semiconductor device, comprising: the transistor according to claim 2; and a light emission portion formed of a region continuous to said drain or said source of said transistor or a region of another semiconductor connected to said drain or said source, and a semiconductor layer jointed to said region.
5.
A semiconductor device, comprising: the transistor according to claim 2; and a capacitor formed by a region continuous to said drain or said source of said transistor or a region of another semiconductor or a conductor connected to said drain and said source, said gate insulating layer or another insulating layer on said source, said gate insulating layer or another insulating layer on said region, and a semiconductor layer or a conductive layer on said gate insulating layer or said another insulating layer.
6.
A semiconductor device, wherein the transistor according to claim 2 is stacked in plural with an insulating layer therebetween, the insulating layer using a transparent insulating material comprising insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements, a transparent insulating oxide, or a transparent insulator
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MEMS 
