Semiconductor sensor of electrostatic capacitance type |
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Microactuator with an improved semiconductor substrate and method of forming the same |
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Method of fabricating electronic devices |
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Resistive cross point array of short-tolerant memory cells |
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Surface-mount device and method for manufacturing the surface-mount device |
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Integrated circuits using optical fiber interconnects formed through a semiconductor wafer |
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High power semiconductor laser using optical integrated circuit |
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Distributed reflector laser having improved side mode suppression |
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Distributed feedback lasers |
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Yield superstructure for digital micromirror device
| Details |
Inventors: Hornbeck, Larry J.;
Assignee: Texas Instruments Incorporated (Dallas, TX)
Primary Examiner: Phan; James
Assistant Examiner:
Attorney, Agent or Firm: Brill; Charles A., Brady, III; Wade James, Telecky, Jr.; Frederick J.
A high-yield micromirror device and fabrication method. Address electrodes (310) and a separate mirror bias/reset conductor (312) are disposed on a substrate (304). A micromirror superstructure including torsion beam support posts (116), torsion beam hinges (120), a torsion beam yoke (114), a mirror support post (326), and a mirror (102) is fabricated above, and electrically connected to, the mirror bias/reset conductor (312) such that the torsion beam yoke (114) and mirror (102) are suspended above the address electrodes (310). A dielectric layer (328) is formed over the address electrodes (310). The dielectric layer (328), coupled with the elimination of upper address electrodes used in the prior art electrically insulates the address electrodes (310) from contact with the mirror superstructure and prevents conductive debris from shorting either the mirror superstructure or mirror bias/reset conductor (312) to the address electrodes (310). |
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DETAILED DESCRIPTION Objects and advantages will be obvious, and will in part appear hereinafter and will be accomplished by the present invention which provides a method and system for a high-yield micromirror device. According to one embodiment of the disclosed invention, a micromirror device is disclosed. The micromirror device comprises a substrate, at least one address electrode and mirror bias/reset conductor supported by the substrate, and a dielectric layer overlying at least one address electrode. A deflectable rigid member is supported over the substrate by a deformable element. In operation, a voltage differential between the address electrode and the rigid member is operable to create an electrostatic attraction between the address electrode and the rigid member thus causing the deflectable rigid member to deflect toward said address electrode. According to another embodiment of the disclosed invention, a method of forming a micromirror device is disclosed. The method comprises the steps of forming a mirror bias/reset conductor and address electrodes on a substrate, forming a dielectric layer over the address electrodes, and forming a deflectable rigid member supported by the substrate. According to yet another embodiment of the disclosed invention. , a method of forming a micromirror device is disclosed. The method comprises the steps of forming a mirror bias/reset conductor and address electrodes on a substrate, forming a dielectric layer over the address electrodes between the address electrodes and mirror bias/reset conductor, depositing a first spacer layer, depositing at least one metal layer on the first spacer layer, patterning the at least one metal layer to form the support structures, a deformable element, and a hinge yoke, forming a second spacer layer over portions of the first spacer layer not covered by the support structures, the deformable element, and the hinge yoke, depositing a third spacer layer over the second spacer layer, the support structures, the deformable element, and the hinge yoke, opening vias through the third spacer layer to the hinge yoke, and forming micromirrors on the third spacer layer
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