Enhancement-depletion logic based on gaas mosfets
To minimize the limitations in the prior art described above, and to minimize other limitations that will become apparent upon reading and understanding the present specification, the present inventio... Read More
Inventors: Mishra, Umesh Kumar; Parikh, Primit A.;, Assignee: The Regents of the University of California (Oakland, CA) |
Low threshold microcavity light emitter
It is a purpose of the present invention to provide a vertical cavity surface emitter wherein the spacer layer separating two cavity reflectors contains both internal optical and electrical confinemen... Read More
Inventors: Deppe, Dennis G.; Huffaker, Diana L.;, Assignee: Board of Regents, The University of Texas System (Austin, TX) |
Methods for identifying and removing an oxide-induced dead zone in a semiconductor device structure
The following summary of the invention is provided to facilitate an understanding of some of the innovative features unique to the present invention and is not intended to be a full description. A ful... Read More
Inventors: Biard, James R.; Guenter, James K.;, Assignee: Finisar Corporation (Sunnyvale, CA) |
Article comprising a Si-based photodetector
In a general aspect the invention is embodied in an article comprising an improved Si-based photodetector. More specifically, the photodetector comprises a crystalline Si (silicon) layer disposed on a... Read More
Inventors: Levine, Barry F.;, Assignee: Lucent Technologies Inc. (Murray Hill, NJ) |
High conductivity buried layer in optical waveguide
According to the present invention, an optical device is provided which has an active region for radiation propagation and injecting means for injecting charge carriers into the active region, charact... Read More
Inventors: Bozeat, Robert J; Nayar, Vishal;, Assignee: The Secretary of State for Defence (Farnborough, GB) |
Passive millimeter wave sensor using high temperature superconducting leads
OF THE PREFERRED EMBODIMENTS The present invention is best understood when considered with reference to the drawings, wherein the (not to scale) drawings are directed to particular embodiments intend... Read More
Inventors: Jack, Michael D.; Gordon, Eli E.;, Assignee: Raytheon Company (Waltham, MA) |
Method for manufacturing a semiconductor photo-sensor
It is an object of the present invention to provide a semiconductor photo-sensor having an improved characteristic which overcomes the problems encountered in the prior art semiconductor photo-sensors... Read More
Inventors: Yoshizawa, Tetsuo; Mihara, Akio; Yamashita, Hiromichi; Ohnuki, Ichiro; Suda, Yasuo; Ohtaka, Keiji; Sato, Toshiaki; Sugimoto, Taichi;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Conductive polymer film bonding technique
Referring to FIG. 1, a portion of a substrate is shown at 11 with an array of contact pads 12 formed e.g. by standard printed circuit techniques. The device chip or assembly 13 carries an array of bu... Read More
Inventors: Canning, Everett Joseph; Dutta, Ranjan;, Assignee: Lucent Technologies Inc. (Murray Hill, NJ) |
Method of paste printing using stencil and masking layer
The present invention is directed to a method for depositing a solder paste or other conductive or non-conductive material on a contact pad or other designated region of a substrate. The inventive met... Read More
Inventors: Chan, Albert W.; Lee, Michael G.;, Assignee: Fujitsu Limited (JP) |
Electronic component and method of production thereof
What is claimed is: 1. A surface acoustic wave device, comprising: a printed circuit board possessing a first surface and a second surface, concave parts being formed respectively on two side surfaces... Read More
Inventors: Furukawa, Osamu; Chiyoma, Hitoshi; Yabukawa, Kazuhisa; Donuma, Kenichi;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Semiconductor package having metal-pattern bonding and method of fabricating the same
FIG. 3 is a cross-sectional view illustrating a semiconductor package according to the embodiments of the present invention. As illustrated, there are provided a semiconductor chip (30) having bondin... Read More
Inventors: Park, Kye Chan;, Assignee: Dongbu Electronics Co., Ltd. (Seoul, KR) |
Method of vacuum packaging a semiconductor device assembly
Accordingly, it is an object of the present invention to provide a semiconductor chip device package having a vacuum within interconnect voids in the semiconductor chip device to reduce the interconne... Read More
Inventors: Quek, Shyue-Fong; Ang, Ting Cheong; Ong, Duay Ing; Loong, Sang Yee;, Assignee: Chartered Semiconductor Manufacturing Ltd. (Singapore, SG) |
Flip chip image sensor package fabrication method
In accordance with the present invention, an image sensor package includes an image sensor having an active area, which is responsive to radiation. The image sensor is mounted to a substrate, which is... Read More
Inventors: Glenn, Thomas P.; Webster, Steven; Hollaway, Roy Dale;, Assignee: Amkor Technology, Inc. (Chandler, AZ) |
Apparatus and method for leadless packaging of semiconductor devices
The present invention is directed to a leadless and interconnected semiconductor package. The package includes a first semiconductor chip with a second semiconductor chip positioned on the first chip ... Read More
Inventors: Jeung, Boon Suan; Poo, Chia Yong; Waf, Low Siu;, Assignee: Micron Technology, Inc. (Boise, ID) |
Flip-chip structure and method for high quality inductors and transformers
OF A PREFERRED EMBODIMENT Referring to the Figures by characters of reference, FIG. 1 illustrates a flip-chip structure for an inductor fabricated within a microchip in accordance with a preferred em... Read More
Inventors: Raskin, Glenn D.; Marlin, George W.; Mitchell, Douglas G.;, Assignee: Freescale Semiconductor, Inc. (Austin, TX) |
Hybrid solid state/electrochemical photoelectrode for hyrodrogen production
OF AN EXEMPLARY EMBODIMENT OF THE INVENTION Referring now to FIG. 1, semiconductor device 100 is adapted to produce one or more gases 60 upon exposure to light 81, for example sunlight, when semicond... Read More
Inventors: Miller, Eric L.; Rocheleau, Richard E.;, Assignee: University of Hawaii (Honolulu, HI) |
Solid-state image sensor with groove-situated transfer elements
The present invention has been accomplished to overcome the above-described disadvantages and it is an object of the present invention to provide a solid-state image sensor in which the areas occupied... Read More
Inventors: Kimata, Masafumi;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Multi-layered gate for a CMOS imager
The present invention provides a multi-layered gate stack process for use in fabricating a pixel sensor cell. The multi-layered gates have multiple layers including a conductive laver, an optional sil... Read More
Inventors: Rhodes, Howard E.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Solid-state imaging device
It is an object of the present invention to provide a solid-state imaging device that can raise detection sensitivity, raise output conversion efficiency, raise photoelectric conversion efficiency, ex... Read More
Inventors: Furumiya, Masayuki; Ohkubo, Hiroaki; Nakashiba, Yasutaka;, Assignee: NEC Electronics Corporation (Kanagawa, JP) |
CMOS image sensor capable of increasing punch-through voltage and charge integration of photodiode, and method for forming the same
The present invention is intended to overcome the above described disadvantages of the conventional technique. Therefore it is an object of the present invention to provide a CMOS image sensor and a f... Read More
Inventors: Shim, Jin-Seop;, Assignee: Hynix Semiconductor Inc. (Ichon-Shi, KR) |
Light-emitting semiconductor device using group III nitrogen compound
OF THE PREFERRED EMBODIMENT The invention-will be more fully understood by reference to the following examples. EXAMPLE 1 FIG. 1 shows a LED 10 embodied in Example 1. It has a sapphire (Al.sub.2O.sub... Read More
Inventors: Manabe, Katsuhide; Kato, Hisaki; Sassa, Michinari; Yamazaki, Shiro; Asai, Makoto; Shibata, Naoki; Koike, Masayoshi;, Assignee: Toyoda Gosei Co., Ltd. (Aichi-ken, JP) |
Robust Group III light emitting diode for high reliability in standard packaging applications
The present invention is a physically robust light emitting diode that offers high reliability in standard packaging and will withstand high temperature and high humidity conditions. As noted in the ... Read More
Inventors: Edmond, John Adam; Thibeault, Brian; Slater, Jr., David Beardsley; Negley, Gerald H.; Mieczkowski, Van Allen;, Assignee: Cree, Inc. (Durham, NC) |
Process for manufacture of thick film hydrogen sensors
Accordingly, is an object of the present invention to provide a new and improved system for thick film production of palladium hydrogen sensing elements with enhanced accuracy and repeatability. It is... Read More
Inventors: Perdieu, Louisa H.;, Assignee: Honeywell International Inc. (Morris Township, NJ) |
Hydrogen sensor apparatus and method of fabrication
OF THE INVENTION Referring to FIG. 1, one type of commercial hydrogen sensor apparatus 10 comprises a blue light source 13, an optical fiber 11 having a thin film palladium or platinum tip 12, and a ... Read More
Inventors: Mendoza, Edgar A.; Menon, Anil;, Assignee: Optech Ventures, LLC (Torrance, CA) |
Phased micro analyzer IV
What is claimed is: 1. A fluid analyzer comprising: a concentrator having a first solid-state thin-film heater-adsorber support channel of solid support; a phased heater array proximate to the first s... Read More
Inventors: Bonne, Ulrich;, Assignee: Honeywell International Inc. (Morristown, NJ) |
Method for forming Cu In Se.sub.2 films
What is claimed is: 1. A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magne... Read More
Inventors: Ermer, James H.; Love, Robert B.;, Assignee: Atlantic Richfield Company (Los Angeles, CA) |
Rapid process for producing a chalcopyrite semiconductor on a substrate
This object is achieved, according to the invention, by a process for producing a chalcopyrite semiconductor of the type ABC.sub.2, where A is copper, B is indium or gallium, and C is sulfur or seleni... Read More
Inventors: Karg, Franz; Probst, Volker;, Assignee: Siemens Aktiengesellschaft (Munich, DE) |
Method of manufacturing semiconductor devices
In view of the aforementioned problems of the conventional techniques, a primary object of the present invention is to provide a method of manufacturing semiconductor devices which is capable of manuf... Read More
Inventors: Momma, Genzo; Yuzurihara, Hiroshi;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Method of making compound semiconductor films and making related electronic devices
In accordance with the invention, a method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating ... Read More
Inventors: Basol, Bulent M.; Kapur, Vijay K.; Halani, Arvind T.; Leidholm, Craig R.; Roe, Robert A.;, Assignee: International Solar Electric Technology, Inc. (Inglewood, CA) |
Exposure method, exposure apparatus, and mask
This invention was conceived in view of the problems in the prior art, and it is an object of the invention to provide an exposure method, an exposure apparatus, and a mask that can reduce the extent ... Read More
Inventors: Tsuchiya, Makoto; Nara, Kei; Fujimori, Nobutaka; Toguchi, Manabu; Seki, Masami;, Assignee: Nikon Corporation (Tokyo, JP) |
MEMS 
