Method of formation of thin bonded ultra-thin wafers
As the demand for high performance and diverse applications increases, semiconductor devices must be made with thinner layers that have more abrupt transitions between the layers. Typical semiconducto... Read More
Inventors: Farmer, Kenneth R.; Digges, Jr., Thomas G.; Cook, N. Perry;, Assignee: Virginia Semiconductor, Inc. (Fredericksburg, VA) |
Method of anodic wafer bonding
The present invention comprises an improved process for protecting fragile microelectronic and microelectromechanical (MEM) structures on a low conductivity substrate during anodic wafer bonding of a ... Read More
Inventors: Hays, Kenneth M.;, Assignee: Boeing North American, Inc. (Seal Beach, CA) |
Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
As set forth below, the method for forming a MEMS device and the associated MEMS device of the present invention overcome the deficiencies identified with conventional methods. In particular, the meth... Read More
Inventors: Hays, Ken Maxwell;, Assignee: Honeywell, Inc. (Morristown, NJ) |
Economical silicon-on-silicon hybrid wafer assembly
According to the present invention, a technique for applying a thin film of material to a target wafer is provided. This technique separates thin films of material from a high-quality donor substrate ... Read More
Inventors: Henley, Francois J.; Cheung, Nathan W.;, Assignee: Silicon Genesis Corporation (Campbell, CA) |
Surface finishing of SOI substrates using an EPI process
According to the present invention, a technique for treating a film of material is provided. More particularly, the present invention provides a method for treating a cleaved surface and/or an implant... Read More
Inventors: Kang, Sien G.; Malik, Igor J.;, Assignee: Silicon Genesis Corporation (Campbell, CA) |
Microfabrication using germanium-based release masks
The invention is directed to a method of fabricating MEMS systems. The method includes: providing a substrate in which integrated circuits and a sacrificial layer have been formed, forming a release m... Read More
Inventors: Clark, William A.;, Assignee: Analog Devices IMI, Inc. (Berkeley, CA) |
Polycrystalline silicon-germanium films for micro-electromechanical systems application
The present invention is directed to the use of a Si.sub.1-x Ge.sub.x, material, where 0<x.ltoreq.1, for fabricating MEMS devices. The present invention will be described in terms of several repre... Read More
Inventors: Franke, Andrea; Howe, Roger T.; King, Tsu-Jae;, Assignee: The Regents of the University of California (Berkeley, CA) |
Process for sealing devices incorporating microstructures
OF THE INVENTION In the embodiments described hereinafter, the invention is used for protecting a microactuator for fine positioning of read/write heads of magnetic disks. This must not, however, be ... Read More
Inventors: Sassolini, Simone; Del Sarto, Marco; Frezza, Giovanni; Baldo, Lorenzo;, Assignee: STMicroelectronics S.r.l. (Agrate Brianza, IT) |
Solid state photosensitive devices
The present invention therefore relates to a solid state photosensitive device of the type comprising at least one photosensitive detector, each detector being connected to a charge integration cell, ... Read More
Inventors: Arques, Marc;, Assignee: Thomson-CSF (Paris, FR) |
Image sensor
The present invention, therefore, has been made in consideration of the above situation, and has as its object to provide the structure of an image sensor capable of efficiently collecting light in th... Read More
Inventors: Dobashi, Hideki;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Sog with moisture resistant protective capping layer
I claim: 1. A method of planarizing a semiconductor wafer having interconnect tracks metal of formed thereon, comprising applying a layer of inorganic spin-on glass to the wafer, curing said spin-on g... Read More
Inventors: Ouellet, Luc;, Assignee: Mitel Corporation (Kanata, CA) |
Method for using disposable hard mask for gate critical dimension control
A principal object of the present invention is to provide an effective and very manufacturable method of providing a necking-free and uniform critical dimension width for polysilicon across an uneven ... Read More
Inventors: Yoo, Chue-San;, Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW) |
Multi-element micro gyro
OF SPECIFIC EMBODIMENTS FIGS. 1 and 2 are isometric views showing a micro-gyro device. FIG. 1 shows first and second elements in the micro-gyro, which are movable within the gyro around different axe... Read More
Inventors: Hsu, Ying W.; Reeds, III, John W.; Saunders, Christ H.;, Assignee: Irvine Sensors Corporation (Costa Mesa, CA) |
Blazed grating light valve
The present invention is a light modulator. The light modulator includes elongated elements arranged parallel to each other and suspended above a substrate. The light modulator operates in a first dif... Read More
Inventors: Amm, David T.; Trisnadi, Jahja; Hunter, James; Gudeman, Christopher; Maheshwari, Dinesh;, Assignee: Silicon Light Machines Corporation (Sunnyvale, CA) |
Method and apparatus for detecting wafer flaw
An object of the present invention is to provide a detecting apparatus that can sift the abnormal wafer out immediately and quickly before wafer polishing beforehand so as to reduce the wafer broken d... Read More
Inventors: Chen, Chih-Kun; Kung, Yao-Hsiung; Lo, Tun Yuan;, Assignee: Nan Ya Technology Corporation (TW) |
Method of forming an isolation oxide for silicon-on-insulator technology
OF THE DRAWINGS A method of forming an isolation oxide on a silicon-on-insulator (SOI) substrate includes disposing a mask layer over a region of a silicon layer of the SOI substrate. Subsequently, t... Read More
Inventors: Park, Heemyong; Huang, Wen-Ling Margaret; Foerstner, Juergen; Racanelli, Marco;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Combined trench isolation and inlaid process for integrated circuit formation
OF THE PRESENT INVENTION Generally, the present invention is an improved method for manufacturing an integrated circuit (IC) having both trench isolation and MOS devices which contain damascene (i.e.... Read More
Inventors: Kao, Soolin; Ajuria, Sergio A.; Dow, Diann M.; Soggs, Susan E.;, Assignee: Motorola, Inc (Schaumburg, IL) |
Method of forming trench isolation
In view of the problems with the prior art described above, the present invention aims at providing means for accomplishing planarization of regions, where a plurality number of narrow convex regions ... Read More
Inventors: Tsutsui, Kenji;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Apparatus and method for forming controlled deep trench top isolation layers
OF PREFERRED EMBODIMENTS This disclosure relates to semiconductor devices and more particularly, to an apparatus and method for forming deep trench isolation layers for semiconductor memories. The pr... Read More
Inventors: Gruening, Ulrike;, Assignee: Infineon Technologies AG (Munich, DE) |
Fabrication of a shallow trench isolation by plasma oxidation
It is therefore a primary objective of the present invention to provide a method of fabricating an STI on a wafer with both superior gap filling and stress-releasing ability. Another objective of the ... Read More
Inventors: Chen, Tai-Ju; Tseng, Hua-Chou;, Assignee: United Microelectronics Corp. (Hsin-Chu, TW) |
Self-scanning light-emitting array and a driving method of the array
It is an object of the present invention to solve the conventional problems, e.g., the number of wire bonding pads, drive ICs, miniaturization, and a decrease in pitch, by providing a self-scanning fu... Read More
Inventors: Kusuda, Yukihisa; Tone, Kiyoshi; Yamashita, Ken; Tanaka, Shuhei;, Assignee: Nippon Sheet Glass Co., Ltd. (Osaka, JP) |
Efficient inspection of light-gathering rate of microlens in solid state imaging device
It is an object of the present invention to provide a solid state imaging device which makes it possible to detect a shape defect of a microlens with degree of reliability than ever by a visual inspec... Read More
Inventors: Furumiya, Masayuki; Nakashiba, Yasutaka; Yamada, Tohru; Yamamoto, Katsumi; Hara, Keiichi;, Assignee: NEC Corporation (Tokyo, JP); Toppan Printing Co., Ltd. (Tokyo, JP) |
Test structure for high precision analysis of a semiconductor
The present invention is directed to a method and system for testing a semiconductor device involving the detection of parasitic capacitance to improve testing, designing, and debugging semiconductor ... Read More
Inventors: Wu, David Donggang;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Semiconductor laser device and method of fabricating the same
Accordingly in view of the above circumstance the present invention contemplates a semiconductor laser device allowing a laser portion to have a satisfactory laser characteristic to provide increased ... Read More
Inventors: Morimoto, Taiji; Miyazaki, Keisuke; Tatsumi, Masaki; Wada, Kazuhiko; Ueda, Yoshiaki;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Miniaturized flow thermocycler
It is an object of the present invention provide a miniaturized thermocycler which, compared to the state of art, permits to more effective control of biochemical and biological molecular, respectivel... Read More
Inventors: Baier, Volker; Bodner, Ulrich; Dillner, Ulrich; Kohler, Johann Michael; Poser, Siegfried; Schimkat, Dieter;, Assignee: Biometra Biomedizinische Analytik GmbH (Goettingen, DE) |
Capacitance pressure sensor
The present invention relates to a microelectromechanical (MEM) capacitance pressure sensor comprising a capacitance pressure sensor integrated with electronic circuitry on a single substrate and a me... Read More
Inventors: Eaton, William P.; Staple, Bevan D.; Smith, James H.;, Assignee: Sandia Corporation (Albuquerque, NM) |
Process for microfabrication of an integrated PCR-CE device and products produced by the same
A submicroliter PCR type of a reaction chamber is taught for the amplification of specific diagnostic targets using PCR, among other things. Subject amplicons are then directly injected into microfabr... Read More
Inventors: Mathies, Richard A.; Simpson, Peter C.; Williams, Stephen J.;, Assignee: Affymetrix, Inc. (Santa Clara, CA) |
Process for manufacturing buried channels and cavities in semiconductor material wafers
The embodiments of the present invention provide a process that eliminates the disadvantages of the known solutions. According to an embodiment of the present invention, a process for manufacturing bu... Read More
Inventors: Barlocchi, Gabriele; Villa, Flavio; Corona, Pietro;, Assignee: STMicroelectronics S.r.l. (Agrate Brianza, IT) |
Integrated device for microfluid thermoregulation, and manufacturing process thereof
According to the embodiments of the present invention, an integrated device for microfluid thermoregulation and a manufacturing process thereof are provided. The integrated device included a semicondu... Read More
Inventors: Mastromatteo, Ubaldo; Villa, Flavio; Barlocchi, Gabriele;, Assignee: STMicroelectronics S.r.l. (Agrate Brianza, IT) |
Method of forming pattern
Accordingly, the present invention is directed to a method of forming a pattern that substantially obviates one or more problems due to limitations and disadvantages of the related art. An object of t... Read More
Inventors: Lee, Yun Bok; Lee, Dong Hoon;, Assignee: LG. Philips LCD Co., Ltd. (Seoul, KR) |
MEMS 
