Method and apparatus for preparing a plurality of dice in wafers
Methods and apparatuses for modulating an optical beam in an optical device are disclosed. In the following description numerous specific details are set forth in order to provide a thorough understa... Read More
Inventors: Headley, William R.; Paniccia, Mario J.;, Assignee: Intel Corporation (Santa Clara, CA) |
Microchannel system for fluid delivery
The realization of a buried flow channel in silicon in accordance with the present invention, depends upon the anisotropy of the silicon etch rate in EDP. For example, the (100) plane has an etch rat... Read More
Inventors: Wise, Kensall D.; Chen, Jingkuang;, Assignee: The Regents of the University of Michigan (Ann Arbor, MI) |
Solid state ink jet print head and method of manufacture
Ink jet printing mechanisms use pens that shoot droplets of colorant onto a printable surface to generate an image. Such mechanisms may be used in a wide variety of applications, including computer pr... Read More
Inventors: Weber, Timothy L.; Trueba, Kenneth E.; Harmon, John Paul;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
Wafer level contact sheet and method of assembly
The present invention relates to a system and method for performing reliability screening on semi-conductor wafers that uses a highly planar burn-in apparatus. The burn-in apparatus includes a burn-in... Read More
Inventors: Budnaitis, John J.;, Assignee: W. L. Gore & Associates, Inc. (Newark, DE) |
Packaging micromechanical devices
Referring to FIG. 1, a 3.times.3 micromechanical mirror array is shown by way of example of a MEMS device array that is advantageously packaged according to the invention. The 3.times.3 array of micr... Read More
Inventors: Degani, Yinon; Dudderar, Thomas Dixon; Tai, King Lien;, Assignee: Agere Systems Guardian Corp. (Orlando, FL); Lucent Technologies Inc. (Murray Hill, NJ) |
Gate stack for high performance sub-micron CMOS devices
A principle objective of the invention is to provide a gate electrode structure having sub-micron device feature lengths. Another objective of the invention is to provide a gate electrode structure ha... Read More
Inventors: Guo, Jyh-Chyurn;, Assignee: Taiwan Semiconductor Manufacturing Company (Hsin-Chu, TW) |
Sensitivity control for nanotube sensors
In accordance with one aspect of the present invention an electronic system for detecting analytes is provided. The system includes a signal control and processing unit in communication with at least ... Read More
Inventors: Bradley, Keith; Collins, Philip G.; Gabriel, Jean-Christophe P.; Gruner, George; Star, Alexander;, Assignee: Nanomix, Inc. (Emeryville, CA) |
Method of etching crystalline material with etchant injection inlet
The present invention has been accomplished in view of the various points as described above, and its object is to provide a fine working method of a crystalline material which cancels the problems of... Read More
Inventors: Watanabe, Nobuo; Tsukamoto, Takeo; Takeda, Toshihiko; Ono, Haruhito; Okunuki, Masahiko;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Selective formation of porous silicon
OF THE INVENTION The invention is based on forming a latent pattern in the surface of a silicon substrate that on exposure to etchant forms a pattern of porous silicon. The latent pattern is formed b... Read More
Inventors: Fathauer, Robert W.; Jones, Eric W.;, Assignee: The United States of America as represented by the Administrator of the (Washington, DC) |
Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
The ability to synthesize Si based materials with new optical, photonic and electronic properties is greatly desired. Unfortunately, despite considerable effort, Si based superlattices and quantum wel... Read More
Inventors: Fathauer, Robert W.; George, Thomas; Jones, Eric W.;, Assignee: The United States of America as represented by the Administrator of the (Washington, DC) |
Methodology for measuring and controlling film thickness profiles
The invention improves the control of film thicknesses within semiconductor manufacturing processes by evaluating an entire profile of a film layer (as opposed to an individual point, or the average ... Read More
Inventors: Hayes, Timothy S.; Triplett, Michael C.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Keepers for MRAM electrodes
A magnetic memory array, preferably comprising an MRAM, with a series of top electrodes in contact with a magnetic keeper on at least one surface, a series of bottom electrodes and magnetic bit region... Read More
Inventors: Tuttle, Mark E.;, Assignee: Micron Technology, Inc. (Boise, ID) |
All metal giant magnetoresistive memory
According to the present invention, a memory technology is provided which is based on structures which exhibit the property of giant magnetoresistance (GMR), and which overcomes the limitations of con... Read More
Inventors: Spitzer, Richard; Torok, E. James;, Assignee: Integrated Magnetoelectronics Corporation (Berkeley, CA) |
Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
OF THE DRAWING FIG. 1 illustrates a top view of a portion of a magneto-electronic component 100. As an example, magneto-electronic component 100 can be a magnetic memory component such as an MRAM, or... Read More
Inventors: Goronkin, Herbert; Rizzo, Nicholas D.; Engel, Bradlfy N.;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Methods of forming magnetoresisitive devices
In one aspect, the invention encompasses a method of forming a magnetoresistive device. A stack is formed, with the stack comprising a first magnetic layer, a second magnetic layer, and a non-magnetic... Read More
Inventors: Drewes, Joel A.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
Briefly described, and in accordance with a preferred embodiment thereof, the present invention relates to a structure of an electronic package of photo-sensing semiconductor devices and the method of... Read More
Inventors: Kim, Deok Hoon; Reche, John J. H.;, Assignee: Optopac, Inc. (Seoul, KR) |
Electrically programmable resistance cross point memory
Accordingly, a memory structure is provided, which comprises a substrate, a plurality of bottom electrodes overlying the substrate, a plurality of top electrodes overlying the bottom electrodes, and a... Read More
Inventors: Hsu, Sheng Teng; Zhuang, Wei-Wei;, Assignee: Sharp Laboratories of America, Inc. (Camas, WA) |
Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers
Floating trap type non-volatile memory devices according to some embodiments of the present invention include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the ga... Read More
Inventors: Lee, Chang-Hyun; Choi, Jung-Dal; Ye, Byoung-Woo;, Assignee: Samsung Electronics Co., Ltd. (KR) |
Semiconductor photodiode
What is claimed is: 1. A semiconductor photodiode, comprising: a substrate formed of one of an n-type Al.sub.x Ga.sub.1-x Sb semiconductor and an n-type Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semicon... Read More
Inventors: Miura, Shuichi; Mikawa, Takashi; Kuwatsuka, Haruhiko; Yasuoka, Nami;, Assignee: Fujitsu Limited (Kawasaki, JP) |
Multiple color detection elevated pin photo diode active pixel sensor
The present invention is a color detection active pixel sensor which provides efficient absorption of photons of light received by the color active detection pixel sensor while providing detection of ... Read More
Inventors: Cao, Min; Vande Voorde, Paul J.; Perner, Frederick A.; Vook, Dietrich W.;, Assignee: Agilent Technologies (Palo Alto, CA) |
Luminance-priority electronic color image sensor
What is claimed is: 1. A luminance priority color sensor comprising: a semiconductor substrate having a plurality of sensing elements disposed on the semiconductor substrate, where each sensing elemen... Read More
Inventors: Edgar, Albert D.;, Assignee: Applied Science Fiction, Inc. (Austin, TX) |
Process for integration of a high dielectric constant gate insulator layer in a CMOS device
It is an object of this invention to fabricate a complimentary metal oxide semiconductor (CMOS) device featuring a high k dielectric layer for use as a gate insulator layer. It is another object of th... Read More
Inventors: Wang, Ming-Fang; Chen, Chien-Hao; Yao, Liang-Gi; Chen, Shih-Chang;, Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW) |
Semiconductor device and a method of manufacturing the same
The present invention is made to solve such disadvantages as described above and contemplates a semiconductor device improved to be capable of stably forming a contact hole. The present invention also... Read More
Inventors: Maeda, Atsushi;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Method for integrating anti-reflection layer and salicide block
A principal object of the present invention is to provide a method for integrating fabricating processes of anti-reflection layer and fabricating processes of salicide block. Another object of the pre... Read More
Inventors: Chen, Chong-Yao; Lin, Chen-Bin; Liu, Feng-Ming;, Assignee: United Microelectronics Corp. (Hsin-Chu, TW) |
CMOS image sensor and manufacturing method thereof
In consideration of the above circumstances, an object of the present invention is to provide a CMOS image sensor and a manufacturing method thereof, for improving the sensitivity characteristics of t... Read More
Inventors: Ohkubo, Hiroaki;, Assignee: NEC Electronics Corporation (Kanagawa, JP) |
Photovoltaic component and module
OF THE INVENTION An advantage of the method according to the present invention is that no grooves have to be made in the passivating layer, and therefore the method according to the present invention... Read More
Inventors: hler, Wolfgang;, Assignee: Shell Oil Company (Houston, TX) |
Methods for fabricating monolithic device containing circuitry and suspended microstructure
According to a first aspect of the invention, a process for fabricating a monolithic device is provided. The process comprises the steps of providing a substrate having a first surface region for form... Read More
Inventors: Tsang, Robert W. K.; Core, Theresa A.;, Assignee: Analog Devices, Inc. (Norwood, MA) |
Q-controlled microresonators and tunable electric filters using such resonators
The present invention is directed to a resonator structure. The resonator structure comprises a first electrode at which an input signal may be applied and a second electrode at which an output signal... Read More
Inventors: Nguyen, Clark Tu-Cuong; Howe, Roger T.;, Assignee: The Regents of the University of California (Oakland, CA) |
Q-controlled microresonators and tunable electronic filters using such resonators
The present invention is directed to a resonator structure. The resonator structure comprises a first electrode at which an input signal may be applied and a second electrode at which an output signal... Read More
Inventors: Nguyen, Clark Tu-Cuong; Howe, Roger T.;, Assignee: The Regents of the University of California (Berkeley, CA) |
MEMS inkjet nozzle cleaning and closing mechanism
The present invention addresses the problems associated with inkjet printers subject to infrequent usage and ink build-up at its orifices, by developing a nozzle plate made of a silicon substrate whic... Read More
Inventors: Capurso, Robert G.; Robinson, Scott C.;, Assignee: Eastman Kodak Company (Rochester, NY) |
MEMS 
