High temperature superconductor tunable filter
OF THE INVENTION Turning now to FIGS. 1a and 1b, a preferred embodiment for a high-Q bandpass filter resonator based on a MEMS-like HTS split-plate variable capacitor with independent mechanical actu... Read More
Inventors: Eden, Richard C.; Willemsen, Balam A.; Matthaei, George L.;, Assignee: Superconductor Technologies, Inc. (Santa Barbara, CA) |
Method of making high aspect ratio features during surface micromachining
The above and other objects are provided by the following method. First, an insulating layer is deposited on a substrate. Next, a base in the form of a first conducting layer is deposited on the insul... Read More
Inventors: Pai, Minfan; Tien, Norman C.; Couillard, J. Greg;, Assignee: Corning Incorporated (Corning, NY) |
Process for producing a luminous element of group III nitride semi-conductor
It is therefore an object of the present invention is to provide a process for producing a light emitting diode or a semiconductor laser diode in which the mutual diffusion of the acceptor impurity in... Read More
Inventors: Miyachi, Mamoru; Tanaka, Toshiyuki; Kimura, Yoshinori; Takahashi, Hirokazu; Sato, Hitoshi; Watanabe, Atsushi; Ota, Hiroyuki; Akasaki, Isamu; Amano, Hiroshi;, Assignee: Pioneer Electronic Corporation (Tokyo, JP) |
Light-emitting device comprising gallium-nitride-group compound semiconductor
A gallium-nitride-group compound-semiconductor light-emitting device is formed by stacking an n-type clad layer, a light-emitting layer and a p-type clad layer of gallium-nitride-group compound semico... Read More
Inventors: Oku, Yasunari; Kamei, Hidenori;, Assignee: Matsushita Electric Industrial Co., Ltd. (JP) |
Organic, colored, electroluminescent display and the production thereof
1. A colored, organic electroluminescent display, comprising: a substrate; parallel first electrode strips on the substrate; a first insulating layer on the substrate and the first electrode strips, t... Read More
Inventors: Birnstock, Jan; Blaessing, Joerg; Heuser, Karsten; Stoessel, Matthias; Wittmann, Georg;, Assignee: Osram Opto Semiconductors GmbH (Regensburg, DE) |
Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
The present invention is an integrated circuit sensor passivation structure which includes passivation of electrical interconnections and electrical circuitry associated with the image sensor array. A... Read More
Inventors: Theil, Jeremy A.; Ray, Gary W.; Perner, Frederick A.; Cao, Min;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
Parallel, individually addressable probes for nanolithography
The present invention provides nanolithography, such as Dip Pen Nanolithography, as well as nanoscale imaging, with individually addressable probes in dip pen arrays. A probe array having a plurality ... Read More
Inventors: Liu, Chang; Zhang, Ming; Bullen, David Andrew;, Assignee: The Board of Trustees of the University of Illinois (Urbana, IL) |
Hybrid optical pickup with integrated power emission and reading photodetectors
The present invention provides a compact hybrid laser and photodetector device. A heat sink and a metal layer are bonded together, and then mounted on a circuit board. A semiconductor laser chip is mo... Read More
Inventors: Lee, Wai-Hon;, Assignee: Hoetron, Inc. (Sunyvale, CA) |
Nitrogen-free antireflective coating for use with photolithographic patterning
Embodiments of the invention pertain to methods of forming antireflective coatings (ARCs) that are substantially free of nitrogen and thus do not harbor amines that may migrate from the layer into an ... Read More
Inventors: Yeh, Wendy H.; Ahn, Sang; Bencher, Christopher Dennis; M'Saad, Hichem; Rathi, Sudha;, Assignee: Applied Materials, Inc. (Santa Clara, CA) |
Patterned growth of single-walled carbon nanotubes from elevated wafer structures
The present invention is believed to be applicable to a variety of different types of devices and implementations, and the invention has been found to be particularly suited for approaches involving ... Read More
Inventors: Yenilmez, Erhan; Dai, Hongjie;, Assignee: The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA) |
Capacitance substrate for a liquid crystal device and a projection type display device
To achieve the above objects, this invention is characterized by providing a substrate for a liquid crystal device, comprising: a plurality of data lines formed on the substrate; a plurality of scan l... Read More
Inventors: Murade, Masao;, Assignee: Seiko Epson Corporation (Tokyo, JP) |
Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film
A summary of typical examples of the invention described in this specification will be presented. That is, a display device according to the present invention is characterized in that, for example, a ... Read More
Inventors: Tanabe, Hideo; Shimomura, Shigeo; Ohkura, Makoto; Kurita, Masaaki; Kimura, Yasukazu; Nakamura, Takao;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Method for manufacturing diffraction grating of Laser Diode
The present invention is to provide a method for manufacturing the diffraction grating of a laser diode while preventing the conventional "photoresist peeling-off phenomenon" during selective formatio... Read More
Inventors: Kang, Jung-Koo;, Assignee: Samsung Electronics Co., Ltd. (Suwon-Si, KR) |
Radiation hard CMOS circuits in silicon-on-insulator films
In accordance with the present invention, means are provided for compensating for the threshold voltage shifts induced by radiation dosage in a Large Scale Integrated (LSI) circuit device made up of C... Read More
Inventors: Caviglia, Anthony L.; Cserhati, Andras F.; McKitterick, John B.;, Assignee: Allied-Signal Inc. (Morris Township, Morris County, NJ) |
Control of backgate bias for low power high speed CMOS/SOI devices
In carrying out principles of the present invention separate and opposite polarity voltages for backgate bias are provided for P channel and N channel devices by effectively providing independent and ... Read More
Inventors: Farb, Joseph E.; Li, Mei; Chang, Chen-Chi P.; Chin, Maw-Rong;, Assignee: Hughes Aircraft Company (Los Angeles, CA) |
High mobility integrated drivers for active matrix displays
The present invention is a method for fabricating high mobility TFTs and display drivers integrated on the active matrix substrate. Besides resulting in the single crystal silicon for high field effec... Read More
Inventors: Sarma, Kalluri R.;, Assignee: Honeywell Inc. (Minneapolis, MN) |
Insulated gate field effect transistor
It is therefore an object of the present invention to provide a novel insulated gate FET which is free from the abovesaid defects of the prior art. Another object of the present invention is to provid... Read More
Inventors: Yamazaki, Shunpei;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP) |
Manufacturing method for SOI-type thin film transistor
An object of the present invention is to provide a thin film transistor having an SOI structure in which the deterioration in the drain voltage resistance at the time of the stop of the operation can ... Read More
Inventors: Kondo, Shigeki;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Method of via formation for the multilevel interconnect integrated circuits
It is therefore an object of the present invention to provide a method for forming a contact via without damaging underlying conductive layers. It is another object of the present invention to protect... Read More
Inventors: Kalnitsky, Alexander;, Assignee: SGS-Thomson Microelectronics, Inc. (Carrollton, TX) |
Semiconductor device and method for forming the same
It is an object of the present invention to provide an insulated-gate FET free of the foregoing problems. The above object is achieved by an insulated-gate FET in which the channel length, i.e., the d... Read More
Inventors: Yamazaki, Shunpei; Mase, Akira; Hiroki, Masaaki; Takemura, Yasuhiko; Zhang, Hongyong; Uochi, Hideki;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP) |
TFT active matrix liquid crystal display with gate lines having two layers, the gate electrode connected to the wider layer only
It is a primary object of the present invention to provide a liquid crystal display device capable of reducing deterioration in OFF-characteristics of a TFT due to light incident or the TFT. To this e... Read More
Inventors: Someya, Sakae; Nashimoto, Ryuuzoh; Suzuki, Hirofumi; Yarita, Katsuhiko; Matsumoto, Shinji; Sasano, Akira; Taniguchi, Hideaki; Oritsuki, Ryouji;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Self-aligned double-gate MOSFET by selective lateral epitaxy
OF THE PREFERRED EMBODIMENT The invention is a novel method of fabricating a double-gate MOSFET structure. The method utilizes selective lateral epitaxial growth of silicon into a thin gap formed bet... Read More
Inventors: Taur, Yuan; Wong, Hon-Sum P.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Transistor device employing crystallization catalyst
As a result of an extensive study of the present inventors, it has been found that the crystallization of a substantially amorphous silicon film can be accelerated by adding a trace amount of a cataly... Read More
Inventors: Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Atsugi, JP) |
Method for forming semiconductor device with bottom gate connected to source or drain
In order to solve the above-noted defects or difficulties, according to the present invention, an additional gate electrode (hereinafter referred to as a bottom side gate electrode) is formed between ... Read More
Inventors: Takemura, Yasuhiko;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (JP) |
Non-volatile memory cell having dual gate electrodes
An object of the present invention is to provide a non-volatile semiconductor memory device capable of miniaturization exceeding the limit of the above mentioned MOS transistors, in more detail, capab... Read More
Inventors: Aozasa, Hiroshi; Hayashi, Yutaka;, Assignee: Sony Corporation (JP) |
Method of manufacturing a semiconductor device
An object of the present invention is to provide a technique to remove the influence of a metal element when a semiconductor device is manufactured by using a crystalline silicon film obtained by usin... Read More
Inventors: Takano, Tamae; Ohnuma, Hideto; Ohtani, Hisashi; Nakajima, Setsuo; Yamazaki, Shunpei;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-Ken, JP) |
Method of fabricating electro-absorption modulator integrated laser
It is, therefore, an object of the present invention to provide an EML fabricating method that obviates the need for a separate isolation etching control requirement and the ion implantation process. ... Read More
Inventors: Kim, Nam-Heon;, Assignee: Samsung Electronics Co., Ltd. (Suwon-Si, KR) |
Support post architecture for micromechanical devices
The present invention provides a structure and process for an improved support post structure, called a support pillar. The support pillar may be used in a micromechanical device, particularly a digit... Read More
Inventors: Smith, Gregory C.; Boysel, Robert M.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Support post architecture for micromechanical devices
The present invention provides a structure and process for an improved support post structure, called a support pillar. The support pillar may be used in a micromechanical device, particularly a digit... Read More
Inventors: Hornbeck, Larry J.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Light modulating microdevice and method
It is therefore an aim of the present invention to provide a novel hinge mechanism for micro mirror-based spatial light modulators used for at least one of amplitude and phase modulations of incident ... Read More
Inventors: Swart, Nicholas R.; Jerominek, Hubert;, Assignee: National Optics Institute (Quebec, CA) |
MEMS 
