Yield superstructure for digital micromirror device
Objects and advantages will be obvious, and will in part appear hereinafter and will be accomplished by the present invention which provides a method and system for a high-yield micromirror device. Ac... Read More
Inventors: Hornbeck, Larry J.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Projection system and mirror elements for improved contrast ratio in spatial light modulators
In order to minimize light diffraction along the direction of switching and more particularly light diffraction into the acceptance cone of the projection optics, in the present invention, mirrors are... Read More
Inventors: Ilkov, Fedor A.; Patel, Satyadev R.; Richards, Peter W.; Stockton, John K.;, Assignee: Reflectivity, Inc. (Sunnyvale, CA) |
Micromechanical acceleration sensor
The object of the invention is to provide a capacitive acceleration sensor in order to avoid the disadvantages stated above. According to the invention there is a micromechanical acceleration sensor c... Read More
Inventors: Flach, Georg; Nothelfer, Udo; Schuster, Gunther; Weber, Heribert;, Assignee: Temic Telefunken microelectronic GmbH (Heilbronn, DE) |
Low thermal strain flexure support for a micromechanical device
It is therefore an object of this invention to provide an improved low thermal strain flexure support for a micromechanical device. It is a further object of this invention to provide such an improved... Read More
Inventors: Greiff, Paul;, Assignee: The Charles Stark Draper Laboratory, Inc. (Cambridge, MA) |
Perpendicular torsion micro-electromechanical switch
In one aspect of the invention, the overall switch area of the MEM switch that is required to make good contact and provide the necessary electrostatic controls is greatly reduced by placing the contr... Read More
Inventors: Volant, Richard P.; Groves, Robert A.; Petrarca, Kevin S.; Rockwell, David M.; Stein, Kenneth J.;, Assignee: International Business Machines Corporation (Armonk, NY) |
MEMS enhanced capacitive pick-off and electrostatic rebalance electrode placement
A Micro Electro-Mechanical System (MEMS) capacitive acceleration sensor of the invention overcomes limitations of the prior art by providing additional degrees of freedom in positioning and sizing exc... Read More
Inventors: Yue, Aiwu; Leonardson, Ronald B.;, Assignee: Honeywell International, Inc. (Morristown, NJ) |
Method of manufacturing a magneto-resistive reading head with reduced side-lobe
It is an object of the present invention to provide an MR head suitable for high density recording and reproducing data to and from a narrow track and capable of improving the off-track characteristic... Read More
Inventors: Shouji, Shigeru; Toyoda, Atsushi;, Assignee: Yamaha Corporation (JP) |
Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
This invention pertains to a method of fabricating an MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with an upper unpinn... Read More
Inventors: Sandhu, Gurtej; Lee, Roger; Keller, Dennis; Doan, Trung T.; Hineman, Max F.; Earl, Ren;, Assignee: Micron Technology, Inc. (Boise, ID) |
Method to isolate device layer edges through mechanical spacing
The present invention provides an MRAM cell and a method of forming the same which minimizes the occurrence of electrical shorts during fabrication. According to the present invention, a first conduct... Read More
Inventors: Morgan, Paul A.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Magnetoresistive random access memory device structures
OF THE INVENTION The following detailed description of the invention is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore... Read More
Inventors: Grynkewich, Gregory W.; Deherrera, Mark; Durlam, Mark A.; Tracy, Clarence J.;, Assignee: Freescale Semiconductor, Inc. (Austin, TX) |
Torsion spring for MEMS structure
Accordingly, it is a feature of an embodiment of the present invention to provide a torsion spring for a MEMS structure having a bending stiffness that is greater than a torsional stiffness thereof, a... Read More
Inventors: Jeong, Hee-moon;, Assignee: Samsung Electronics Co., Ltd. (Kyungki-do, KR) |
Semiconductor sensor of electrostatic capacitance type
It is an object of the invention to provide a semiconductor sensor made by simple manufacturing processes and to which a signal processing circuit and a control circuit can be easily connected and whi... Read More
Inventors: Hirai, Yutaka;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Microactuator with an improved semiconductor substrate and method of forming the same
Accordingly, it is an object of the present invention to provide a novel microactuator free from the above problems. It is a further object of the present invention to provide a novel microactuator wh... Read More
Inventors: Suzuki, Kenichiro;, Assignee: NEC Corporation (Tokyo, JP) |
Method of fabricating electronic devices
The invention relates to a method of encapsulating devices, particularly those which require protection from moisture and gases, such as OLEDs. A getter layer is provided to protect the active compone... Read More
Inventors: Klausmann, Hagen; Fritz, Bernd;, Assignee: Osram Opto Semiconductors (Malaysia) Sdn. Bhd (Penang, MY) |
Resistive cross point array of short-tolerant memory cells
According to one aspect of the present invention, a data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and an electrically conductiv... Read More
Inventors: Nickel, Janice H.;, Assignee: Hewlett-Packard Development Company, L.P. (Houston, TX) |
Surface-mount device and method for manufacturing the surface-mount device
OF THE PREFERRED EMBODIMENT FIG. 1 is a sectional view of a light-emitting device according to a first embodiment of the present invention, and FIG. 2 is a plan view of the device. A light-emitting d... Read More
Inventors: Miura, Tsuyoshi;, Assignee: Citizen Electronics Co., Ltd. (Yamashi-Ken, JP) |
Integrated circuits using optical fiber interconnects formed through a semiconductor wafer
The above mentioned problems with integrated circuits and other problems are addressed by the present invention and will be understood by reading and studying the following specification. Integrated c... Read More
Inventors: Geusic, Joseph E.; Ahn, Kie Y.; Forbes, Leonard;, Assignee: Micron Technology, Inc. (Boise, ID) |
High power semiconductor laser using optical integrated circuit
OF THE INVENTION To achieve stable operation of a semiconductor laser at high power in the fundamental lateral mode, a semiconductor laser is utilized in combination with an optical integrated circui... Read More
Inventors: Laikhtman, Boris;, Assignee: |
Distributed reflector laser having improved side mode suppression
The present invention is applicable to lasers which include at least one diffraction grating acting as an end reflector element for the laser cavity. It will become apparent to those persons skilled ... Read More
Inventors: Cimini, Jr., Leonard J.; Habbab, Isam M. I.;, Assignee: AT&T Bell Laboratories (Murray Hill, NJ) |
Distributed feedback lasers
Ideally, the lengths of the first and second sections are each equal to half the total grating length. While the use of phase-shifted gratings is distinctly beneficial, there is still a demand for DFB... Read More
Inventors: Westbrook, Leslie D.;, Assignee: British Telecommunications public limited company (London, GB2) |
Semiconductor optical source capable of compensating for temperature-induced variation of laser oscillation threshold
I claim: 1. A semiconductor optical source, comprising: a first laser diode supplied with a signal current pulse and a first bias current for producing an output optical signal pulse in response to sa... Read More
Inventors: Odagawa, Tetsufumi;, Assignee: Fujitsu Limited (Kanagawa, JP) |
Wavelength-tunable, distributed bragg reflector laser having selectively activated, virtual diffraction gratings
The present invention relates to a distributed Bragg reflector laser, whose wavelength tuning range exceeds that of the DBR lasers according to document (1) and which has a large number of accessible ... Read More
Inventors: Delorme, Franck; Kazmierski, Christophe;, Assignee: France Telecom (Paris, FR) |
Wavelength division multiplexed optical communication systems employing uniform gain optical amplifiers
The present invention provides an improved wavelength division multiplexed optical communication system which includes optical amplifiers having substantially uniform gain in the spectral region from ... Read More
Inventors: Alexander, Stephen B.;, Assignee: Ciena Corporation (Linthicum, MD) |
Optoelectronic devices
What is claimed is: 1. A single cavity mode optoelectronic device, comprising: an optically active region allowing a single cavity mode to exist within a gain spectrum thereof, the active region being... Read More
Inventors: Dawson, Martin David; Bestwick, Timothy David; Takiguchi, Haruhisa;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Method of making distributed feedback laser having spatial variation of grating coupling along laser cavity length
As shown in FIG. 1, a single crystal semiconductive substrate 10 has a top major surface oriented parallel to the xy plane. Advantageously for mass making of many DFB lasers at the same time, the pat... Read More
Inventors: Dautremont-Smith, William Crossley; Hayes, Todd Robert;, Assignee: Lucent Technologies Inc. (Murray Hill, NJ) |
Strongly complex coupled DFB laser series
It is an object of the present invention to provide a structure of DFB semiconductor lasers which avoids the afore-mentioned problems. Thus, according to one aspect of the present invention there is p... Read More
Inventors: Hong, Jin; Makino, Toshihiko;, Assignee: Nortel Networks Limited (Montreal, CA) |
Transparent electrode film and group III nitride semiconductor device
OF THE PREFERRED EMBODIMENTS An example of the present invention will be described below. This example shows a light-emitting diode 10 and the configuration thereof is shown in FIG. 1. Specifications... Read More
Inventors: Uemura, Toshiya; Horiuchi, Shigemi;, Assignee: Toyoda Gosei Co., Ltd. (Aichi, JP) |
Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
This invention includes a bonding technique of a silicon wafer with a cavity to a silicon substrate via a pyrex glass layer using anodic bonding to form a capacitive pressure sensor with electrical fe... Read More
Inventors: Mikkor, Mati;, Assignee: Ford Motor Company (Dearborn, MI) |
Photovoltaic device
OF THE INVENTION This invention comprises a layered, thin film semiconductor device suitable for generating electrical current upon exposure to light energy, particularly solar energy. In one embodim... Read More
Inventors: Cunningham, Daniel W.; Rubcich, Marc P.;, Assignee: BP Corporation North America Inc. (Warrenville, IL) |
Flip chip package for micromachined semiconductors
OF THE PREFERRED EMBODIMENT Referring to FIGS. 1, 2 and 3, a flip chip package for micromachined semiconductors 10 is shown. First, second and third planar low temperature cofired ceramic (LTCC) laye... Read More
Inventors: Hinds, Ronald L.;, Assignee: CTS Corporation (Elkhart, IN) |
MEMS 
