Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
It is therefore an object of the invention to provide a process that allows controlled relaxation of mismatched semiconductor layers so that many different semiconductor materials can be created on co... Read More
Inventors: Fitzgerald, Eugene A.;, Assignee: Massachusetts Institute of Technology (Cambridge, MA) |
Method for making patterned implanted buried oxide transistors and structures
An object of this invention is to provide a method for implanting a patterned oxide layer in a semiconductor device. Another object of this invention is to provide an improved MOS transistor having re... Read More
Inventors: Kamins, Theodore I.; Colinge, Jean-Pierre; Marcoux, Paul J.; Roylance, Lynn M.; Moll, John L.;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data
Conventionally, it is difficult to integrate local image processing transistors with bipolar-based active pixel sensor cells, which are based on vertically-formed npn or pnp transistors, due to the ve... Read More
Inventors: Chi, Min-Hwa; Ching, Lih-Ying; Bergemont, Albert;, Assignee: Foveonics, Inc. (Cupertino, CA) |
Active pixel sensor using CMOS technology with reverse biased photodiodes
In summary, the present invention is an active pixel sensor that realizes in a single chip employing standard CMOS processes an image capturing function and various signal processing functions while p... Read More
Inventors: Tsang, Randy P.L.; Tse, Lawrence Tze-Leung; Donovan, Timothy J.; Yen, King Cheung;, Assignee: Chrontel, Inc. (San Jose, CA) |
Photogate sensor with improved responsivity
According to one aspect of the present invention, there is provided a depleted-gate photosensor, comprising a substrate comprising crystalline silicon, the substrate defining a main surface including ... Read More
Inventors: Hosier, Paul A.; Tandon, Jagdish C.; Tewinkle, Scott L.;, Assignee: Xerox Corporation (Stamford, CT) |
Chemical treatment of low-k dielectric films
OF THE INVENTION The present invention will be described in connection with the formation of multiple level metal conductors in an integrated circuit, and specifically in connection with the copper m... Read More
Inventors: Jin, Changming; Matz, Phillip D.; Park, Heungsoo; Smith, Patricia B.; McKerrow, Andrew J.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Optical semiconductor device and method of fabricating the same
It is, therefore, a principal object of the present invention to provide an optical semiconductor device having a buried heterostructure with a flat surface and a method of fabricating the same. To ac... Read More
Inventors: Kobayashi, Fumihiko; Miyazawa, Take; Mori, Hidefumi; Nakano, Jun-ichi;, Assignee: Nippon Telegraph and Telephone Corporation (Tokyo, JP) |
Ultrasonic image sensing array with acoustical backing
In order to achieve most if not all of the foregoing objects, there is provided in accordance with a first aspect of the present invention, an ultrasonic sensing array having a plurality of piezoelect... Read More
Inventors: Carson, Paul L.; Fitting, Dale W.; Robinson, Andrew L.; Terry, Jr., Fred L.;, Assignee: |
Process for vapor phase epitaxy of compound semiconductor
Accordingly, an object of the present invention is mainly to resolve the above mentioned problems and to provide a process for vapor phase epitaxy of a compound semiconductor which process can make an... Read More
Inventors: Okahisa, Takuji; Shimazu, Mitsuru; Matsushima, Masato; Miura, Yoshiki; Motoki, Kensaku; Seki, Hisashi; Koukitu, Akinori;, Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP) |
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
It is therefore an object of the present invention to provide improved methods of fabricating gallium nitride semiconductor layers, and improved gallium nitride layers so fabricated. It is another obj... Read More
Inventors: Linthicum, Kevin J.; Gehrke, Thomas; Thomson, Darren B.; Carlson, Eric P.; Rajagopal, Pradeep; Davis, Robert F.;, Assignee: North Carolina State University (Raleigh, NC) |
Control of juction depth and channel length using generated interstitial gradients to oppose dopant diffusion
I have provided a process for utilizing implant damage-induced interstitial gradients to inhibit dopant diffusion in crystalline silicon, thereby retaining shallow implanted junctions, and retarding l... Read More
Inventors: Buynoski, Mathew S.;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Solid-state image-sensing device and method for producing the same
Accordingly, it is an object of the present invention to provide a solid-state image-sensing device designed so that photoelectric conversion efficiency in sensor parts can be increased. It is another... Read More
Inventors: Suzuki, Ryoji; Ueno, Takahisa; Sumi, Hirofumi; Mabuchi, Keiji;, Assignee: Sony Corporation (Tokyo, JP) |
Bipolar structure with two base-emitter junctions in the same circuit
The invention relates to bipolar transistors using Si-Ge material. A feature of the invention is the presences of two types of bipolar SiGe transistor in the same integrated circuit. Another feature o... Read More
Inventors: Freeman, Gregory G.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Flip chip package with warpage control
To achieve the foregoing, the present invention provides a semiconductor flip chip package with warpage control and fabrication methods for such packages. The packages of the present invention include... Read More
Inventors: Fritz, Don; Wang, Wen-chou Vincent; Li, Yuan;, Assignee: Altera Corporation (San Jose, CA) |
Solid-state imaging device
It is an object of the present invention to overcome the problems in the prior art and to provide photoelectric conversion devices and image sensor arrays comprised thereof and image capture apparatus... Read More
Inventors: Ishida, Tomohisa; Ohkouchi, Naoki; Suzuki, Satoshi; Juen, Masahiro; Isogai, Tadao;, Assignee: Nikon Corporation (Tokyo, JP) |
Semiconductor device having cell-based basic element aggregate having protruding part in active region
It is therefore an object of the present invention to provide a semiconductor integrated circuit having a basic element aggregate that realizes uniformity in finished gate pattern (gate structure) aft... Read More
Inventors: Shibutani, Koji;, Assignee: Renesas Technology Corp. (Tokyo, JP) |
Method for manufacturing a light emitting device
OF THE PREFERRED EMBODIMENT FIG. 1 is a perspective view of an LED device of the present invention before the cover member being mounted, and FIG. 2 is a sectional view of the LED device after the co... Read More
Inventors: Noguchi, Katsuhiko; Horiuchi, Megumi;, Assignee: Citizen Electronics Co., Ltd. (Yamanashi-Ken, JP) |
Solid-state image sensing device having a vertical transfer line and a charge transfer region with buffer layer containing hydrogen between light shielding layer and insulating layer
The present invention has been made in view of those problems and it is therefore an object of the present invention to provide a solid-state image sensing device capable of suppressing smear and of r... Read More
Inventors: Fukusho, Takashi;, Assignee: Sony Corporation (Tokyo, JP) |
Actuator
What is claimed is: 1. An actuator comprising a movable part and a torsion bar for axially supporting said movable part in a rotatable manner about a single axis, said movable part being applied with ... Read More
Inventors: Mutoh, Kiyotaka; Ueda, Yuzuru; Asada, Norihiro;, Assignee: The Nippon Signal Co., Ltd. (Tokyo, JP) |
Method for producing semiconductor device
An object of the present invention is to provide a method capable of solving the above problems, and specifically to provide a process for producing a silicon semiconductor thin film having crystallin... Read More
Inventors: Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP) |
Scanning optical detection apparatus and method, and photoelectric conversion medium applied thereto
It is a first object of the present invention to provide an optical detection apparatus and an optical detection method therefor which can achieve an extremely high resolution (in the order of microme... Read More
Inventors: Nakagiri, Nobuyuki; Kondo, Hiroyuki; Suzuki, Yoshihiko;, Assignee: Nikon Corporation (Tokyo, JP) |
Asymmetric contacted metal-semiconductor-metal photodetectors
Having thus described the invention as above, We claim: 1. A photodetector comprising: a semiconductor substrate having an active region on one surface thereof, a first set of electrodes deposited on ... Read More
Inventors: Berger, Paul R.; Gao, Wei;, Assignee: University of Delaware (Newark, DE) |
Voltage tunable schottky diode photoemissive infrared detector
OF THE PREFERRED EMBODIMENT The present invention is a Schottky diode infrared detector with a voltage tunable cutoff wavelength. The tunability is due to modification of the Schottky diode band diag... Read More
Inventors: Jimenez, Jorge R.; Pellegrini, Paul W.;, Assignee: The United States of America as represented by the Secretary of the Air (Washington, DC) |
Semiconductor memory device with efficiently laid-out internal interconnection lines
An object of the present invention is to provide a semiconductor memory device having an internal interconnection layout allowing an array area to be used efficiently. Another object of the present in... Read More
Inventors: Yano, Kenji; Amano, Teruhiko;, Assignee: Renesas Technology Corp. (Tokyo, JP) |
Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography
One object of the invention is to merge HDI technology and optical waveguide technology, particularly through the use of adaptive lithography techniques, to produce optical interconnects. A related ob... Read More
Inventors: Wojnarowski, Robert John; Cole, Herbert Stanley; Henkes, John Lawrence;, Assignee: Martin Marietta Corporation (Bethesda, MD) |
Semiconductor device
What is claimed is: 1. A semiconductor device utilizing independent and bead-like spherical semiconductor elements comprising: a spherical crystal of p-type semiconductor or n-type semiconductor; a ph... Read More
Inventors: Nakata, Josuke;, Assignee: |
Lighting device
Therefore, with the foregoing in mind, it is an object of the present invention to provide a lighting device where a small number of photodetectors detect the light intensity incorporating light emitt... Read More
Inventors: Tamura, Tetsushi; Nagai, Hideo; Matsui, Nobuyuki; Shimizu, Masanori;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the other
An object of the present invention is to form a thin film semiconductor layer having a very low content of elements such as nickel by employing heat crystallization in a low temperature process. The p... Read More
Inventors: Hayakawa, Masahiko;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP) |
Method for fabricating semiconductor thin film
However, a method for crystallizing an amorphous silicon film by heat treatment in the prior art has the following problem. In the case where a thin film transistor is constituted which is used in a l... Read More
Inventors: Yamazaki, Shunpei; Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (JP) |
Semiconductor device having doped polycrystalline layer
The present invention has been made to eliminate the above-mentioned problems, and an object of the invention is to provide a process of lowering a temperature necessary for crystallization and reduci... Read More
Inventors: Miyanaga, Akiharu; Ohtani, Hisashi; Teramoto, Satoshi;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP) |
MEMS 
