Transversely injected multiple wavelength diode laser array formed by layer disordering
OF PREFERRED EMBODIMENTS FIG. 1 illustrates a semiconductor structure which is used to form the preferred embodiment of the present invention. The structure illustrated includes a number of semicondu... Read More
Inventors: Paoli, Thomas L.; Beernink, Kevin J.;, Assignee: Xerox Corporation (Stamford, CT) |
Photonic home area network fiber/power insertion apparatus
Having described the invention, what is claimed is: 1. A photonic distribution apparatus for a home area network having a plurality of subscribers, the apparatus comprising: an optical transmission me... Read More
Inventors: Tomich, John L.;, Assignee: |
Microcavity semiconductor laser
OF THE INVENTION Referring to FIG. 1, a microcavity semiconductor laser in accordance with one embodiment of the invention is illustrated schematically as including a first lower microdisk (micromemb... Read More
Inventors: Ho, Seng-Tiong; Chu, Daniel Yen; Zhang, Jian-Ping; Wu, Shengli;, Assignee: Northwestern University (Evanston, IL) |
Precision alignment of optoelectronic devices
The foregoing and other objects and advantages are achieved in accordance with the present invention through the provision of an optoelctronic module in which one or more optoelectronic devices are pr... Read More
Inventors: Beranek, Mark W.; Charles, George E.; Foley, Barbara M.; Lilienthal, II, Peter F.; Shahid, Muhammed A.;, Assignee: Lucent Technologies, Inc., (Murray Hill, NJ); Motorola, Inc., (Schaumburg, IL); The Boeing Company (Seattle, WA) |
Broad band optical fiber telecommunications network
The present invention offers further advantages over the prior art in that it allows use of less expensive transmission equipment at the subscriber end, where much of the network cost is located. More... Read More
Inventors: Ortel, William G.;, Assignee: NYNEX Science & Technology, Inc. (White Plains, NY) |
Solid-state laser oscillating device
OF THE PREFERRED EMBODIMENTS In view of the fact that the present invention is characterized by an arrangement of a plurality of laser crystals, FIG. 1 shows a principal structure of the laser oscill... Read More
Inventors: Karube, Norio; Iehisa, Nobuaki; Mitsui, Kenji;, Assignee: Fanuc Ltd. (Yamanashi, JP) |
Method of fabricating submicron FETs with low temperature group III-V material
The above problems and others are at least partially solved and the above purposes and others are realized in a method of fabricating submicron heterostructure field effect transistors by forming a bu... Read More
Inventors: Abrokwah, Jonathan K.; Droopad, Ravi; Overgaard, Corey D.; Bowers, Brian; LaMacchia, Michael P.; Bernhardt, Bruce A.;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Electronic component and method of manufacturing same
OF THE INVENTION For more complete understanding, the invention will be explained now in greater detail. To carry out the inventive, wet-chemical deposition process for the manufacture of conductive,... Read More
Inventors: Klee, Mareike K.; Brand, Hans-Wolfgang; Jungk, Hans-Otto;, Assignee: U.S. Philips Corporation (New York, NY) |
Silicon oxide insulator (SOI) semiconductor having selectively linked body
OF THE INVENTION". BRIEF DESCRIPTION OF DRAWINGS For a fuller understanding of the present invention, reference is made to the accompanying drawings in the following detailed description of the Best ... Read More
Inventors: Wollesen, Donald;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Wavelength stabilization of laser source using fiber Bragg grating feedback
The present invention provides for a laser source with an extremely stable output. The laser source has a laser diode which is connected to an output optical fiber. The laser diode has an output inten... Read More
Inventors: Pan, Jing-Jong;, Assignee: E-Tek Dynamics, Inc. (San Jose, CA) |
Anisotropy-based crystalline oxide-on-semiconductor material
This invention resides in a semiconductor structure and device including a thin film of crystalline oxide arranged upon a semiconductor-based substrate wherein the crystalline oxide includes unit cell... Read More
Inventors: McKee, Rodney Allen; Walker, Frederick Joseph;, Assignee: UT-Battelle, LLC (Oak Ridge, TN) |
Silicon-integrated thin-film structure for electro-optic applications
This invention resides in a crystalline structure involving a ferroelectric thin film disposed atop a semiconductor surface wherein the orientation of the crystals within the thin film advantageously ... Read More
Inventors: McKee, Rodney A.; Walker, Frederick Joseph;, Assignee: UT-Battelle, LLC (Oak Ridge, TN) |
Very thin film capacitor for dynamic random access memory (DRAM)
In view of the foregoing and other problems of the conventional methods and structures, an object of the present invention is to provide a very thin film capacitor for a dynamic random access memory (... Read More
Inventors: Newns, Dennis Merton;, Assignee: International Business Machines Corporation (Armonk, NY) |
Convex device with selectively doped channel
In accordance with the present invention, a transistor may be formed in a manner that reduces the effects of threshold voltage implants and punch-through breakdown voltage implants on the strength of ... Read More
Inventors: Krivokapic, Zoran;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Methods of forming SOI insulator layers and methods of forming transistor devices
The invention encompasses methods of forming SOI constructions having varying thicknesses within the silicon layer. The invention also encompasses methods of forming transistor devices from such SOI c... Read More
Inventors: Manning, H. Montgomery;, Assignee: Micron Technology, Inc. (Boise, ID) |
Method of growing high-quality crystalline silicon quantum wells for RTD structures
In accordance with the present invention, there is provided a method whereby high quality silicon quantum wells can be fabricated for RTDs and other applications. The method involves growth of lattice... Read More
Inventors: Wilk, Glen D.; Anthony, John M.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Detector driven bias circuit for power transistors
A known amplifier circuit 1 constituting prior art is disclosed in FIG. 1, and has a power transistor 2 operating in Class AB mode. The power transistor 2 is a BJT (bipolar junction transistor, or an... Read More
Inventors: Arentz, Bernard James;, Assignee: The Whitaker Corporation (Wilmington, DE) |
Apparatus and method for providing T1/E1 telecommunications trunks over IP networks
In view of the above background on techniques for transmitting T1/E1 telecommunications signals between central office switches, several related art examples will now be discussed with reference to F... Read More
Inventors: Cox, James; Gerlach, Jack; Mott, James; Pearson, Robert;, Assignee: Toledo Communications, Inc. (Austin, TX) |
Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device
It is therefore an object of the invention to provide a partially oxidized electrically conductive element in which the lateral extent of the oxidation is controlled. It is another object of the inven... Read More
Inventors: Jewell, Jack L.;, Assignee: Picolight Incorporated (Boulder, CO) |
Semiconductor devices
What is claimed is: 1. A semiconductor laser device comprising a light-emitting diode formed on a single-crystal substrate, wherein an optical waveguide structure is formed on the surface of said subs... Read More
Inventors: Tanaka, Toshiaki; Aoki, Shigeru;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Transceiver for bidirectional signal transmission over a monomodal optical fiber
An object of the present invention is to overcome the above drawbacks and shortcomings using single mode fibers. Accordingly, the present invention is directed to a circuit arrangement allowing the bi... Read More
Inventors: Chiaretti, Guido; Blandano, Francesco;, Assignee: Italtel Societa Italiana Telecomunicazioni S.p.A. (Milan, IT) |
Modular multifiber connector with phone-like plug and socket
The present invention provides a modular multifiber connector generally comprising a plug which is releasably mateable with a receptacle, the plug and receptacle each designed to receive the terminal ... Read More
Inventors: Bylander, James R.;, Assignee: Minnesota Mining and Manufacturing Company (St. Paul, MN) |
Optical fiber splice interconnection and usage method
FIGS. 1A-1E show perspective views of one embodiment of a fiber optic cable splice 10 in assembled form with supportive detail views shown in FIGS. 1A-1E to 3 inclusive. A housing 11 of generally tub... Read More
Inventors: Fan, Robert J.;, Assignee: LiteCom, Inc. (Canoga Park, CA) |
Rolling bearing
The present invention has been worked out in the light of the foregoing prior art problems. An object of the present invention is to provide a roll bearing which exhibits little drop of life even if t... Read More
Inventors: Matsumoto, Yoichi;, Assignee: NSK Ltd. (Tokyo, JP) |
GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
In order to achieve these objects, the present invention provides a GaInP epitaxial structure stacked upon a GaAs single-crystal substrate, comprising at least a buffer layer, a Ga.sub.Z In.sub.1-Z As... Read More
Inventors: Udagawa, Takashi; Kimura, Masahiro; Kasahara, Akira; Okano, Taichi;, Assignee: Showa Denko K.K. (Tokyo, JP) |
Closely-spaced VCSEL and photodetector for applications requiring their independent operation
It is therefore an objective of the present invention to provide a VCSEL device sufficiently close to a photodetector device to permit the use of commercially available multifiber ferrules having fibe... Read More
Inventors: Scott, Jeffrey W.; Wasserbauer, John;, Assignee: Cielo Communications, Inc. (Broomfield, CO) |
Method of operation of a glass melting furnace and a glass melting furnace for the practice of the method
Objects of the invention therefore are to provide a method of operation and a glass melting furnace for such a method, in which the advantages of the above-mentioned furnace are retained, in which, ho... Read More
Inventors: Sorg, Helmut; Pieper, Helmut;, Assignee: Beteiligungen Sorg GmbH Co. KG (Lohr am Main, DE) |
Increased lateral oxidation rate of aluminum indium arsenide
To minimize the limitations in the prior art described above, and to minimize other limitations that will become apparent upon reading and understanding the present specification, the present inventio... Read More
Inventors: Hall, Eric M.; Coldren, Larry A.;, Assignee: The Regents of the University of California (Oakland, CA) |
Semiconductor devices employing Ti-doped Group III-V epitaxial layer
The following description is divided into two parts, namely, a discription of the growth technique for the semi-insulating material and a description of exemplary devices employing a layer of the tit... Read More
Inventors: Dentai, Andrew G.; Joyner, Jr., Charles H.;, Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories (Murray Hill, NJ) |
Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
The semiconductor light emitting device shown in FIG. 1 may be used as a laser or as an edge-emitting LED. In either case, the device 10 includes an active region 12 in which the recombination of ele... Read More
Inventors: Johnston, Jr., Wilbur D.; Karlicek, Jr., Robert F.; Long, Judith A.; Wilt, Daniel P.;, Assignee: AT&T Bell Laboratories (Murray Hill, NJ) |
MEMS 
