Laser gas replenishment method
It is an therefore an object of the invention to provide an improved excimer or molecular laser system, wherein the gas mixture status may be precisely and periodically determined and smoothly adjuste... Read More
Inventors: Albrecht, Hans-Stephan; Vogler, Klaus Wolfgang; Schroeder, Thomas;, Assignee: Lambda Physik AG (Goettingen, DE) |
Semiconductor laser package and method of fabrication
The above problems and others are substantially solved and the above purposes and others are realized in a semiconductor laser package including a laser chip, composed of a vertical cavity surface emi... Read More
Inventors: Lebby, Michael S.; Jiang, Wenbin; Stafford, John W.;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Method for making closely-spaced VCSEL and photodetector on a substrate
It is therefore an objective of the present invention to provide a VCSEL device sufficiently close to a photodetector device to permit the use of commercially available multifiber ferrules having fibe... Read More
Inventors: Swirhun, Stanley E.; Scott, Jeffrey W.;, Assignee: Cielo Communications, Inc. (Broomfield, CO) |
Opto-electronic oscillators having optical resonators
An optical resonator of a high Q factor, when incorporated into an optical section of an opto-electronic oscillator as an energy storage element, can produce a number of effects in the oscillator. Fi... Read More
Inventors: Yao, Xiaotian Steve; Maleki, Lutfollah; Ilchenko, Vladimir;, Assignee: California Institute of Technology (Pasadena, CA) |
Semiconductor light emitting device having a protecting device
It is a primary object of the present invention to provide a semiconductor light emitting device which hardly suffers from damages even where a reverse voltage is applied, through A.C. driving, to bet... Read More
Inventors: Sonobe, Masayuki; Tsutsui, Tsuyoshi; Nakata, Shunji; Itoh, Norikazu; Isokawa, Shinji; Toda, Hidekazu;, Assignee: Rohm Co., Ltd. (Kyoto, JP) |
Bidirectional semiconductor light-emitting element and optical system
It is an object of the present invention to provide a bidirectional semiconductor light-emitting element capable of performing optical conversion for an AC electric signal by one device. In order to a... Read More
Inventors: Furuyama, Hideto;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
LED array chip
An object of the present invention is to provide an LED chip where the light emitting elements do not deteriorate and are densely aligned. Another object of the invention is to provide an LED chip whi... Read More
Inventors: Tohyama, Hiroshi; Ozawa, Susumu; Kasamura, Yuko; Yamada, Satoru;, Assignee: Oki Electric Industry Co., Ltd. (Tokyo, JP) |
Multi-wavelength laser light source
The present invention provides a multi-wavelength light source for a fiber optic network. The present invention uses a polarization beam splitter and nonlinear interferometers to provide multiple wav... Read More
Inventors: Cao, Simon X. F.;, Assignee: Avanex Corporation (Fremont, CA) |
Method of producing a semiconductor laser module
It is desirable to produce the semiconductor laser modules enjoying high Pf, low production cost and short production time. It is an object of the present invention to provide a semiconductor laser mo... Read More
Inventors: Yoshida, Kazunori; Nakanishi, Hiromi; Yamabayashi, Naoyuki;, Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP) |
Bidirectional optical semiconductor apparatus
An object of the present invention is reducing the overall size and improving the optical isolation of a bidirectional optical semiconductor apparatus, in which a substrate with an optical waveguide, ... Read More
Inventors: Mitsuda, Masahiro; Nishikawa, Tohru; Uno, Tomoaki;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Diffractive structure for high-dispersion WDM applications
The invention is directed to a grating structure for an optical multiplexer/demultiplexer which provides a substantially polarization-independent diffraction efficiency over a predetermined useful wav... Read More
Inventors: Hoose, John; Frankel, Robert; Popov, Evgeny;, Assignee: Chromaplex, Inc. (West Henrietta, NY) |
Process for manufacturing painted backlit displays having uniform backlighting intensity
It is an object of this invention to provide a method by which a group of non-flat molded plastic backlit components are produced with minimal variability in backlighting intensity. It is a further ob... Read More
Inventors: Fye, Michael E.; Dawson, William R.;, Assignee: Delco Electronics Corp. (Kokomo, IN) |
Fluorescent backlighting device for an instrument panel
It is an object of this invention to provide a backlighting system for a group of backlit components within a display panel, in which the backlighting system produces minimal variability in backlighti... Read More
Inventors: Roe, Pamela A.;, Assignee: Delco Electronics Corporation (Kokomo, IN) |
Method of balancing a display panel substrate
This invention is a method of balancing a display panel substrate for a backlit illuminated display, comprising: (a) providing a transparent display panel substrate having a front surface, a back surf... Read More
Inventors: Muggli, Dale A.; Wilkie, Daniel P.; Mills, Steven A.;, Assignee: IDD Aerospace Corp. (Redmond, WA) |
VVA mode LCD
Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a VVA mode LCD capable of stably... Read More
Inventors: Shin, Seong Wook; Choi, Sang Un; Hong, Seung Ho; Ma, Jung Ho;, Assignee: Boe Hydis Technology Co., Ltd. (Kyoungki-do, KR) |
Silicone alkoxylated esters carboxylates
What is claimed: 1. A silicone compound conforming to the following structure; ##STR12## wherein; Me is methyl; R and R' are selected from methyl and --(CH.sub.2).sub.3 --O--(EO).sub.a --(PO).sub.b --... Read More
Inventors: O'Lenick, Jr., Anthony J.; Parkinson, Jeff K.; Torbush, Robert T.;, Assignee: Siltech Inc. (Norcross, GA) |
Bis(silylpropyl)arenes and their preparation methods
OF THE INVENTION The bis(silylpropyl)arenes represented by the formula I, produced by the present invention can be classified into two groups. One of them is symmetric bis(silypropyl)arenes wherein R... Read More
Inventors: Jung, Il N.; Park, Sang K.; Lee, Bong W.; Suk, Mi-Yeon;, Assignee: Korea Institute of Science and Technology (Seoul, KR) |
Method of making CMOS structure with retarded electric field for minimum latch-up
What is claimed is: 1. A method of fabricating a CMOS structure which is substantially free of parasitic SCR action notwithstanding the presence of a vertical parasitic transistor formed by the source... Read More
Inventors: Yim, Ernest W.; VanLoon, Paul G. G.;, Assignee: Siliconix Corporation (Santa Clara, CA) |
Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
In accordance with the present invention, a method is described for eliminating the latch-up effect in integrated circuits having a parasitic pnpn structure comprising the steps of: irradiating the ci... Read More
Inventors: Rai-Choudhury, Prosenjit; Bartko, John;, Assignee: Westinghouse Electric Corp. (Pittsburgh, PA) |
Method of and apparatus for producing a package
In order to achieve the above mentioned objects the invention provides a method of producing a package, wherein a depression is formed in a shrinkable sheet material by deep drawing, the article to be... Read More
Inventors: Natterer, Johann;, Assignee: Multivac Sepp Haggenmuller KG (Wolfertschwenden, DE) |
Process for forming crystalline films by glow discharge
Crystalline silicon films are formed according to this invention by exposing an amorphous silicon film to a glow discharge in the presence of an inert gas such as argon. The amorphous silicon film is ... Read More
Inventors: Sato, Noritada; Seki, Yasukazu;, Assignee: Fuji Electric Co., Ltd. (Kawasaki, JP) |
Large value capacitor
OF THE INVENTION For purposes of illustrational simplicity and clarity, the figures contained herein are not geometrically proportioned. The dimensions given in the following detailed description of ... Read More
Inventors: Kendall, Don L.; Matzen, Walter T.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Method for fabricating a trench DRAM
FIG. 1 is a side view schematic diagram showing one embodiment of the present invention which is a DRAM cell. FIG. 2 is an electrical schematic diagram showing the electrical operation of components ... Read More
Inventors: Shen, Bing-Whey; McKee, Randy; Chung, Gishi;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Process for depositing highly doped polysilicon layer on stepped surface of semiconductor wafer resulting in enhanced step coverage
It is, therefore, an object of this invention to provide a process for depositing doped polysilicon over a stepped surface in a semiconductor wafer which will fill low segments between raised portions... Read More
Inventors: Beinglass, Israel;, Assignee: Applied Materials, Inc. (Santa Clara, CA) |
Sub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallization
It is therefore an object of the present invention to fill high aspect ratio trenches for sublayer contacts in a relatively low temperature process. It is another object of the invention to choose a t... Read More
Inventors: Beyer, Klaus; Fredericks, Edward C.; Hsu, Louis L.; Kotecki, David E.; Parks, Christopher C.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Method for producing an infrared detector
It is an object of the present invention to provide a method for producing an infrared detector having a high resolution and improved detection sensitivity Other objects and advantages of the present ... Read More
Inventors: Ohkura, Yuji; Takiguchi, Tohru;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Process for the production of a semiconductor component with at least two zones which form a pn-junction and possess differing conductivity types
The above disadvantages of the prior art are overcome in accordance with the present invention in that the zone produced by a doping process contains a region which has a disturbed lattice structure. ... Read More
Inventors: Graul, Juergen; Mueller, Helmut;, Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DE) |
Ultrasonic friction-fusion method and apparatus
The present invention relates to a novel and unique method of friction welding plastic strapping disposed under tension around a package by using a device moving at a very high frequency and low ampli... Read More
Inventors: Gurak, Ronald W.;, Assignee: Signode Corporation (Glenview, IL) |
Method and apparatus for alignment of submicron lithographic features
OF THE INVENTION The present invention relies on interferometry using a diffraction grating on a wafer, which, as shown in FIG. 1, comprises a grating 11 imposed on the surface of a semiconductor waf... Read More
Inventors: Brueck, Steven R. J.; Zaidi, Saleem H.;, Assignee: University of New Mexico (Albuquerque, NM) |
Methods and apparatus for lithography of sparse arrays of sub-micrometer features
Methods and apparatuses are disclosed for producing sparse arrays of sub-micrometer holes and/or mesas in a photosensitive material on a substrate, where sparse arrays refer to hole/mesa diameter to i... Read More
Inventors: Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.;, Assignee: University of New Mexico (Albuquerque, NM) |
MEMS 
