Methods for determining wavelength and pulse length of radiant energy used for annealing
The invented methods achieve the above-stated objects of the invention, and overcome the above-stated disadvantages of previous methods. Generally stated, the invented methods include a step of determ... Read More
Inventors: Markle, David A.; Talwar, Somit; Hawryluk, Andrew M.;, Assignee: Ultratech Stepper, Inc. (San Jose, CA) |
Micro-electromechanical actuator and methods of use and fabrication
The present invention is a micro-electromechanical actuator and related methods of use and fabrication that include a pair of electrodes separated by a linkage. The linkage is biased to a neutral posi... Read More
Inventors: Milligan, Donald J.;, Assignee: Hewlett-Packard Development Company, L.P. (Houston, TX) |
Sealed-cavity microstructure and microbolometer and associated fabrication methods
It is an object of the present invention to provide a sealed-cavity microstructure, and an associated fabrication method, which incorporates both a tight pressure seal and a rugged structural bond to ... Read More
Inventors: Hays, Kenneth Maxwell; Bisignano, Alan Glenn; Fitzgibbons, Eugene Timothy;, Assignee: Boeing North American, Inc. (Seal Beach, CA) |
Semiconductor component and method of producing it
It is accordingly an object of the invention to provide semiconductor components which overcome the above-mentioned disadvantages of the heretofore-known components of this general type and which have... Read More
Inventors: Kapels, Holger; Silber, Dieter; Plikat, Robert;, Assignee: Infineon Technologies AG (Munich, DE) |
Photo sensor
In order to solve the above-mentioned problems, this invention has the following structure. In the base surface of the phototransistor, there is provided an impurity layer having a higher concentratio... Read More
Inventors: Kuhara, Kentaro;, Assignee: Seiko Instruments Inc. (JP) |
Method of fabricating a polysilicon thin film transistor
The present invention includes a process for making a thin film transistor by both hydrogen passivating the thin film transistor and depositing a layer of an atomic hydrogen-containing substance. The ... Read More
Inventors: Tran, Nang T.; Keyes, Michael P.;, Assignee: Minnesota Mining and Manufacturing Company (St. Paul, MN) |
Method for reducing dark current effects in a charge couple device
What is claimed is: 1. A method for reducing dark current defects in a charge couple device which comprises: a) subjecting the charge couple device to an anneal in hydrogen at a temperature of about 8... Read More
Inventors: Ballantine, Arne W.; Dunbar, III, George A.; Hart, III, James V.; Johnson, Donna K.; MacDougall, Glenn C.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Liquid crystal display device
It is accordingly an object of the invention to provide a liquid crystal display device which overcomes the disadvantages of the prior art liquid crystal display devices without use of any SiN protect... Read More
Inventors: Ino, Masumitsu;, Assignee: Sony Corporation (Tokyo, JP) |
Planar optical waveguide, modulator, variable coupler and switch
OF THE INVENTION The GaAs channel-stop strip optical waveguide 10 of this invention is shown in a perspective view in FIG. 1. The waveguide 10 was formed by growing an n.sup.- epitaxial layer 2, by a... Read More
Inventors: Leonberger, Frederick J.; Donnelly, Joseph P.;, Assignee: Massachusetts Institute of Technology (Cambridge, MA) |
Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
This invention is an improved electroabsorption modulator of the type utilizing the Franz-Keldysh effect to modulate radiation. The modulator includes a semiconductor waveguide with a light-guiding re... Read More
Inventors: Haase, Michael A.; Misemer, David K.;, Assignee: Minnesota Minning and Manufacturing Company (St. Paul, MN) |
Transverse electric mode electro-optic cell for a modulator and process for producing such a cell
OF EMBODIMENTS For reasons of simplification, identical references are used for the corresponding parts of the different drawings described hereinafter. Moreover, the different parts of the drawings ... Read More
Inventors: Faderl, Ingo; Valette, Serge;, Assignee: Commissariat A l'Energie Atomique (Paris, FR) |
Method to reduce release time of micromachined devices
The present invention solves the above and other problems in the prior art by reducing the duration of the etch process without sacrificing the electromechanical properties of the structural layers in... Read More
Inventors: Muller, Lilac; Staple, Bevan;, Assignee: Network Photonics, Inc. (Boulder, CO) |
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
OF THE PRESENT INVENTION The present invention directs to an electronic device having a gate electrode layer that does not interact with the high-k dielectric layer and methods of forming the electro... Read More
Inventors: Arghavani, Reza; Chau, Robert; Doczy, Mark; Roberds, Brian;, Assignee: Intel Corporation (Santa Clara, CA) |
Column-row addressable electric microswitch arrays and sensor matrices employing them
OF THE INVENTION The detailed description of this invention includes the following sections: Brief description of the Drawings Description of the Preferred Embodiments BRIEF DESCRIPTION OF THE DRAWIN... Read More
Inventors: Yu, Gang; Cao, Yong;, Assignee: Uniax Corporation (Santa Barbara, CA) |
Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions
FIG. 1 illustrates a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) according to an embodiment of the invention. As illustrated in FIG. 1, the PFET 10 and NFET 12 ... Read More
Inventors: Chen, Huajie; Chidambarrao, Dureseti; Gluschenkov, Oleg G.; Steegen, An L.; Yang, Haining S.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Silicon membrane micro-scale
The present invention relates to scales, the capabilities of which include but is not limited to the sensing of weights in the micrograms to milligram range and the method to obtain the capacitive pro... Read More
Inventors: Holm-Kennedy, James W.; Umemoto, Donald K.;, Assignee: University of Hawaii (Honolulu, HI) |
Integratable capacitative pressure sensor and process for its manufacture
What is claimed is: 1. A process for manufacturing an integratable capacitative pressure sensor comprising the following steps, starting from a semiconductor substrate: insulating a semiconductor zone... Read More
Inventors: Zimmer, Gunther; Eichholz, Jorg; Mokwa, Wilfried; Kandler, Michael; Manoli, Yiannakis;, Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V. (Munich, DE) |
Arc suppression in waveguide using optical detector and forced air
Arcing can be especially problematic in certain end uses such as microwave ovens. For example, in industrial process type microwave ovens that are used in large scale cooking applications, continuous ... Read More
Inventors: Alton, William J.;, Assignee: The Ferrite Company, Inc. (Hudson, NH) |
Method of controlling dry etching by applying an AC voltage to the workpiece
I claim: 1. A dry etching method comprising the steps of: placing a workpiece on an electrode, said electrode being disposed in a processing chamber; introducing an etching gas into said processing ch... Read More
Inventors: Otsubo, Toru;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Etching process for producing substantially undercut free silicon on insulator structures
It is one object of the present invention to overcome the disadvantages of the known prior art. Specifically, one object is to develop a method for anisotropic reactive ion etching, wherein ion densit... Read More
Inventors: Donohue, John F.; Johnson, David J.; Devre, Michael W.;, Assignee: Plasma-Therm, Inc. (St. Petersburg, FL) |
Method for producing a suspended element in a micro-machined structure
What is claimed is: 1. Process for making at least one suspended element by using an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer calle... Read More
Inventors: Robert, Philippe; Michel, France; Grange, Hubert;, Assignee: Commissariat a l'Energie Atomique (Paris, FR) |
Microdevice and its production method
An object of the present invention is therefore to provide a micro device which has a beam-like structure that provides a sufficient degree of freedom in the design of the device structure by restrict... Read More
Inventors: Yoshida, Yukihisa; Chabloz, Martial; Jiao, Jiwei; Matsuura, Tsukasa; Tsutsumi, Kazuhiko;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Ferroelectric memory
In view of the above, a first object of the present invention is reducing the area of ferroelectric memory cells, and the second object is preventing the area of ferroelectric memory cells from increa... Read More
Inventors: Honda, Toshiyuki;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Package for a light-responsive semiconductor chip
The present invention was made in order to solve these problems and it is an object of the present invention to provide a semiconductor device in which the curvature of a chip surface is small, incide... Read More
Inventors: Hatta, Muneo;, Assignee: Mitsubishi Denki Kabushiki Kaisha (JP) |
Overmolded semiconductor package
OF THE INVENTION FIG. 1 shows a partially over-molded package 100, according to the present invention. A semiconductor die 130 is mounted to an upward-facing (as viewed in FIG. 1) surface 110a of a s... Read More
Inventors: Variot, Patrick; Chia, Chok J.;, Assignee: LSI Logic Corporation (Milpitas, CA) |
Method of modification and testing flip-chips
The present invention provides a method for accurately accessing the circuitry of a IC flip-chip while the chip remains mounted in its package. The present invention, therefore, permits a technician t... Read More
Inventors: Ghafghaichi, Majid; Campbell, A. Regina;, Assignee: Accurel Systems International Corporation (Sunnyvale, CA) |
Substrateless resin encapsulated semiconductor device
Accordingly, an object of the present invention is to provide a semiconductor device free from the above-discussed problems of the conventional semiconductor device. Another object of the present inve... Read More
Inventors: Baba, Shinji; Shibata, Jun; Ueda, Tetsuya;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Overcast semiconductor package
The present invention relates to a semiconductor device comprising a substrate having a top surface and a bottom surface. The top surface has at least two conductive connecting points in electrical co... Read More
Inventors: Chen, Shiaw-Jong Steve;, Assignee: Lucent Technologies, Inc. (Murray Hill, NJ) |
Semiconductor memory device mounted with a light emitting device
With referring to the drawings, a semiconductor memory device of the present invention will be explained hereinafter. FIG. 1 shows a schematic illustrative view of an EPROM package which is one embod... Read More
Inventors: Tanaka, Haruo; Shakuda, Yukio;, Assignee: Rohm Co. Ltd. (Kyoto, JP) |
Thermoplastic material for sealing a semiconductor element, semiconductor device sealed by the material, and the process for manufacturing the same
An object of the present invention is to provide a recyclable semiconductor device. This invention provides a reusable packaging material for semiconductor devices. The new package of semiconductor de... Read More
Inventors: Honda, Tomoko; Adachi, Masaki;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
MEMS 
