Light-emitting semiconductor
It is, therefore, an object of the present invention to provide a light-emitting semiconductor device for radiating incoherent light, which has a high light-emitting efficiency by the formation of a p... Read More
Inventors: Nishizawa, Jun-ichi;, Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai (Sendai, JP) |
Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
Accordingly, it is an object of this invention to provide an electrically-pumped interband cascade laser with inherently improved gain while simultaneously reducing the loss of quantum efficiency due ... Read More
Inventors: Meyer, Jerry; Vurgaftman, Igor; Yang, Ruan Q.;, Assignee: The United States of America as represented by the Secretary of the Navy () |
Light-emitting diode and light-emitting diode array
It is an object of the present invention to provide a light-emitting diode which can be arranged in high-density. In accordance with one aspect of the present invention, the foregoing objects, among o... Read More
Inventors: Ogihara, Mitsuhiko; Nakamura, Yukio; Taninaka, Masumi; Shimizu, Takatoku;, Assignee: Oki Data Corporation (Tokyo, JP) |
Light-emitting semiconductor device with reduced nonradiative recombination
An object of the present invention is to increase the efficiency of a light-emitting semiconductor device by reducing nonradiative recombination. A light-emitting semiconductor device according to a f... Read More
Inventors: Ogihara, Mitsuhiko; Hamano, Hiroshi; Taninaka, Masumi;, Assignee: Oki Data Communication (Tokyo, JP) |
Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices
What is claimed is: 1. An organic light emitting device comprising: a substrate; two contact electrodes, one thereof serving as an anode and the other one serving as a cathode; and an organic region i... Read More
Inventors: Riess, Walter; Strite, Samuel C.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Double layer beam expander for device-to-fiber coupling
The need remaining in the prior art is addressed by the present invention, which relates to a beam expander for providing coupling between a semiconductor optical device and associated optical fiber a... Read More
Inventors: Akulova, Yuliya Anatolyevna; Dautartas, Mindaugas Fernand; Focht, Marlin Wilbert; Glogovsky, Kenneth Gerard; Ougazzaden, Abdallah; Peticolas, Justin Larry;, Assignee: Agere Systems Optoelectronics Guardian Corp. (Orlando, FL) |
Circuit substrate shielding device
The invention has an object of providing a circuit substrate shielding device excelling in shielding effect without using any metallic cap. To accomplish the above object, the circuit substrate shield... Read More
Inventors: Saito, Yasuhito; Maekawa, Youko; Yoshioka, Shimpei;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Semiconductor device and method of manufacturing the same
An object of the present invention is to provide a further-miniaturized semiconductor device having a stacked package structure as well as a CSP structure. In order to achieve the above object, a semi... Read More
Inventors: Fukui, Yasuki; Sota, Yoshiki; Matsune, Yuji; Narai, Atsuya;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Flip-chip semiconductor package structure and process for fabricating the same
OF PREFERRED EMBODIMENTS A preferred embodiment of the flip-chip packaging technology of the invention is disclosed in full details in the following with reference to FIGS. 3A-3D and FIG. 4. Referrin... Read More
Inventors: Chiu, Shih-Kuang; Tsai, Ying-Chou;, Assignee: Siliconware Precision Industries Co., Ltd. (TW) |
Submount for vertical cavity surface emitting lasers and detectors
OF THE ILLUSTRATED EMBODIMENTS The principles of the present invention provide for new technique of mounting VCSEL and detector arrays using a submount. That technique is explained with reference to ... Read More
Inventors: Tatum, Jimmy A.; Guenter, James K.;, Assignee: Finisar Corporation (Sunnyvale, CA) |
Method for fabricating self-aligned polysilicon contacts on FET source/drain areas
It is the principle object of this invention to provide a self-aligned polysilicon source/drain contact on a N-channel and a P-channel FET having a lightly doped source/drain and low contact resistanc... Read More
Inventors: Chien, Sun-Chieh;, Assignee: United Microelectronics Corporation (Hsinchu, TW) |
Semiconductor fabrication having multi-level transistors and high density interconnect therebetween
The problems outlined above are in large part solved by the fabrication process of the present invention. That is, a method for forming doped polysilicon structures elevated above an integrated circui... Read More
Inventors: Gardner, Mark I.; Kadosh, Daniel;, Assignee: Advanced Micro Devices, Inc. () |
GaN related compound semiconductor and process for producing the same
In view of the problems described above, an object of the present invention is to realize a GaN related compound semiconductor light-emitting device which has light transmission properties and ohmic p... Read More
Inventors: Uemura, Toshiya; Shibata, Naoki; Noiri, Shizuyo; Murakami, Masanori; Koide, Yasuo; Ito, Jun;, Assignee: Toyoda Gosei Co., Ltd. (Aichi, JP) |
Ceramic matrices for electronic devices and process for forming same
OF AN EMBODIMENT Although, as pointed out above, there are a number of variations and modifications possible, a procedure preferred when producing a few rather large monolithic capacitors, is essenti... Read More
Inventors: Rutt, Truman C.; Stynes, James A.;, Assignee: Tam Ceramics Inc. (Niagara Falls, NY) |
Process of treating a nodic oxide film, printed wiring board and process of making the same
Accordingly, the object of the present invention is to avoid the above-mentioned drawbacks. One aspect of the present invention is directed to a process of treating an anodic oxide film, comprising th... Read More
Inventors: Murayama, Seizo; Isawa, Kazuo; Maejima, Masatsugu; Usuki, Takayoshi; Saruwatari, Kohichi;, Assignee: Fujikura Cable Works, Ltd. (Tokyo, JP) |
Metal-foil-clad composite ceramic board and process for the production thereof
OF THE INVENTION The metal-foil-clad ceramic board of the present invention preferably has a thickness accuracy of within .+-.20 .mu.m, and the metal foil thereof preferably has a 10-point average su... Read More
Inventors: Ohya, Kazuyuki; Sayama, Norio;, Assignee: Mitsubishi Gas Chemical Company, Inc. (Tokyo, JP) |
Photovoltaic element electrode structure thereof and process for producing the same
The present invention provides an electrode structure for a photovoltaic element in which the connection between the collecting electrodes and the lead-out electrode is made in a simpler connecting st... Read More
Inventors: Fujisaki, Tatsuo; Hasebe, Akio; Murakami, Tsutomu; Tsuzuki, Koji; Ichinose, Hirofumi; Takada, Takeshi; Takeyama, Yoshifumi; Shinkura, Satoshi;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Self bleaching photoelectrochemical-electrochromic device
OF THE PREFERRED EMBODIMENTS The present invention is a photoelectrochemical-electrochromic light modulating assembly, indicated generally at 10, providing a self-powered electrochromic device which ... Read More
Inventors: Bechinger, Clemens S.; Gregg, Brian A.;, Assignee: Midwest Research Institute (Kansas City, MO) |
Super-luminescent diode
OF PREFERRED EMBODIMENTS As shown in FIG. 1, a light-emitting device 1 comprises a body 2 having first and second opposed end faces 3 and 4, respectively, and sidewalls 6 extending therebetween. The ... Read More
Inventors: Alphonse, Gerard A.; Gilbert, Dean B.;, Assignee: General Electric Company (Schenectady, NY) |
High performance angled stripe superluminescent diode
It is therefore an object of the present invention to provide a super luminescent device having improved lateral confinement of the optical beam path which does not result in an increase of reflection... Read More
Inventors: Alphonse, Gerard A.; Palfrey, Stephen L.;, Assignee: RCA Inc. (Vaudreuil, CA) |
Pseudomorphic high electron mobility transistor power device
It is a first objective of the present invention to provide a pseudomorphic high electron mobility transistor (PHEMT) power device that is capable of operating with a single voltage supply, has excell... Read More
Inventors: Kim, Haecheon; Park, Min; Mun, Jae-kyoung; Hyoung, Chang-hee; Ji, Hong-gu; Ahn, Ho-kyun;, Assignee: Electronics and Telecommunications Research Institute (KR) |
Field emission type electron source
What is claimed is: 1. A field emission-type electron source comprising a substrate, an electroconductive layer formed on a surface of said substrate, a semiconductor layer formed on said electrocondu... Read More
Inventors: Komoda, Takuya; Honda, Yoshiaki; Aizawa, Koichi; Ichihara, Tsutomu; Watabe, Yoshifumi; Hatai, Takashi; Baba, Toru;, Assignee: Matsushita Electric Works, Ltd. (Osaka, JP) |
Minimizing degradation of SiC bipolar semiconductor devices
In a first aspect, the invention is a bipolar structure comprising a silicon carbide substrate, a voltage blocking region on the substrate, and respective p-type and n-type silicon carbide regions bou... Read More
Inventors: Sumakeris, Joseph J.; Singh, Ranbir; Paisley, Michael James; Mueller, Stephan Georg; Hobgood, Hudson M.; Carter, Jr., Calvin H.; Burk, Jr., Albert Augustus;, Assignee: Cree, Inc. (Durham, NC) |
Method of doping a semiconductor surface
The present invention is a method of doping a semiconductor surface on a substrate by first applying a doped coating material over the surface, and then driving dopants from the doped coating material... Read More
Inventors: Shibib, Muhammed Ayman;, Assignee: Lucent Technologies (Murray Hill, NJ) |
Method of controlling MOSFET threshold voltage with self-aligned channel stop
OF THE INVENTION Referring now to the Drawing, FIG. 1a depicts a semiconductor substrate 10, preferably silicon, here lightly doped with p-type atoms, about 10.sup.15 atoms/cm.sup.3, over which has b... Read More
Inventors: Henderson, Richard C.;, Assignee: Hughes Aircraft Company (Culver City, CA) |
Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
A method and apparatus to deposit a first ferromagnetic metal layer onto an underlying material and to deposit a protective sacrificial layer above the first ferromagnetic layer without exposing the f... Read More
Inventors: Sneh, Ofer;, Assignee: Genus, Inc. (Sunnyvale, CA) |
Gyroscopic devices
The present invention arises, in part, from appreciating that the forces can be transmitted in a manner which by-passes any such mechanical links. The invention arises also from appreciating that the ... Read More
Inventors: Burdess, James S.;, Assignee: British Technology Group Ltd. (London, GB2) |
Tuning fork type gyroscope
To solve the above problems, it is an object of the present invention to provide a gyroscope having improved torque electrodes by which distortion of a vibratory structure of the gyroscope can be effi... Read More
Inventors: Lee, Byung-leul; Cho, Young-ho; Song, Ci-moo;, Assignee: Samsung Electronics Co., Ltd. (Kyungki-Do, KR); Korea Advanced Institute of Science and Technology (Taejon, KR) |
Micromechanical accelerometer having a peripherally suspended proof mass
OF THE INVENTION A monolithic, micromechanical vibrating beam accelerometer with trimmable resonant frequency according to the present invention is fabricated from a single silicon substrate 12 emplo... Read More
Inventors: Greiff, Paul;, Assignee: The Charles Stark Draper Laboratory, Inc. (Cambridge, MA) |
Silicon-glass bonded wafers
We claim: 1. A method of fabricating a bonded wafer having a single crystal semiconductor layer and a glass substrate comprising the steps of: (a) providing a single crystal semiconductor wafer that i... Read More
Inventors: Young, William Ronald; Rivoli, Anthony L.;, Assignee: Harris Corporation (Melbourne, FL) |
MEMS 
