Microelectromechanical beam for allowing a plate to rotate in relation to a frame in a microelectromechanical device
It is therefore an object of the present invention to provide improved electromechanical devices and methods. It is another object of the present invention to provide an electromechanical rotating pla... Read More
Inventors: Dhuler, Vijayakumar R.; Koester, David A.; Walters, Mark D.; Markus, Karen W.;, Assignee: MCNC (Research Triangle Park, NC) |
Multi-element micro gyro
OF SPECIFIC EMBODIMENTS FIG. 1 is a simplified plan view of the linearly movable parts lying in the operating plane of the micro-gyro. An outer element 20 functions as the driving mass of the gyro. I... Read More
Inventors: Hsu, Ying W.;, Assignee: Microsensors, Inc. (Costa Mesa, CA) |
Vibrating type angular velocity sensor
The present invention has been made to solve the above-explained problems of the conventional angular velocity sensors, and therefore, has an object to improve a detection displacement sensitivity of ... Read More
Inventors: Tsugai, Masahiro; Konno, Nobuaki; Hirata, Yoshiaki;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Method for fabricating an organic light emitting diode
The invention provides a method for fabricating an organic light emitting diode. As embodied and broadly described herein, the invention provides a substrate and uses a mask to etch the substrate to p... Read More
Inventors: Peng, Kuang-Chung;, Assignee: Helix Technology Inc. (Hsinchu, TW) |
Solid-state image sensor, production method of the same, and digital camera
The present invention has been conceived in view of the above, and its first object is to provide a solid-state image sensor which can decrease even color shading, and/or a solid-state image sensor wi... Read More
Inventors: Suzuki, Satoshi; Ohkouchi, Naoki;, Assignee: Nikon Corporation (Tokyo, JP) |
Semiconductor device using MIS capacitor
Accordingly, it is an object of the present invention to eliminate the above-described problems in the prior art and to provide a semiconductor device using a MIS capacitor which is capable of elimina... Read More
Inventors: Yamada, Toshio; Kobayashi, Tohru; Nishizawa, Hirotaka; Itoh, Hiroyuki; Saitoh, Tatsuya;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Silicon resonant tunneling
The present invention provides silicon-based resonant tunneling diodes and transistors by use of perforated silicon dioxide tunneling barriers for epitaxial alignment of anode, cathode, and quantum we... Read More
Inventors: Seabaugh, Alan C.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Semiconductor thin film, method for manufacturing the same, and solar cell using the same
It is an object of the present invention to provide a semiconductor thin film comprising an n-type compound semiconductor layer that can form a favorable junction with a CIS film or a CIGS film, a met... Read More
Inventors: Hashimoto, Yasuhiro; Negami, Takayuki; Hayashi, Shigeo; Wada, Takahiro;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
Monolithic solar cells are produced which are able to capture a broader spectrum of sun light and convert and harness a greater amount of solar energy into electricity. Advantageously, the monolithic ... Read More
Inventors: Arya, Rajeewa R.;, Assignee: BP Solarex (Frederick, MD) |
SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
A system and method for bonding a glass wafer to a silicon wafer is provided that uses localized laser energy. In this method, a transparent cap wafer (e.g. glass or plastic) is transilluminated by a ... Read More
Inventors: Lutz, Markus;, Assignee: Robert Bosch GmbH (Stuttgart, DE) |
Method for etching photolithographically produced quartz crystal blanks for singulation
OF THE PREFERRED EMBODIMENT The present invention provides a method for etching photolithographically produced quartz crystal blanks and similar piezoelectric elements for singulation. As shown in FI... Read More
Inventors: Haas, Kevin; Witte, Robert; Kim, Sang;, Assignee: Motorola Inc. (Schaumburg, IL) |
Method of manufacturing an array substrate for use in a reflective liquid crystal display device
To overcome the problems described above, preferred embodiments of the present invention provide a reflective liquid crystal display device having a high brightness and a high manufacturing yield that... Read More
Inventors: Lim, Joo-Soo;, Assignee: LG. Philips LCD Co. Ltd. (Seoul, KR) |
Insulated gate bipolar transistor decreasing the gate resistance
One of the objects of the present invention is to provide an insulated gate transistor having an improved latch-up preventing performance by decreasing the resistance of the gate electrode. The featur... Read More
Inventors: Utsumi, Tomoyuki; Ozeki, Shoichi; Suda, Koichi;, Assignee: Hitachi, Ltd. (Tokyo, JP); Hitachi Haramachi Electronics Co., Ltd. (Ibaraki, JP) |
Semiconductor laser and method of manufacturing the same
OF PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIGS. 2 and 3 below. FIG. 2 is a sectional view perpendicular to a ridge stripe of a red semic... Read More
Inventors: Genei, Koichi; Okada, Makoto;, Assignee: Kabushiki Kaisha Toshiba (Tokyo, JP) |
Semiconductor integrated circuit device and method of manufacturing the same
However, the present inventors have discovered a problem in the protection circuit having a thyristor structure in that a difference in the ESD resistance tends to occur according to the polarity of a... Read More
Inventors: Ishizuka, Hiroyasu; Okuyama, Kousuke; Kubota, Katsuhiko;, Assignee: Hitachi, Ltd. (Tokyo, JP); Hitachi ULSI Systems Co., Ltd. (Tokyo, JP) |
Method for producing group III nitride compound semiconductor substrates using ZnO release layers
OF THE INVENTION The invention will be more fully understood by reference to the following example. EXAMPLE FIGS. 1 to 3 show a series of process producing for a gallium-nitrogen (GaN) compound semic... Read More
Inventors: Akasaki, Isamu; Amano, Hiroshi; Hiramatsu, Kazumasa; Detchprohm, Theeradetch;, Assignee: Toyoda Gosei Co., Ltd. (Nishikasugai-gun, JP); Isamu Akasaki (Nagoya, JP); Hiroshi Amano (Nagoya, JP); Kazumasa Hiramatsu (Yokkaichi, JP) |
Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers
It is therefore an object of the invention to provide a method for growing one or more high-quality single crystal III-V compound semiconductor layers of nitrides on an underlying single crystal III-V... Read More
Inventors: Kawai, Hiroji; Asatsuma, Tsunenori; Funato, Kenji;, Assignee: Sony Corporation (Tokyo, JP) |
Growth of GaN on a substrate using a ZnO buffer layer
It is hence an object of the invention to present, a semiconductor device made of homogenous gallium nitride crystal, and a manufacturing method capable of forming such semiconductor device at high re... Read More
Inventors: Yuri, Masaaki; Ueda, Tetsuzo; Baba, Takaaki;, Assignee: Matsushita Electronics Corporation (Osaka, JP) |
Method for making a vertical-cavity surface emitting laser with improved current confinement
Broadly, the present invention is a current confinement element that can be used in constructing light emitting devices. The current confinement element includes a top layer and an aperture-defining l... Read More
Inventors: Liao, Andrew Shuh-Huei; Hasnain, Ghulam; Kuo, Chihping; Kuo, Hao-Chung; Shi, Zhiqing; Trieu, Minh Ngoc;, Assignee: LuxNet Corporation (Fremont, CA) |
Methods for manufacture of multilayer circuit boards
We claim: 1. A process for the formation of a circuit board having two or more layers of circuitry, said process comprising the steps of applying a permanent dielectric coating over a substrate, said ... Read More
Inventors: Burnett, James M.; Mathisen, Richard J.;, Assignee: Foster Miller, Inc. (Waltham, MA) |
Method of making a polysilicon gate conductor of an integrated circuit formed as a sidewall spacer on a sacrificial material
The problems outlined above are in large part solved by an improved transistor configuration hereof. The transistor can be either a PMOS or NMOS transistor. The transistor is classified as one having ... Read More
Inventors: Fulford, Jr., H. Jim; Gardner, Mark I.; Wristers, Derick J.;, Assignee: Advanced Micro Devices, Inc. () |
Topside active optical device apparatus and method
While, to avoid the thermal problems of the prior art associated with the superstrate, one might consider adapting the prior art approach by an analogous approach of not using a superstrate and etchin... Read More
Inventors: Faska, Tom; Dudoff, Greg;, Assignee: Xanoptix, Inc. (Merrimack, NH) |
Method of etching semiconductor wafers
In order to accomplish the above-mentioned objects, the present invention provides the following technical constitution. That is, it provides a method of etching semiconductor wafers comprising: on th... Read More
Inventors: Sakai, Minekazu; Fukada, Tsuyoshi; Ohba, Nobukazu;, Assignee: Nippondenso Co., Ltd. (Kariya, JP) |
Stacked cell liquid crystal display device with connectors piercing though upper cells
The invention aims to remedy the disadvantages described above. It is an object of the invention to provide an inter-connector having high reliability and high productivity. Especially, it is an objec... Read More
Inventors: Akiyama, Masahiko; Nakai, Yutaka;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Transistor provided with first and second gate electrodes with channel region therebetween
It is an object of the present invention to provide a technique capable of improving the characteristic of a TFT and realizing a TFT of an optimum structure for the driving conditions of a pixel secti... Read More
Inventors: Tsunoda, Akira; Yamazaki, Shunpei; Koyama, Jun; Osada, Mai;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP) |
Semiconductor display devices and applications
It is an object of the present invention to provide techniques for circumventing the problem occurring when N- and P-channel TFTs are fabricated at the same time, i.e., increase in the number of masks... Read More
Inventors: Zhang, Hongyong;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP) |
Optimal write conductors layout for improved performance in MRAM
The above mentioned needs are met by the write conductor layout structure of the present invention. Misalignment between the write lines (i.e. a word line or a bit line) and the data storage layer is ... Read More
Inventors: Bhattacharyya, Manoj; Anthony, Thomas;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
It is an object of the present invention to provide a non-linear element (switch) between two metal conductors in an electric circuit that is fabricated directly onto one of the metal conductors. A fu... Read More
Inventors: Toet, Daniel; Sigmon, Thomas W.;, Assignee: The Regents of the University of California (Oakland, CA) |
Reticle and method of fabricating semiconductor device
Accordingly, an object of the present invention is to provide a reticle and a method of fabricating a semiconductor device that improve the alignment or stacking accuracy in the optical lithographic p... Read More
Inventors: Fujimoto, Masashi;, Assignee: NEC Electronics Corporation (Kawasaki, JP) |
III-nitride optoelectronic device
OF THE INVENTION The reactor and associated gas-distribution scheme used herein are substantially as described in U.S. Pat. No. 5,384,151. The system comprises a cooled quartz reaction tube pumped by... Read More
Inventors: Razeghi, Manijeh;, Assignee: MP Technologies, LLC (Wilmette, IL) |
MEMS 
