Structure for an optical switch on a substrate
FIG. 1 shows an embodiment of optical cross-connect system 100 in accordance with the invention. Two dimensional array 104 of MEMS tilt mirrors 106 is used to direct light beam 101 coming from two di... Read More
Inventors: Peeters, Eric; Rosa, Michel A.; Fork, David K.;, Assignee: Xerox Corporation (Stamford, CT) |
Micro-electro-mechanical-system (MEMS) mirror device and methods for fabricating the same
A micro-electro-mechanical-system (MEMS) mirror device is disclosed. The MEMS mirror device includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjace... Read More
Inventors: Bowers, John Edward; Helkey, Roger Jonathan; Corbalis, Charles; Sink, Robert Kehl; Lee, Seung Bok; MacDonald, Noel;, Assignee: Calient Networks, Inc. (San Jose, CA) |
Semiconductor device
Objects of the Invention It is an object of the present invention to provide a semiconductor device having an SOI structure and an insulated isolation region of a U-groove structure. It is an object o... Read More
Inventors: Tashiro, Tsutomu;, Assignee: NEC Corporation (Tokyo, JP) |
Method of manufacturing spatial light modulator and electronic device employing it
It is the object of the present invention to provide a spatial light modulator equipped with micromirrors which can be fabricated with a high yield, a method for manufacturing the same, and an electro... Read More
Inventors: Atobe, Mitsuro; Koeda, Hiroshi; Yotsuya, Shinichi;, Assignee: Seiko Epson Corporation (Tokyo, JP) |
Inductor with cobalt/nickel core for integrated circuit structure with high inductance and high Q-factor
In accordance with the invention, an integrated circuit structure is provided with an inductor formed therein which comprises a metal coil on an insulated surface over a semiconductor substrate, and a... Read More
Inventors: Qian, Linggian; Yeh, Wen-Chin Stanley;, Assignee: LSI Logic Corporation (Milpitas, CA) |
Distributed constant element using a magnetic thin film
As described above, the development and practicability of a magnetic thin-film device are delayed. It is desired that the device be improved rapidly in characteristics (performance), miniaturized (thi... Read More
Inventors: Mizoguchi, Tetsuhiko; Inoue, Tetsuo; Sato, Toshirou;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Charge coupled device package
OF THE PREFERRED EMBODIMENT FIG. 4 shows a printed circuit interconnection frame of the present invention. A number of printed conductors 20 are plated on an inslating substrate 10. Each plated condu... Read More
Inventors: Wu, Liang-Chung;, Assignee: Harvatek Corp. (Hsinchu, TR) |
Magnetic element, magnetic read head, magnetic storage device, magnetic memory device
It is therefore an object of the present invention to provide a new and improved magnetic element expected to offer high spin accumulation effect in comparison with double tunnel junction elements usi... Read More
Inventors: Inomata, Koichiro; Nakajima, Kentaro; Saito, Yoshiaki;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Method for modifying switching field characteristics of magnetic tunnel junctions
Reference is now made to FIG. 1, which illustrates an MRAM device 10 including a resistive cross point array 12 of SDT junctions 14. The SDT junctions 14 are arranged in rows and columns, with the ro... Read More
Inventors: Anthony, Thomas; Tran, Lung; Sharma, Manish;, Assignee: Hewlett-Packard Development Company, L.P. (Houston, TX) |
Buffered-layer memory cell
The present invention provides a CMR memory device structure that can be reliably programmed using a bipolar pulse programming process. Alternately, the device can be programmed using a uni-polar puls... Read More
Inventors: Hsu, Sheng Teng; Li, Tingkai; Zhang, Fengyan; Pan, Wei; Zhuang, Wei-Wei; Evans, David R.; Tajiri, Masayuki;, Assignee: Sharp Laboratories of America, Inc. (Camas, WA) |
Method of manufacturing a precision integrated resistor
What is claimed is: 1. An integrated circuit fabrication method, comprising the steps of: (a.) providing a substrate which includes at least one substantially monolithic body of semiconductor material... Read More
Inventors: Jimenez, Jean;, Assignee: SGS-Thomson Microelectronics, S.A. (Gentilly Cedex, FR) |
Polymer thick-film resistor printed on planar circuit board surface
According to the present invention, there is provided a method of manufacturing a printed circuit board with a polymer thick-film (PTF) resistor whose dimensions can be defined with improved precision... Read More
Inventors: Dunn, Gregory;, Assignee: Motorola, Inc. (Schaumburg, IL) |
Light active sheet and methods for making the same
The present invention is intended to overcome the drawbacks of the prior art. It is an object of the present invention to provide methods for manufacturing solid-state light active devices. It is anot... Read More
Inventors: Daniels, John James; Nelson, Gregory Victor;, Assignee: Articulated Technologies, LLC (Higganum, CT) |
Semiconductor device and a method of manufacturing the same
The invention claimed is: 1. A method of manufacturing a semiconductor device including a field effect transistor comprising the steps of: forming a gate electrode by way of a gate insulating film abo... Read More
Inventors: Mitsuda, Katsuhiro; Honda, Mitsuharu; Iizuka, Akira;, Assignee: Renesas Technology Corp. (Tokyo, JP) |
Solid state image sensor unit with wide dynamic range and high resolution
It is therefore an object of this invention to provide a solid state image sensor unit in which the plurality of scanning directions of image capture can be arbitrarily selected as a matter of course,... Read More
Inventors: Kawai, Shinichi; Nakashiba, Yasutaka;, Assignee: NEC Corporation (Tokyo, JP) |
Photosensitive device with low power consumption
Hence, it is a general object of the invention to provide a device of this type with low power requirements. Now, in order to implement these and still further objects of the invention, which will bec... Read More
Inventors: Delbruck, Tobias; Liu, Shih-Chii; Zahnd, Samual; Lichtsteiner, Patrick;, Assignee: Eidgenossische Technische Hochschule Zurich (Zurich, CH) Universitat Zurich (Zurich, CH) |
Optical operational amplifier
One aspect of the present invention is an electrical switch which has a first current producing sensor having a source current terminal and a sink current terminal. A first sensor input is operatively... Read More
Inventors: Chow, Alan Y; Chow, Vincent Y.;, Assignee: Chow; Alan Y (Wheaton, IL) |
Semiconductor light emitting device and optical disc apparatus using the same
The invention claimed is: 1. An optical disc apparatus at least recording or reproducing information on/from plural kinds of optical discs using a semiconductor light emitting device as a light source... Read More
Inventors: Abe, Hiroaki; Agatsuma, Shinichi; Hoshi, Nozomu; Suzuki, Youichi;, Assignee: Sony Corporation (Tokyo, JP) |
Self-aligned MRAM contact and method of fabrication
The present invention provides a method for forming self-aligned MRAM contacts for MRAM structures, such as magnetic layers of an MRAM stack, formed over various underlayers of an integrated circuit s... Read More
Inventors: Lee, Roger;, Assignee: Micron Technology, Inc. (Boise, ID) |
Method of making toroidal MRAM cells
Before proceeding with the detailed description, it is to be appreciated that the present invention is not limited to use or application with a specific type of magnetic memory. Thus, although the pr... Read More
Inventors: Sharma, Manish;, Assignee: Hewlett-Packard Development Company, L.P. (Houston, TX) |
Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
The following disclosure provides the construction of a microgyroscope that has a single crystal silicon cloverleaf-shaped resonator and integrated post attached to the leaves. The microgyroscope dev... Read More
Inventors: Kubena, Randall L.; Stratton, Frederic P.; Chang, David T.;, Assignee: HRL Laboratories, LLC (Malibu, CA) |
Making a semiconductor photodetector
An object of the present invention is to provide a photodetector, such as a PIN photodiode and an avalanche photodiode, having a GaInAs/InP or GaInAsP/InP system, with a low dark current. The present ... Read More
Inventors: Kagawa, Shuzo; Komeno, Junji;, Assignee: Fujitsu Limited (Kawasaki, JP) |
Solid state image sensor and method for fabricating the same
Accordingly, it is an object of the present invention to provide a solid state image sensor having an elevated sensitivity without influencing the driving characteristics of the transfer electrode, an... Read More
Inventors: Murakami, Ichiro; Nakashiba, Yasutaka;, Assignee: NEC Corporation (Tokyo, JP) |
Backside thinning of image array devices
OF THE INVENTION The context of the invention is illustrated in FIG. 1 where there is shown an example of an electron bombarded active pixel array component including a vacuum enclosure 3 which house... Read More
Inventors: Costello, Kenneth A; Fairbairn, Kevin P.; Brown, David W.; Chung, Yun; Gober, Patricia; Yin, Edward;, Assignee: Intevac, Inc. (Santa Clara, CA) |
CMOS imager with storage capacitor
The present invention provides a CMOS imager having a storage capacitor connected to the fight sensitive node to improve collected charge storage. The storage capacitor is formed in parallel with the ... Read More
Inventors: Rhodes, Howard E.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Thin film transistor device and method of manufacturing the same
The object of the present invention is to provide a thin film transistor device in which both the n-type TFT and the p-type TFT are turned off at a predetermined gate voltage (0V for example) and the ... Read More
Inventors: Kurosawa, Yoshio;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics
Accordingly, an essential object of the present invention is to provide an improved semiconductor laser device in which Fabry-Perot resonance mode is suppressed, while disappearance of a diffraction g... Read More
Inventors: Takiguchi, Haruhisa; Kaneiwa, Shinji; Matsui, Sadayoshi; Taneya, Mototaka;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
Optically controlled phased array system and method
It is an object of this invention to provide an improved optically controlled phased array antenna system and method which utilizes the advantages of fiber optic lengths both for signal transmission a... Read More
Inventors: Herczfeld, Peter R.;, Assignee: |
Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
OF THE PREFERRED EMBODIMENTS The basic multilayer structure for the integrated heterojunction optoelectronic device of the present invention is illustrated in FIG. 1. For purposes of illustration, th... Read More
Inventors: Shur, Michael; Simmons, John G.;, Assignee: Regents of the University of Minnesota (Minneapolis, MN) |
Spatial light modulator using charge coupled device with quantum wells
What is claimed is: 1. An electro-optical device for providing spatial modulation of an incoming electromagnetic wave signal comprising a charge-coupled device being formed in said device and having a... Read More
Inventors: Burke, Barry E.; Goodhue, Jr., William D.; Nichols, Kirby B.;, Assignee: Massachusetts Institute of Technology (Cambridge, MA) |
MEMS 
