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Cubic boron nitride preparation
| Details |
Inventors: Beale, Harry A.;
Assignee: Battelle Development Corporation (Columbus, OH)
Primary Examiner: Newsome; John H.
Assistant Examiner:
Attorney, Agent or Firm: Warburton; Kenneth R.
A deposit of cubic boron nitride is placed on a substrate by an activated reactive evaporation method. The method includes: supporting and heating a substrate in vacuum; evaporating metal vapors into a zone between the substrate and a metals alloy source, said source consisting essentially of at least 60 percent by weight to balance of boron with from 2 to 12 percent by weight of aluminum and at least 0.2 to 24 percent by weight of at least one of cobalt, nickel, manganese, or other aluminide forming element; introducing ammonia gas into the zone; and generating an electrical field in the zone for ionizing the metal vapors and gas atoms in the zone. In the method the substrate generally is heated to a temperature of at least 300.degree. C. with preferred substrate temperatures between about 500.degree. C. and 1100.degree. C., the ammonia gas pressure preferably is about 1.times.10.sup.-4 torr to 8.times.10.sup.-3 torr, and a plasma activation in the zone desirably may be provided by employing a deflection electrode maintained at a positive voltage potential and positioned between the substrate and the source of evaporating metal vapors. |
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DETAILED DESCRIPTION AND BEST MODE The invention provides for deposition of cubic boron nitride on a substrate through activated reactive evaporation by a method which includes: (a) supporting a substrate in a vacuum and heating the substrate; (b) evaporating metal vapors into a zone between the substrate and the metals alloy source from a metals alloy source consisting essentially of at least 60 percent by weight to balance of boron with from 2 to 12 percent by weight of aluminum and at least 0.
2 to 24 percent by weight of at least one of cobalt, nickel, manganese, or other aluminide forming element; (c) introducing ammonia gas into said zone; and (d) generating an electrical field in the zone for ionizing the metal vapors and gas atoms in the zone; whereby a deposit of cubic boron nitride is placed on the surface of the substrate.
To practice the invention's method one utilizes a vacuum chamber apparatus, such as illustrated in the aforementioned U.
S.
Pat.
No.
3,791,852.
Such an apparatus includes a vacuum chamber which may comprise a conventional cover or dome resting on a base with a sealing gasket at the lower rim of the cover.
A support and feed unit for a source metal rod may be mounted in the base.
The unit includes a mechanism for moving the metal rod upward at a conrtrolled rate.
Cooling coils may be mounted in the unit and supplied with cooling water from a cooling water source.
An electron gun is mounted in the unit and provides an electron beam along the path to the upper surface of the metal rod, with the electron gun being energized from a power supply.
A substrate on which the CBN is to be deposited, is supported in a frame on a rod projecting upward from the base.
The substrate is heated by an electric resistance heater supported on a bracket.
Energy for the heater is provided from a power supply via a cable.
The temperature of the substrate is maintained at a desired value by means of a thermocouple in contact with the upper surface of the substrate, with the thermocouple connected to a controller by a line, with the controller output signal regulating the power from the supply to the heater
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Manufacturing Materials 
