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Field-emitter-array-integrated-distributed-amplifiers

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Field emitter array integrated distributed amplifiers

Details

Inventors: Gray, Henry F.; Greene, Richard F.;
Assignee: The United States of America as represented by the Secretary of the Navy (Washington, DC)
Primary Examiner: Mullins; James B.
Assistant Examiner:
Attorney, Agent or Firm: McDonnell; Thomas E., Miles; Edward F.

Distributed amplifiers in integrated circuit form wherein dielectric matel and electrically conductive material combine to form field emitter cathodes, grids, and anodes in a module forming one or more amplifier cells embedded in a matrix of reactive impedances that form companion stripline-like transmission lines in a vacuum or sufficiently low pressure gas such that electrons remain unscattered during travel over trajectories from cathode to anode in a cell.

DETAILED DESCRIPTION An object of the invention is to provide one or more novel distributed amplifier modules.
Another object of the invention is to provide one or more novel distributed amplifier modules incorporating one or more field emitter cathodes Another object of the invention is to provide distributed amplifiers that incorporate field emitter cathode schemes.
An object of this invention is to provide ultra-high frequency, wide-bandwidth, integrated distributed amplifiers based on collections of field emitter cathodes which form field emitter arrays that assume various and sundry configurations within a generic format.
Another object of this invention is to provide amplifiers designed primarily for medium power amplification of microwaves, millimeter waves, and submillimeter waves, perhaps well above 1 terahertz (thz) (viz.
1-100 thz).
These amplifiers are operable over a range of frequencies from essentially zero gigahertz (DC) to above 1000 gigahertz (ghz) perhaps to 100 thz).
Another object of the invention is to provide integrated distributed amplifiers incorporating a field emitter cathode in a single or multiple cell-like amplifier.
One of the objects of the invention is to provide various forms of distributed amplifiers useful for ultra-high frequency, wide-bandwidth, device applications, with each such amplifier having one or more field emitter cathodes (arrayed in a random, pseudorandom, or ordered fashion) according to an underlying design principle that weds respective cathodes to amplifier cells and to transmission lines to form a modular distributed amplifier.
Another object of this invention is to provide amplifiers which operate at high efficiency by virtue of needing no thermionic heat power supplies, as in TWTs, and by virtue of avoiding all ohmic Power losses in the interaction region, as compared to solid state power amplifiers.
Another object of this invention is to provide power amplifiers which avoid the cathode heat-up and cathode reactivation delays well known in the arts of TWT satellite communication and microwave TWT decoy systems associated with domant storage

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