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Glazing provided with a low-emissivity multilayer stack
| Details |
Inventors: Schicht, Heinz; Schmidt, Uwe; Kaiser, Wilfried; Schindler, Herbert;
Assignee: Saint-Gobain Vitrage (Aubervillers Cedex, FR)
Primary Examiner: Jones; Deborah
Assistant Examiner: Piziali; Andrew T
Attorney, Agent or Firm: Pennie & Edmonds LLP
The invention is a transparent substrate provided with a multilayer stack having thermal properties, especially solar-control or low-emissivity properties. The stack comprises at least one silver-based functional layer surrounded by at least two coatings made of dielectric material, with the presence of thin metal layers between the functional layer and at least one of the coatings made of dielectric material. A preferred stack is D.sub.1 /ZnO/Ag/AlM/D.sub.2 /ZnM'O, with AlM representing an aluminum alloy, ZnM'O a mixed oxide of zinc and at least one other metal, with D.sub.1 and D.sub.2 being a layer or a superposition of layers comprising at least one layer made of a metal oxide, silicon nitride, metal nitride or made of a mixed silicon/metal nitride. |
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DETAILED DESCRIPTION OF THE INVENTION The invention is directed to a transparent substrate, especially a glass substrate, provided with a multilayer stack having thermal properties, especially solar-control or low-emissivity properties, which is especially capable of undergoing the above-mentioned heat treatments and which comprises at least one silver-based functional layer surrounded by two coatings made of dielectric material, with the presence of metal layers, preferably thin layers, between the functional layer and at least one of the two coatings. The stack of the invention is characterized by the following sequence: D. sub. 1 /ZnO/Ag/AlM/D. sub. 2 /ZnM'O wherein AlM is an aluminum alloy containing at least one of the following elements: Mg, Mn, Cu, Zn, Ni, Si; ZnM'O is a mixed oxide of zinc and at least one other metal, preferably having a spinel structure; D. sub. 1, D. sub. 2 or both are either a layer or a superposition of layers comprising at least one layer made of a metal oxide such as SnO. sub. 2, Bi. sub. 2 O. sub. 3, TiO. sub. 2, ZnO or made of silicon nitride or of a metal nitride such as Si. sub. 3 N. sub. 4 or AlN or made of a mixed silicon/metal nitride, such as SiAlN or SiZrN. The formulae AlM, ZnM'O, SiAlN and SiZrN make no assumptions about the stoichiometry of each of the elements and have been adopted for the sake of simplifying the text. It goes without saying that Al. sub. z M. sub. y, Zn. sub. x M'. sub. y O. sub. z, etc. , are also included where x, y, z, are integers. "Thin layers" as used herein, unless otherwise define should be understood to mean layers deposited in essentially metallic form and with a thickness substantially less than that of the silver layer, of the order of about 0. 5 nm to about 5 nm, which layers are capable of being partially oxidized/modified during the deposition or during a heat treatment after the deposition. These layers are often referred to by the term "sacrificial" layers when above the silver or "blocker" layers, when above and/or below the silver. Advantageously, D
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