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 Hot filament CVD of boron nitride films

Details
Inventors: Rye, Robert R.;
Assignee: The United States of America as represented by the United States (Washington, DC)
Primary Examiner: Beck; Shrive
Assistant Examiner: King; Roy V.
Attorney, Agent or Firm: Libman; George H.

Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.

DETAILED DESCRIPTION Therefore, it is an object of the present invention to provide a method for coating a boron nitride film on a substrate.
It is a further object of the present invention to provide a method for forming a boron nitride film on a substrate wherein the substrate is maintained at a low temperature.
It is another object of the present invention to provide a boron nitride coating having a very low amount of impurities.
It is still another object of the present invention to provide a method for forming a boron nitride coating which employs as a precursor a non-toxic liquid easily handled in vacuum such as borazine.
It is yet another object of the present invention to provide a method for coating a boron nitride film on a substrate wherein the thermal activation step at a hot filament is separated from the surface reaction and film growth steps at the substrate surface.
It is still a further object of the present invention to provide a low energy plating technique which results in the deposition of a very pure BN film on a substrate.
The foregoing objects and other are accomplished in accordance with the present invention, generally speaking, by providing a method for coating a substrate with a boron nitride film which includes providing a substrate and a hot filament in a gas chamber; and introducing borazine gas into the gas chamber so as to heat said borazine gas with said hot filament and deposit a boron nitride film on the substrate.
Further scope of the applicability of the present invention will become apparent from the detailed description and drawings provided below.
However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.



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