 Bilayer electrode on a n-type semiconductor |
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| Multicolor organic electroluminescent panel and process for production thereof |
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| Desiccant for electrical and electronic devices |
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| Hydrogen and moisture getter and absorber for sealed devices |
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| Aqua ammonia production by desorption |
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| Hexaboride electron emissive material |
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Image forming materials and image forming process
| Details |
Inventors: Nahara, Akira; Ono, Yoshihiro; Namiki, Tomizo; Harada, Shigeo; Mizobuchi, Yuzo; Ikeda, Tomoaki;
Assignee: Fuji Photo Film Co., Ltd. (Minami-ashigara, JP)
Primary Examiner: Louie, Jr.; Won H.
Assistant Examiner:
Attorney, Agent or Firm: Sughrue, Rothwell, Mion, Zinn and Macpeak
An image forming material comprising a support having thereon a layer composed of a Ge--S composition or a Ge--S--X composition wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, In, Se, Te, Fe, I, P and O which undergoes a structural change capable of being detected optically, electrically or chemically upon exposure imagewise to light wherein the Ge--S or Ge--S--X composition layer has a thickness of at least about 300A and contains therein at least one element selected from the group consisting of Ag, Cu and Pb in an amount of more than 2 atoms of Ag, Cu and/or Pb based on 100 atoms of the Ge--S composition or the Ge--S--X composition. |
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DETAILED DESCRIPTION OF THE INVENTION Examples of Ge--S compositions which can be used in the present invention are GeS, GeS.
sub.
2, Ge.
sub.
35 S.
sub.
65, GeS.
sub.
4, Ge.
sub.
15 S.
sub.
85, GeS.
sub.
16 and the like.
Examples of Ge--S--X compositions are Ge.
sub.
35 S.
sub.
60 Al.
sub.
5 (amorphous), Ge.
sub.
35 S.
sub.
60 P.
sub.
5 (amorphous), Ge.
sub.
35 S.
sub.
60 Si.
sub.
5 (amorphous), Ge.
sub.
35 S.
sub.
60 Mg.
sub.
5 (amorphous + crystalline), Ge.
sub.
35 S.
sub.
60 Ti.
sub.
5 (amorphous + GeS.
sub.
2 + TiS.
sub.
2), Ge.
sub.
35 S.
sub.
60 V.
sub.
5 (amorphous + Ge.
sub.
S.
sub.
2 + V.
sub.
2 S.
sub.
3), Ge.
sub.
35 S.
sub.
60 Mn.
sub.
5 (amorphous + Mn.
sub.
2 GeS.
sub.
4), Ge.
sub.
35 S.
sub.
60 Co.
sub.
5 (amorphous + GeS.
sub.
2), Ge.
sub.
35 S.
sub.
60 Ni.
sub.
5 (amorphous + GeS.
sub.
2), Ge.
sub.
35 S.
sub.
60 Ta.
sub.
5 (amorphous + TaS.
sub.
2), Ge.
sub.
35 S.
sub.
60 Mo.
sub.
5 (amorphous + MoS.
sub.
2), Ge.
sub.
35 S.
sub.
60 W.
sub.
5 (amorphous + WS.
sub.
2 crystalline), Ge.
sub.
35 S.
sub.
60 Sn.
sub.
5 (amorphous + .
beta.
-SnS.
sub.
2 or .
alpha.
-SnS.
sub.
2), Ge.
sub.
35 S.
sub.
60 Zn.
sub.
5 (amorphous + ZnS), Ge.
sub.
20 S.
sub.
80 O.
sub.
0.
2, Ge.
sub.
20 S.
sub.
80 O.
sub.
20, Ge.
sub.
36 S.
sub.
35 I.
sub.
9, Ge.
sub.
35 S.
sub.
60 Al.
sub.
15, Ge.
sub.
20 S.
sub.
75 Al.
sub.
5, Ge.
sub.
30 S.
sub.
60 P.
sub.
10, Ge.
sub.
20 S.
sub.
80 P.
sub.
1 O.
sub.
2, Ge.
sub.
20 S.
sub.
80 P.
sub.
10 O.
sub.
20, Ge.
sub.
10 S.
sub.
80 P.
sub.
10 Pd.
sub.
0.
5 and Ge.
sub.
10 S.
sub.
80 P.
sub.
10 Pd.
sub.
5.
In the above, Ge--S compositions are more preferred than Ge--S--X compositions.
The subscripts which show the ratios of the elements in the above described compositions each means the atomic ratio of the starting materials.
The sum of these subscripts sometimes exceeds 100 because of a lack of homogeniety.
Further, oxygen containing compositions are those prepared by melting the oxides.
The descriptions in parentheses qualitatively show the results obtained by X-ray analysis of the resulting compositions.
The compositions are not always an amorphous soild, a so-called chalcogen glass, and they may contain crystalline material.
In using such compositions, image forming materials of the present invention can be obtained too
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Manufacturing Materials 
