Carbon resistor and method for producing same |
| OF THE INVENTION The ceramic resistor of the instant invention, and the method for the production ... |
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Method of making silicon nitride base cutting tools -II |
| OF THE INVENTION An illustrative method mode for carrying out the inventive method of making ... |
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Aerator |
| It is, therefore, one of the principal objects of the present invention to provide an aerator which ... |
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Low thermal expansion modified cordierites |
| OF THE INVENTION Referring now to FIG. 1, there is seen a flow sheet showing the process for ... |
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Method of manufacturing low thermal expansion modified cordierite ceramics |
| Briefly, the present invention is directed to define a method of fabricating a germanium-cordierite ... |
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Method of protecting Si.sub.3 N.sub.4 ceramic alloy during heating |
| What is claimed is: 1. A method of protecting a Si.sub.3 N.sub.4 ceramic alloy article during ... |
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Automated process for solvent separation of organic/inorganic substance |
| It is the general object of the invention to provide an automated process and apparatus for the ... |
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Refractory binder |
| I claim: 1. A solution of an aluminium phosphate binder in a diluent the solution comprising ... |
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Method of manufacturing .beta.'SiAlON compounds
| Details |
Inventors: Demit, Joel;
Assignee: Ceraver (Paris, FR)
Primary Examiner: Meros; Edward J.
Assistant Examiner:
Attorney, Agent or Firm: Sughrue, Rothwell, Mion, Zinn and Macpeak
Method of manufacturing silicon nitrides with a general formula of Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, in which z is a number less than or equal to 2.8. Silicon nitride is made to react at a temperature higher than 1600.degree. C. and in the finely divided state on aluminium oxynitride, and in the presence of an agent which generates gaseous silicon monoxide. Application to the manufacture of hard materials of high resistance to oxidation and to creep at high temperature. |
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DETAILED DESCRIPTION What is claimed is: 1. Method of manufacturing . beta. ' SiAlON compounds corresponding to the general formula Si. sub. 6-z Al. sub. z O. sub. z N. sub. 8-z, in which z represents a number less than or equal to 2,8, wherein silicon nitride in a finely divided state is made to react at a temperature greater than 1600. degree. C. with aluminum oxynitride in a finely divided state, without load, in the presence of gaseous silicon monoxide. 2. Method according to claim 1, wherein the aluminium oxynitride is obtained by reaction of aluminium nitride with alumina at a temperature greater than 1600. degree. C. and in the finely divided state. 3. Method according to claim 2, wherein the aluminium nitride is crushed before the reaction to raise its Blaine specific surface area to at least 10,000 cm. sup. 2 /g and the alumina is crushed before the reaction to raise its Blaine specific surface area to at least 6000 cm. sup. 2 /g. 4. Method according to claim 1, wherein the gaseous silicon monoxide is generated by a solid agent selected from the group consisting of a mixture of silicon nitride and silica powders, a mixture of silicon nitride and of alumina powders, a compound of silicon nitride and an oxide, a compound of silicon nitride and of an oxide to which silicon metal has been added, and the solid product of silicon and oxygen having relative proportions corresponding to that of the silicon monoxide. 5. Method according to claim 4, wherein a mixture of silicon nitride and of silica powders is used to generate the gaseous silicon monoxide. 6. Method according to claim 1, characterized in that the finely divided state of the silicon nitride and of the aluminium oxynitride corresponds to a Blaine specific surface area at least equivalent to 8000 cm. sup. 2 /g. 7. Method to produce sintered . beta. ' SiAlON compounds which comprises sintering the product of claim 1 in powder form at a temperature of greater than 1600. degree. C. in the presence of nitrogen. 8. Method according to claim 7, wherein the
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