Method of producing an end surface light emission type semiconductor device

Details

Inventors: Goto, Katsuhiko; Takahashi, Shogo; Omura, Etsuji;
Assignee: Mitsubishi Denki Kabushiki Kaisha (JP)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: McAndrews; Kevin
Attorney, Agent or Firm: Leydig, Voit & Mayer

A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the lower cladding layer at a predetermined position of the wafer to produce an output end surface; a process of depositing photosensitive material in the groove; a process of producing a required number of lenses from the photosensitive material; and a process of dividing the wafer into a plurality of lens-appended end surface light emission type semiconductor devices.

DETAILED DESCRIPTION An object of the present invention is to provide an improved method of producing an end surface light emission type semiconductor device which has an improved fiber coupling efficiency and is superior in the mass producibility.
Other objects and advantages of the present invention will become apparent from the detailed description given hereinafter; it should be understood, however, that the detailed description and specific embodiment are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
According to the present invention, an output end surface is produced by forming a stripe groove in a wafer, and depositing photosensitive material in the groove that is processed by photolithography so as to produce a required number of lenses.
Thus, lenses of quite high precision can be produced, and further the light output from the end surface that broadens in the horizontal direction can be collected.

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