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Method of severing a semiconductor device
| Details |
Inventors: Nath, Prem; Singh, Avtar;
Assignee: Energy Conversion Devices, Inc. (Troy, MI)
Primary Examiner: Chaudhuri; Olik
Assistant Examiner:
Attorney, Agent or Firm: Siskind; Marvin S., Goldman; Richard M.
An improved method for severing a large area semiconductor device, including a substrate having a base electrode region thereupon, semiconductor body and top electrode into smaller area devices includes the steps of supporting the semiconductor device from the top electrode side thereof and applying a cutting force to the substrate side of the semiconductor device so as to cut the device without establishing short circuit contact between the substrate electrode and the top electrode thereof. Also included is a large area semiconductor device having a protective layer affixed to the top electrode surface thereof. The large area device is readily adapted for severing into smaller area photovoltaic devices by the method disclosed herein. |
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DETAILED DESCRIPTION What we claim is: 1.
A method of cutting a semiconductor device of the type comprising: a substrate having a base electrode region thereupon, a semiconductor body formed of p-i-n layers of thin film semiconductor alloy material; said body disposed upon the base electrode and a transparent, electrically conductive top electrode formed of a relatively brittle transparent conductive oxide material deposited atop the semiconductor body, the method including the steps of: providing means for supporting the top electrode side of the semiconductor device; disposing shearing means proximate the substrate side of said semiconductor device; activating said shearing means, without first removing the portion of the top electrode and semiconductor body along which the device is to be cut, so as to apply a shearing force to the semiconductor device from the substrate side thereof; whereby the transparent conductive oxide material shatters in the region proximate to where the shearing force is applied and said shearing force cuts serially through the substrate, the semiconductor body and the top electrode without extablishing short circuit contact between the base electrode and the top electrode.
2.
A method as in claim 1, including the further step of disposing a protective member between the top electrode side of the semiconductor device and the support means.
3.
A method as in claim 2, wherein the step of providing a protective member comprises providing a sheet of material chosen from the group consisting of: cardboard, paper, synthetic polymeric materials, and combinations thereof.
4.
A method as in claim 2, wherein the step of providing a protective member includes the further step of removably affixing said protective member to the top electrode surface of the semiconductor device.
5.
A method as in claim 1, wherein the step of providing support means includes providing means adapted to both support the semiconductor device and protect the top electrode side thereof.
6.
A method as in claim 1, wherein the step of providing supporting means comprises providing a resilient member disposed to support substantially the entirety of the semiconductor device; and the step of activating the shearing means includes the further step of cutting through the device and into at least a portion of the resilient member
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