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Home Manufacturing Materials Mounting-for-solar-cell

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Details
Inventors: Klein, Norman S.;
Assignee: RCA Corporation (New York, NY)
Primary Examiner: Weisstuch, Aaron
Assistant Examiner:
Attorney, Agent or Firm: Cohen; Samuel, Squire; William

A mounting for a silicon solar cell comprises a layer of molybdenum on the back surface of the cell and a molybdenum wire along the peripheral edge of the radiation receiving surface of the cell. An electrode formed with an aperture aligned with the radiation receiving surface abuts and is secured along the border of the aperture to the wire and a heat sink is in conductive contact with the molybdenum layer. The coefficients of expansion of the molybdenum and silicon are similar and this protects the relatively brittle cell from damage when its temperature is changed.

DETAILED DESCRIPTION What is claimed is: 1.
A solar cell construction comprising: a wafer of semiconductor photosensitive material including a base region of one conductivity type and an emitter region of opposite conductivity type, said wafer having a coefficient of thermal expansion of a first value, an electrode grid structure in electrical contact with said emitter region for conducting charge carriers from said emitter region to an edge of said wafer, a first electrically conductive electrode in ohmic and thermal conductive contact with said base region over an area of about the same extent as said base region and having a coefficient of thermal expansion close in value to said first value, a second electrically conductive electrode in ohmic and thermal conductive contact with said grid structure at said edge of said wafer and having a coefficient of thermal expansion close in value to said first value, an electrical conductor in ohmic and thermal conductive contact with said second electrode and having a coefficient of thermal expansion substantially different than said first value, and a block of electrically conductive heat sink material in ohmic and thermal conductive contact with said first electrode over said area for cooling said wafer and said electrodes, said block having a coefficient of thermal expansion substantially different than said first value.
2.
The construction of claim 1 further including mounting means attached to said block.
3.
The construction of claim 1 wherein said first and second electrodes are the same refractory metals.
4.
The construction of claim 3 wherein said first electrode is a sheet of molybdenum and said second electrode is a molybdenum wire.
5.
The construction of claim 1 wherein said wafer, electrodes, conductor and block of material are joined by lead-tin solder.
6.
The construction of claim 1 wherein said wafer has a geometrically shaped periphery, said grid structure terminating at spaced locations along said periphery, said second electrode having said geometrical shape and extending along said periphery



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