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Process-for-production-of-high-hardness-boron-nitride-film

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Process for production of high-hardness boron nitride film

Details

Inventors: Satou, Mamoru; Yamaguchi, Kohichi;
Assignee: Kyocera Corporation (Kyoto, JP)
Primary Examiner: Newsome; John H.
Assistant Examiner:
Attorney, Agent or Firm: Spensley Horn Jubas & Lubitz

In a process for the production of a high-hardness boron nitride film by vacuum-depositing a boron component on a substrate from a boron-containing vacuum deposition source and simultaneously irradiating the substrate with an ion seed comprising at least nitrogen from an ion-generating source, if the atomic ratio (B/N) between boron and nitrogen supplied from the vacuum deposition source and the ion seed is adjusted within a range of from 4 to 25, the ion acceleration energy of the ion seed is adjusted to 5 to 100 KeV per atom of the ion seed and vacuum deposition and irradiation are carried out in an atmosphere of a nitrogen atom or nitrogen compound activated at an energy level lower than that of the ion seed, the hardness and quality of the film are highly improved. Furthermore, if a negative bias voltage is applied to the substrate at the vacuum deposition and irradiation with the seed ion, the film-forming speed can be increased and the hardness and quality of the film are further improved.

DETAILED DESCRIPTION Proceeding from the above-mentioned background, research was performed, and as a result, it was found that when vacuum deposition and ion irradiation are carried out on a substrate by using a boron-containing vacuum deposition source and an ion-generating source for generating an ion seed comprising at least nitrogen, then a film of high-hardness boron nitride composed mainly of CBN or WBN, which has a good quality, can be obtained.
The present invention is based on this finding.
It is therefore a primary object of the present invention to provide a novel process for the production of a high-hardness BN film.
Particularly, a high-quality film of high-hardness boron nitride composed mainly of CBN or WBN is formed on a substrate.
Another object of the present invention is to provide a process in which a high-quality film of high-hardness boron nitride composed mainly of CBN or WBN is formed on a substrate at a high film-forming speed.
Still another object of the present invention is to provide a process in which a high-quality boron nitride film is formed on a substrate at a high energy efficiency.
In accordance with one fundamental aspect of the present invention, there is provided a process for the production of a high-hardness boron nitride film.
This process comprises vacuum-depositing a boron component on a substrate from a boron-containing vacuum deposition source and simultaneously irradiating the substrate with an ion seed comprising at least nitrogen from an ion-generating source for generating said ion seed in order to therein form boron nitride on the substrate.
The atomic ratio (B/N) between boron and nitrogen supplied from the vacuum deposition source and the ion seed is adjusted within a range of from 4 to 25, the ion acceleration energy of the ion seed is adjusted to 5 to 100 KeV per atom of the ion seed, and vacuum deposition and irradiation are carried out in an atmosphere of a nitrogen atom or nitrogen compound activated at an energy level lower than that of the ion seed

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