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Process for the non-galvanic tin plating of copper or copper alloys
| Details |
Inventors: Bell, Jane; Heyer, Joachim; Hupe, Jurgen; Kalker, Ingo; Kleinfeld, Marlies;
Assignee: Enthone Inc. (West Haven, CT)
Primary Examiner: Klemanski; Helene
Assistant Examiner:
Attorney, Agent or Firm: Senniger Powers
The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is a created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the layer. |
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DETAILED DESCRIPTION What is claimed is: 1.
A bath for non-galvanic plating of a tin layer onto a copper or copper alloy base layer, the bath comprising: a tin-containing electrolyte; an acid; a complexing agent; a foreign metal which suppresses diffusion of a base layer material through the tin layer; and an antioxidant.
2.
The bath of claim 1 wherein the concentration of tin in the bath is 1 to 30 grams/liter.
3.
The bath of claim 1 wherein the tin-containing electrolyte comprises a bivalent tin salt.
4.
The bath of claim 1 wherein the bivalent tin salt comprises tin methanesulfonate.
5.
The bath of claim 1 wherein the bath has a pH of 0 to 3.
6.
The bath of claim 1 wherein the acid comprises methanesulfonic acid.
7.
The bath of claim 6 wherein the concentration of methanesulfonic acid in the bath is 5 to 200 grams/liter.
8.
The bath of claim 1 wherein the complexing agent comprises thiourea or a thiourea derivative.
9.
The bath of claim 8 wherein the concentration of thiourea or thiourea derivative is 10-200 grams/liter.
10.
The bath of claim 1 further comprising a wetting agent.
11.
The bath of claim 1 wherein the concentration of the wetting agent in the bath is 1 to 10 grams/liter.
12.
A bath for non-galvanic plating of a tin layer onto a copper or copper alloy base layer, the bath comprising: a tin-containing electrolyte, wherein the concentration of tin in the bath is 1 to 30 grams/liter; an acid; a complexing agent; and a foreign metal which suppresses diffusion of a base layer material through the tin layer, wherein the foreign metal is indium in a concentration of 1 to 500 milligrams/liter.
13.
A bath for non-galvanic plating of a diffusion-stable tin layer onto a copper or copper alloy base layer, the bath consisting essentially of thiourea, methanesulfonic acid, tin methanesulfonate, a wetting agent, and bismuth.
14.
The bath of claim 13 wherein the concentration, in the bath, of the thiourea is 100 grams/liter, of the methanesulfonic acid is 100 grams/liter, of tin is 5 grams/liter, of the wetting agent is 5 grams/liter, and of the bismuth is 30 milligrams/liter
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