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Transparent substrate provided with a thin-film stack with properties in the infrared
| Details |
Inventors: Schicht, Heinz; Haussler, Wulf; Schindler, Herbert; Ditzel, Gerhard; Schmidt, Uwe; Kaiser, Wilfried;
Assignee: Saint-Gobain Vitrage (Courbevoie, FR)
Primary Examiner: Thibodeau; Paul
Assistant Examiner: Rickman; Holly C.
Attorney, Agent or Firm: Pennie & Edmonds LLP
The invention relates to a transparent substrate, in particular glass substrate, provided with a thin-film stack including at least one metal film with properties in the infrared, in particular a low-emissivity one, arranged between two coatings which each include at least one anti-reflection film based on dielectric material, and at least one protective film based on a sacrificial metal or a partially or fully oxidized sacrificial metal or a sacrificial metal alloy placed between the said metal film and one of the said coatings. According to the invention, the film placed directly below and/or above the said metal film contains at least one of the noble metals Pd, Au, Ir, Pt and Rh. The low-level addition of one or more of these metals to the others, namely the film placed below and/or above the metal film, leads to an increase in the chemical stability and the hardness of the thin-film stack. |
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DETAILED DESCRIPTION OF THE INVENTION The invention is based on a fact which is known to those skilled in the art, according to which the essential properties of a thin-film stack containing a metal film with properties in the infrared are, amongst other things, determined by the structure and the constitution of this metal film, and that, for this, the structure and the constitution of this metal film, and also the composition and the constitution of the film below and/or above this metal film, are of fundamental importance.
It has been shown that the noble metals mentioned above exert a particularly favourable effect on the structure of the metal film with properties in the infrared which is then deposited, and more or less independently of the materials which form the film located below and/or above the metal film with properties in the infrared.
Surprisingly, this favourable effect is observed even if the noble metals mentioned above are present in a relatively low quantity, for example only 0.
05% by weight.
As regards the mode of action of these noble metals in these small quantities on the growth phenomenon of the metal film with properties in the infrared, there is no definitive explanation.
The favourable effect may, however, be due to the fact that a metallic seed of the noble metal is formed in and on a film containing a noble metal of this type, and that, because of the isomorphic nature of these noble metals in comparison with the metal of the metal film with properties in the infrared, the metal of the metal film with properties in the infrared is preferentially condensed on these metallic seeds during the sputtering and grows in a fashion which is particularly free of defects.
By virtue of its particularly regular structure which is formed, the metal film may be sputtered with a lower relative thickness, for equal thermal performance, which promotes increased transmission of light.
In particular, the surprising essential improvement in the mechanical hardness and the increase in the chemical stability of the stack seem to be related to the particularly defect-free structure of the metal film with properties in the infrared, which results from the structure according to the invention of the thin-film stack
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Manufacturing Materials 
