Apparatus for depositing material into high aspect ratio holes

DETAILED DESCRIPTION We claim: 1.
An apparatus for depositing a material onto a substrate in a vacuum chamber comprising: sputtering means for providing a sputtering source of the material; magnetic means for providing a multidipole magnetic field for magnetic confinement of plasma electrons; rf energy transmission means disposed in the vacuum chamber for inductively coupling rf electrical energy into the vacuum chamber directly for producing a plasma of sufficient density and volume in the vacuum chamber to cause ionization of sputtered atoms; and substrate placement means for placing the substrate in contract with said plasma.
2.
The apparatus for depositing a material onto a substrate in a vacuum chamber as defined in claim 1, further comprising biasing means for electrically biasing the substrate with DC or rf energy for controlling the energy and direction of ions impinging on the substrate.
3.
The apparatus for depositing a material onto a substrate in a vacuum chamber as defined in claim 1, wherein said sputtering means comprises: a first sputter target; a second sputter target disposed between said first sputter target and the substrate; and first and second sputter power source means for providing electrical energy to said first and second sputter targets respectively to cause sputtering thereof.
4.
The apparatus for depositing a material onto a substrate in a vacuum chamber as defined in claim 3, further comprising means for varying the power between said first sputter target and said second sputter target in order to adjust the uniformity of deposition over the surface of the substrate.
5.
An apparatus for depositing a material onto a substrate in a vacuum chamber as defined in claim 1, wherein said sputter means comprises: a first sputter target; a second cylindrical, hollow sputter target disposed between said first sputter target and the substrate; and first and second sputter power source means for providing electrical energy to said first and second sputter targets, respectively, to cause sputtering thereof