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 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor

Details
Inventors: Gill, Hardayal Singh;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: Renner; Craig A.
Assistant Examiner: Castro; Angel
Attorney, Agent or Firm: Gill; William D.

A disk drive system having a magnetic tunnel junction (MTJ) sensor having two MTJ stacks between first and second shields and a common electrode disposed between the two MTJ stacks. A first sense current is provided to the first MTJ stack by the first shield and the common electrode and a second sense current is provided to the second MTJ stack by the second shield and the common electrode. The magnetization directions of the pinned layers of the first and second MTJ stacks are fixed perpendicular to the ABS and antiparallel with respect to each other so that the magnetoresistive signal generated due to an external field from a disk by the first MTJ stack differs in phase by 180.degree. with respect to the magnetoresistive signal generated due to the same external field by the second MTJ stack. The voltages developed across the two MTJ stacks (voltages due to the presence of thermal asperities and voltages due to the presence of data fields) are applied to the inputs of a differential amplifier for substantial elimination of the thermal asperity signal.

DETAILED DESCRIPTION It is an object of the present invention to disclose a magnetic tunnel junction (MTJ) sensor for substantially eliminating the thermal asperity phenomena in disk drives utilizing MTJ sensors.
It is another object of the present invention to disclose a method and means for detecting and substantially eliminating the thermal asperity phenomena in disk drives utilizing MTJ sensors.
These and other objects and advantages are attained in accordance with the principles of the present invention by a magnetic tunnel junction (MTJ) sensor having a first MTJ stack separated from a second MTJ stack by a common electrode.
Electrodes for providing sense current to the first MTJ stack and to the second MTJ stack are provided by a first shield and a second shield, respectively.
The first MTJ stack has a free layer separated from a pinned layer by a tunnel barrier layer.
An AFM layer adjacent to the pinned layer provides an exchange field to fix (pin) the magnetization of the pinned layer perpendicular to the ABS.
The magnetization of the free layer is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
Similarly, the second MTJ stack has a free layer separated from a pinned layer by a tunnel barrier layer.
An AFM layer adjacent to the pinned layer provides an exchange field to fix (pin) the magnetization of the pinned layer perpendicular to the ABS and antiparallel to the magnetization direction of the pinned layer of the first MTJ stack.
The magnetization of the free layer is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
With the magnetizations of the pinned layers of the two MTJ stacks fixed perpendicular to the ABS and antiparallel with respect to each other, the magnetoresistive signal generated due to an external field from the disk by the first MTJ stack will differ in phase by 180.
degree.
with respect to the magnetoresistive signal generated due to the same external field by the second MTJ stack



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