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Home Metal Working Magnetron-sputtering-apparatus

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 Magnetron sputtering apparatus

Details
Inventors: Sugano, Yukiyasu;
Assignee: Sony Corporation (JP)
Primary Examiner: Nguyen; Nam
Assistant Examiner:
Attorney, Agent or Firm: Kananen; Ronald P.

A magnetron sputtering apparatus comprises: a wafer holder for holding a wafer thereon; a target holder for holding a target thereon, disposed opposite to the wafer holder; and a particle interceptor for intercepting some of particles ejected from the target, disposed between the wafer holder and the target holder. The diameter of the target is not less than that of the wafer and not greater than a value 1.4 times that of the wafer. Most particles fall on the surface of the wafer at small incidence angles and only few particles impinge and accumulate on the particle interceptor, so that particles deposit in a film of a uniform thickness over the surface of the wafer and are able to fall on the bottom surfaces of contact holes formed in the wafer. In a modification, the particle interceptor is moved in a plane parallel to the surface of the wafer to distribute particles uniformly over the surface of the wafer.

DETAILED DESCRIPTION It is an object of the present invention to provide a magnetron sputtering apparatus capable of efficiently using a target and of forming a film having high covering power in a highly uniform thickness.
A magnetron sputtering apparatus in one aspect of the present invention comprises a wafer holder for holding a wafer, and a particle interceptor disposed between the wafer holder and a target to intercept some of particles ejected from the target, wherein the diameter of the target is not smaller than that of the wafer and not greater than a value 1.
4 times that of the wafer.
A magnetron sputtering apparatus in another aspect of the present invention comprises a wafer holder for holding a wafer, and a particle interceptor disposed between the wafer holder and a target to intercept some of particles ejected from the target, wherein the particle interceptor is moved in parallel to the surface of a wafer held on the wafer holder by driving means so that the shade thereof formed by the orthogonal projection of the particle interceptor moves on the surface of the wafer.
When the diameter of the target is not smaller than that of the wafer and not greater than a value 1.
4 times that of the wafer, particles ejected from the target have at least a possibility of reaching the surface of the wafer and no particle has no possibility of reaching the surface of the wafer at all and has only a possibility of adhering to the particle interceptor.
Accordingly, the amount of particles that deposit on the particle interceptor is reduced and hence the particles are able to reach the surface of the wafer easily.
Since the particle interceptor is moved in parallel to the surface of the wafer so that the shade thereof formed on the surface of the wafer by the orthogonal projection thereof moves on the surface of the wafer, no region of the surface of the wafer is shaded always by the particle interceptor, so that the particles of the target are distributed uniformly over the surface of the wafer


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