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Method-and-apparatus-to-improve-the-properties-of-ion-beam-deposited-films-in-an-ion-beam-sputtering-system

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Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system

Details

Inventors: Pinarbasi, Mustafa;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: Diamond; Alan
Assistant Examiner:
Attorney, Agent or Firm: Gill; William D.

An ion beam sputtering system having a chamber, an ion beam source, a multiple targets, a shutter, and a substrate stage for securely holding a wafer substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.

DETAILED DESCRIPTION It is an object of the present invention to disclose an ion beam sputtering system having a substrate stage that can be made to tilt through a predefined angle.
It is a further object of the present invention to disclose an ion beam sputtering system having a substrate stage that can be made to tilt and form a non-normal angle with respect to its vertical axis, before or during the deposition process.
It is yet another object of the present invention to disclose an ion beam sputtering system having a substrate stage connected to a stage arm where the substrate stage can be made to tilt about the major axis (longitudinal axis) of the stage arm.
It is still another object of the present invention to disclose an ion beam sputtering system having a substrate stage connected to a stage arm where the substrate stage can tilt about the minor axis of the stage arm.
It is another object of the present invention to disclose an ion beam sputtering system having a substrate stage that can rotate while it is tilted.
It is a further object of the present invention to disclose an ion beam sputtering deposition process for building MR (AMR, GMR or SV) sensors with improved physical properties of each of the individual layers of the multilayer structures deposited on a wafer substrate.
It is yet another object of the present invention to disclose an ion beam sputtering system having a tiltable substrate stage and a movable flux regulator.
These and other objects of the present invention are accomplished by Applicant's invention of an ion beam sputter deposition system where a workpiece is securely placed on the top surface of the substrate stage during the ion beam sputtering deposition process.
The substrate stage can be made to tilt and form a non-normal angle with respect to its vertical axis such that the workpiece also forms a non-normal angle with respect to the incoming deposition atoms.
The substrate stage is further made to rotate about its vertical axis while it is also tilted with respect to its vertical axis

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