 Suppression of electrostatic interference from a transformer with a short ring |
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| Flat-pack battery separator |
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| Novel battery assembly |
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| Lead/acid battery having horizontal plates |
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Method of making read sensor with self-aligned low resistance leads
| Details |
Inventors: Hsiao, Richard;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: Young; Lee
Assistant Examiner: Tugbang; A. Dexter
Attorney, Agent or Firm: Gray Cary Ware & Friedenrich, Johnston; Ervin F.
A method makes a magnetic head at first, second, third, fourth and fifth regions on a substrate including forming a read sensor material layer in all regions, forming a first capping layer on the read sensor material layer in all regions, removing the first capping layer and the sensor material layer in all regions except the first, second and third regions wherein the first region is definable by a read sensor and the second and third regions abut opposite side edges of the first region, forming a low resistance material lead layer and a second capping layer in the fourth and fifth regions wherein the fourth and fifth regions abut the second and third regions respectively, selectively removing portions of the first capping layer in the second and third regions, selectively removing portions of the read sensor material layer in the second and third regions and portions of the second capping layer in the fourth and fifth regions and forming a high resistance material lead layer in the second, third, fourth and fifth regions. |
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DETAILED DESCRIPTION The present invention employs only two masking steps in the construction of the lead structure of the read head.
The third masking step, which is employed for constructing the low resistance lead portions, is eliminated by the present invention.
This is accomplished by employing protective capping layers that are deposited at various stages of the construction so that milling without a photoresist mask can be employed for constructing the low resistance lead portions.
The capping layers are different materials and the dry etching is of different types so that preferential etching can be performed.
Preferential etching means that during a selected etching step one or more of the capping layers is etched significantly slower than the other layers.
The capping layers are preferably selected from the group C, Al.
sub.
2 O.
sub.
3 and SiO.
sub.
2 and the etching is based from the group O.
sub.
2, Ar, fluorocarbon and chlorine containing gases.
As an example, an O.
sub.
2 based reactive etching will remove the C cap and leave a Ta cap essentially intact, an Ar based milling will remove the Ta cap and unwanted read sensor material, a fluorocarbon based etching will remove the Ta cap without essentially etching the C and Al.
sub.
2 O.
sub.
3 caps and the Ar based milling will remove the unwanted copper or gold without significantly etching the C and Al.
sub.
2 O.
sub.
3 caps.
By appropriately locating these capping layers and selecting appropriately based etching a lead structure with low overall resistance can be produced with less photomasking steps.
The present method lends itself to constructing a lead structure that has a lower resistance than prior art lead structures.
Each of the low resistance lead portions has a front edge that is coextensive with a back edge of the read sensor.
Each of first and second high resistance lead portions has a side edge that is contiguous with a side edge of the read sensor (self-aligned) and has a recessed portion that overlaps a respective low resistance portion
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Metal Working 
