No-field, low power FeMn deposition giving high exchange films

DETAILED DESCRIPTION The present invention provides numerous manufacturing advantages and is based upon the recognition that there is a method of producing a magnetoresistive read transducer with high exchange field stabilization which allows the layer of ferromagnetic material and the layer of antiferromagnetic material to be deposited non-sequentially and which requires lower anneal temperatures and shorter anneal times.
First, depositing the layers non-sequentially allows the layer of magnetoresistive ferromagnetic material to be deposited, patterned and etched by whatever methods, and under whatever conditions, are most favorable.
After patterning, etching and presputtering the layer of ferromagnetic material, the layer of antiferromagnetic material may be sputter deposited, with a low deposition power and in the absence of applied magnetic fields, onto the layer of ferromagnetic material.
Thickness uniformities of the antiferromagnetic material are improved by depositing it in the absence of an applied field.
Depositing at low power prevents the antiferromagnetic material from penetrating the layer of ferromagnetic material.
Finally, the layers of ferromagnetic and antiferromagnetic material may be annealed at lower temperatures and over shorter time periods than are required by prior art methods of producing magnetoresistive read transducers with exchange stabilization.
The magnetoresistive read transducer of the present invention exhibits very high exchange coupling, produced at a low anneal temperature in a single anneal cycle, without the use of interdiffusion materials.
The method of producing a magnetoresistive read transducer of the present invention includes depositing a layer of magnetoresistive ferromagnetic material.
The magnetoresistive ferromagnetic material is patterned and, etched.
Before the layer of antiferromagnetic material is sputter deposited onto the layer of ferromagnetic material, the ferromagnetic film is presputtered to remove surface oxide such that the layer of antiferromagnetic material is in direct contact with the layer of ferromagnetic material