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| Solenoid actuator with bleed screw |
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| Photoelectric single handle faucet |
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| Diaphragm stop for sensor-operated, battery-powered flush valve |
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| Automatic controlling valve for maintaining the rate of fluid flow at a constant value |
| The valve according to one embodiment of the present invention is an automatic constant-flow fluid ... |
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| Bi-directional flow control system |
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| Electrical plug connector lock |
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| Electric plug holder |
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Process of fabricating field-emission type electron source, electron source fabricated thereby and element structure of electron source
| Details |
Inventors: Yano, Seiki; Urayama, Masao; Takegawa, Yoshiyuki; Morita, Yuko;
Assignee: Sharp Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Ramsey; Kenneth J.
Assistant Examiner:
Attorney, Agent or Firm:
A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer. |
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DETAILED DESCRIPTION The present invention has been achieved to solve the above conventional problems, and it is therefore an object of the present invention to provide a process of fabricating a field-emission type electron source, an electron source fabricated by the process and an element structure of the electron source, whereby it is possible to prevent emitters from being oxidized and to simplify the process.
In accordance with one aspect of the invention, there is provided a process of fabricating a field-emission type electron source that emits electrons based on the principle of field-emission includes the steps of: forming an emitter emitting electrons on a substrate; and covering the emitter with a high vapor-pressure substance having a vapor pressure of 8.
times.
10.
sup.
-8 Torr or more at a temperature of 200.
degree.
C.
In accordance with another aspect of the invention, there is provided a field-emission type electron source, which emits electrons based on the principle of field-emission, fabricated by a process including the steps of: forming an emitter emitting electrons on a substrate; and covering the emitter with a high vapor-pressure substance having a vapor pressure of 8.
times.
10.
sup.
-8 Torr or more at a temperature of 200.
degree.
C.
In accordance with still another aspect of the invention, there is provided an element structure of a field-emission type electron source emitting electrons based on the principle of field-emission includes: a substrate; an emitter, emitting electrons, formed on the substrate; and a high vapor-pressure substance layer covering the emitter and having a vapor pressure of 8.
times.
10.
sup.
-8 Torr or more at a temperature of 200.
degree.
C.
In accordance with a process of fabricating a field-emission type electron source, an electron source produced thereby and an element structure of the electron source, it is possible to prevent the emitter from being oxidized even if the electron source is exposed to the air because the emitter surface is covered with a high vapor-pressure substance
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Metal Working 
