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Equipment security method and apparatus
In view of the foregoing, principal objects of the present invention comprise a novel method and apparatus including a base and cover member for releasably securing ...
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Computer component security device with parallel table securing means
The present invention is a computer component securing device, which has a main housing having a storage portion and a pair of table securing portions. a positioning ...
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Safety box
The object of the invention is to provide a safety box being structured in such a way that each form of burglary is made impossible. The invention, in particular, makes ...
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Fiber strand package having a size with low solvent content
OF THE PREFERRED EMBODIMENTS At least 60 weight % of the mixture of constituents which can be polymerized and/or crosslinked are preferably formed of constituents of ...
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Deadlocking mechanism
Having now described our invention, what we claim as new and desire to secure by Letters Patent is: 1. Deadlocking mechanism including; a tubular casing securable to a ...
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Master keyboard
OF THE DRAWINGS The foregoing and other objects of the invention will become more readily apparent by referring to the following detailed description and the appended ...
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High resistance photoconductor structure for multi-element infrared detector arrays
In accordance with the above requirements, the present invention, a high resistance thin film photoconductive detector structure is constructed comprising layers of p-...
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Process for forming a magnetoresistive sensor for a reading head
OF THE INVENTION With reference now to FIG. 1, the reading head 10, including the active element 12 that serves as the magnetic sensor, is shown positioned over a ...
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Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
OF THE INVENTION When growing InSb or GaAs by MOCVD or MBE, all ingredients and operating conditions are maintained very clean and purity is absolutely necessary. S...
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Method of making a single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization
OF THE PREFERRED EMBODIMENTS The ferroelectric memory (FEM) cell of the invention may be formed on a SOI (SIMOX) substrate, or, it may be formed in a bulk silicon ...
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