 Multi-driver integrated circuit |
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| Cylindrical alarm-functioned accessory device for intravenous infusion procedure |
| I claim: 1. A cylindrical alarm-functioned accessory device for intravenous infusion procedure ... |
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| Vehicle air and electrical connector |
| OF THE PREFERRED EMBODIMENT As best shown in FIG. 1 the coupling comprises a trailer cupped ... |
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| Packaged integrated circuit including heat slug having an exposed surface |
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| Connector device for computers |
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| Capacitor and element therefor |
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| Multiple input output electrical isolation for use with electronic integrated circuits |
| OF THE PREFERRED EMBODIMENT The present invention provides multiple isolation devices on a single ... |
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| On-chip pressure transducer and temperature compensation circuit therefor |
| OF THE INVENTION Pressure transducers typically are a piezoresistive pressure sensing element such ... |
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Semiconductor device with protective means against overheating
| Details |
Inventors: Tsuzuki, Yukio; Yamaoka, Masami;
Assignee: Nippondenso Co., Ltd. (Kariya, JP)
Primary Examiner: Edlow; Martin H.
Assistant Examiner: Featherstone; D.
Attorney, Agent or Firm: Cushman, Darby & Cushman
A semiconductor substrate has a power region and a control region. The control region is located in the center portion of the substrate, and the power region surrounds the control region and is separated therefrom. A vertical type, MOS transistor, i.e., an active semiconductor element, is formed on the power region. An insulation film is formed on part of the control region. A polycrystalline silicon diode, which functions as a heat-sensitive element, is formed on the insulation film. A control section comprising a lateral type, MOS transistor is also formed on the control region. The lateral type, MOS transistor is connected to receive a signal form the polycrystalline silicon diode. Further, a polycrystalline silicon resistor, which determines a circuit constant, is formed on the insulation film. The MOS transistor protects the active semiconductor element in response to a signal supplied from the heat-sensitive element showing that the temperature of the semiconductor substrate has risen above a predetermined value. For example, the active semiconductor element may be disabled until the detected temperature drops below a predetermined value. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a semiconductor device which has a circuit section and means which can effectively detect an excessive temperature rise of the active elements provided in the circuit section and can protect the circuit section from overheating due to an excessive temperature rise of the active elements.
Another object of the invention is to provide a semiconductor device comprising a heat-sensitive element for detecting an excessive temperature rise of the active elements.
The heat-sensitive element is electrically insulated from the active elements.
Due to this electrical insulation, the active elements and the heat-sensitive element can stably operate.
Another object of this invention is to provide a semiconductor device comprising a semiconductor substrate, a circuit section including active elements formed on the substrate, and a heat-detecting section including heat-sensitive elements formed on the semiconductor substrate for detecting a temperature rise of the substrate, wherein the circuit section can be reliably protected from overheating.
Still another object of the invention is to provide a semiconductor device comprising a semiconductor substrate and a heat-detecting section formed on the substrate and composed of PN junctions of polycrystalline silicon, whereby the device can withstand a high voltage and a stable temperature characteristic, and thus can be reliably protected from overheating.
According to the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a semiconductor circuit formed on the substrate and including active elements, an insulation film formed on at least one portion of the substrae, a heat-sensing element formed on the insulation film for measuring the temperature of that portion of the substrate, and a control section for controlling the semiconductor circuit in accordance with an output signal from the heat-sensitive element, thereby protecting the circuit from overheating
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Metal Working 
