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Void free, silicon filled trenches in semiconductors
| Details |
Inventors: Haupt, Moritz;
Assignee: Infineon Technologies AG (Munich, DE)
Primary Examiner: Chaudhari; Chandra
Assistant Examiner:
Attorney, Agent or Firm: Slater & Matsil, L.L.P.
The present invention provides methods of producing substantially void-free trench structures. After deposition of an a-Si or polysilicon layer in a trench formed in a semiconductor, the a-Si or polysilicon is exposed to hydrogen at an elevated temperature. |
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DETAILED DESCRIPTION One or more embodiments of the present invention provide methods of forming substantially void free trench structures in semiconductor devices.
In accordance with one embodiment of the present invention, a method of fabricating a semiconductor device is provided.
The method of this embodiment comprises forming a trench having sidewalls in a semiconductor substrate, depositing a layer of amorphous (a-Si) or polysilicon in the trench, and annealing the a-Si or polysilicon layer in a hydrogen atmosphere to collapse any voids in the trench.
Preferably, the annealing avoids recrystallization of a-Si or polysilicon in the sidewalls.
According to one or more embodiments, the trenches are high aspect ratio trenches, for examples trenches having an aspect ratio greater than about 20.
In preferred embodiments, the annealing is performed at a temperature elevated from the temperature at which deposition of the a-Si or polysilicon occurs.
For example, the annealing may be performed at a temperature greater than about 800.
degree.
C.
In preferred embodiments, the annealing is performed at a temperature between about 850.
degree.
C.
to 950.
degree.
C.
According to one aspect of the invention, the annealing is performed for a brief period of time, and for a time sufficient to avoid recrystallization of the a-Si or polysilicon.
Preferably, this is achieved by performing the annealing for less than about 5 minutes, and more preferably between about 10 seconds and 3 minutes.
According to one or more embodiments, the annealing is performed in an environment of flowing hydrogen.
The hydrogen is flowed at a rate of between about 2 SLPM and 15 SLPM.
The annealing can be performed in any suitable apparatus for processing of semiconductor devices.
Examples of suitable devices for performing the annealing include, but are not limited to, an epitaxy reactor and a rapid thermal annealing reactor.
The methods of the present invention can be used for a variety of semiconductor manufacturing techniques
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Metal Working 
