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Apparatus-for-performing-solution-growth-of-group-II-VI-compound-semiconductor-crystal

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Apparatus for performing solution growth of group II-VI compound semiconductor crystal

Details

Inventors: Nishizawa, Jun-ichi;
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai (Sendai, JP)
Primary Examiner: Doll; John
Assistant Examiner: Breneman; R. Bruce
Attorney, Agent or Firm: Cushman, Darby & Cushman

In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the temperature difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.

DETAILED DESCRIPTION It is, therefore, the object of the present invention to obviate the above-stated drawbacks of the prior art, and to provide an apparatus for performing a growth of a large single Group II-VI compound semiconductor crystal having good crystal perfection, with a satisfactory reproduceability.

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