Non-volatile register system utilizing thin-film floating-gate amorphous transistors

DETAILED DESCRIPTION One of the objects of the invention is to provide an improved register in which amorphous silicon thin-film floating-gate transistors are used to buffer or temporarily store data while the register is being operated and to non-volatilely store data in the event power is lost or turned off.
A further object of the invention is to provide an improved shift register in which amorphous silicon thin-film floating-gate transistors are used to buffer or temporarily store data as the data is shifted through the register and to non-volatilely store data in the event power is lost or turned off.
Another object of the invention is to provide an improved integrated circuit shift register in which amorphous silicon thin-film transistors are used throughout the register.
Briefly, in accordance with the invention, a register comprises a plurality of amorphous thin-film transistors configured in a plurality of register cells on which data is shifted between amorphous thin-film floating-gate transistors.
In the event power is cutoff or lost, the floating gate transistors non-volatilely store the data so that such data can be recovered or restored when power is subsequently turned on.