Home | Links | Contact Us | More About Intellectual Property | Bookmark
Search patents:
Home Nonmetallic Processes Electronic-coatings-using-filled-borosilazanes

 Process for producing nanoporous dielectric films at high pH
OF THE PREFERRED EMBODIMENT The invention forms a reaction product of at least one alkoxysilane ...


 Process for producing dielectric thin films
The invention provides a process for producing a cured dielectric film on a substrate which ...


 Particles and a process for preparing the same
What is claimed is: 1. A process for forming a plurality of particles, comprising the steps of: (A) ...


 Process to improve programming of memory cells
In some embodiments, a method comprises the steps of providing a semiconductor substrate having ...


 Organic electroluminescent device and encapsulation method
Generally, the present invention relates to organic electroluminescent devices and methods of ...


 Solid golf ball center with block butadiene-styrene polymers
What is claimed is: 1. A solid golf ball center having a substantially spherical form with high ...


 Golf ball
We claim: 1. In a solid type golf ball comprising a central core and an outer cover for the core, ...


 Solid golf balls
What is claimed is: 1. A solid golf ball comprising a rubber component selected from the group ...


 Thread-wound golf ball
OF THE INVENTION The thread-wound golf ball according to this invention comprises a ball core, a ...


 Rubber composition and golf ball comprising it
OF THE INVENTION As the rubber component of the composition of the invention, any of the various ...


 Electronic coatings using filled borosilazanes

Details
Inventors: Haluska, Loren A.; Michael, Keith W.;
Assignee: Dow Corning Corporation (Midland, MI)
Primary Examiner: Lusignan; Michael
Assistant Examiner:
Attorney, Agent or Firm: Gobrogge; Roger E.

The present invention relates to a method of forming coatings on electronic substrates and the substrates coated thereby. The method comprises applying a coating comprising a borosilazane and a filler on a substrate and heating the coated substrate at a temperature sufficient to convert the borosilazane to a ceramic coating.

DETAILED DESCRIPTION OF THE INVENTION The present invention is based on the discovery that desirable protective coatings can be formed on electronic substrates from compositions comprising borosilazanes and fillers.
Coatings derived therefrom are thicker (eg.
, >40 microns) than those derived from borosilazanes (eg.
, <2 microns), they can have a variety of electrical properties depending on the filler and they can be crack and pore-free.
Because of the above advantages, these coatings are particularly valuable on electronic substrates.
Such coatings could serve, for example, as passivation or dielectric coatings, interlevel dielectric layers, doped dielectric layers to produce transistor like devices, pigment loaded binder systems containing silicon to produce capacitor and capacitor like devices, multilayer devices, 3-D devices, silicon on insulator devices, coatings for superconductors, super lattice devices, conductive coatings, magnetic coatings, tamperproof coatings and the like.
As used in the present invention, the expression "ceramic coating" is used to describe the hard borosilicate containing coating obtained after heating the borosilazane--filler composition.
In addition to the filler, this coating contains Si-O and B-O bonds which may or may not be fully free of residual carbon, hydrogen, and/or nitrogen but which are otherwise ceramic in character; The expression "filler" is used to describe a finely divided solid phase which is distributed within the borosilazane and the final ceramic coating.
The expression "electronic substrate" is meant to include, but is not limited to, electronic devices or electronic circuits such as silicon based devices, gallium arsenide based devices, focal plane arrays, opto-electronic devices, photovoltaic cells and optical devices.
In the process of the present invention a ceramic coating is formed on a substrate by a process which comprises applying a coating composition comprising a borosilazane and a filler onto the substrate and then heating the coated substrate at a temperature sufficient to convert the borosilazane to a ceramic



Related patents
  Low density, high porosity material as gate dielectric for field emission device
What is claimed is: 1. A method of fabricating an electron emission apparatus comprising the steps of: forming a conductive mesh structure on an insulating substrate; ...
  Foamed polymer for use as dielectric material
OF THE INVENTION The present invention relates to a foamed polymer having a pore size less than about 1000 .ANG. made by the steps of: (a) forming a copolymer ...
  Gel-coated microcapsules
OF THE INVENTION The coated microcapsules of the invention feature microcapsules coated with a gel, specifically a gel produced by the sol-gel process. The gel coating ...
  Porous silicon dioxide insulator
Parasitic capacitance is reduced in a semiconductor integrated circuit (IC) by forming a porous silicon dioxide insulator between at least one interconnect and other ...
  Method for forming porous silicon dioxide insulators and related structures
Parasitic capacitance is reduced in a semiconductor integrated circuit (IC) by forming a porous silicon dioxide insulator between at least one interconnect and other ...
  Method for making surfactant-templated, high-porosity thin films
OF THE INVENTION The present invention provides a method to prepare high-porosity, mesophase structures and subsequent thin films with controlled pore structure and ...
  Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
The limitations of the prior art discussed above have, as of yet, not allowed the use of porous materials in semiconductor devices. Several of these limitations are ...
  Porous silicon oxycarbide integrated circuit insulator
The present invention provides, among other things, a low dielectric constant IC insulator formed of porous silicon oxycarbide. In one embodiment, the invention includes ...
  Method of forming porous film and material for porous film
In view of the aforementioned conventional problems, an object of the invention is providing a method, as simple as the conventional SOG process, of forming a porous ...
  Porous materials
OF THE INVENTION As used throughout this specification, the following abbreviations shall have the following meanings, unless the context clearly indicates otherwise: ....

0.014

Archive: All patents - Links

Copyright (c)2006 Eipa-patents.org - All rights reserved