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| Semiconductor object pre-aligning method |
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| Fusion seal and sealing mixtures |
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Etching agent for polyimide type resins and process for etching polyimide type resins with the same
| Details |
Inventors: Yamaoka, Shigenori; Isozaki, Kenmatsu; Nishi, Kyotaro; Okabe, Yukihiro; Waki, Mitsutaka; Mizuno, Masuo;
Assignee: Sumitomo Bakelite Co. Ltd. (JP)
Primary Examiner: Powell; William A.
Assistant Examiner:
Attorney, Agent or Firm: Flocks; Karl W., Neimark; Sheridan
Polyimide-type-resin-etching rate can remarkably be enhanced by combining tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide with at least one member selected from the group consisting of amide compounds represented by the following formula: ##STR1## and amide compounds represented by the following formula: ##STR2## and amine compounds represented by the following formula: H.sub.2 N--R.sub.6 --NH.sub.2 as an etching assistant. |
|
DETAILED DESCRIPTION What is claimed is: 1.
An etching agent for polyimide type resins consisting essentially of (1) tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide and (2) an etching assistant consisting of (a) at least one amine compound represented by the formula, H.
sub.
2 N--R.
sub.
6 --NH.
sub.
2 wherein R.
sub.
6 is an alkyl group having one or more carbon atoms and (b) at least one amide compound selected from the group consisting of compounds represented by the formulas: ##STR10## wherein R.
sub.
1 is a hydrogen atom or an alkyl group having one or more carbon atoms, and R.
sub.
2 and R.
sub.
3 are alkyl groups having one or more carbon atoms, and ##STR11## wherein R.
sub.
4 and R.
sub.
5 represent alkyl groups having one or more carbon atoms.
2.
An etching agent according to claim 1, wherein said tetramethylammonium hydroxide is [(CH.
sub.
3).
sub.
4 N].
sup.
+ OH.
sup.
-, C.
sub.
4 H.
sub.
13 NO.
5H.
sub.
2 O, C.
sub.
4 H.
sub.
13 NO.
3H.
sub.
2 O or C.
sub.
4 H.
sub.
13 NO.
H.
sub.
2 O.
3.
An etching agent according to claim 1 or 2, wherein said at least one amide compound is selected from the group consisting of N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone and N-ethyl-2-pyrrolidone.
4.
An etching agent according to claim 1 or 2, wherein said etching agent contains 0.
1-200 parts by weight of tetramethylammonium hydroxide per 100 parts by weight of the etching assistant.
5.
An etching agent according to claim 1 or 2, wherein said etching agent contains 0.
5-50 parts by weight of tetramethylammonium hydroxide and 20-1,000 parts by weight of water per 100 parts by weight of the etching assistant.
6.
An etching agent according to claim 1 or 2, wherein said at least one amine compound is selected from methylenediamine, ethylenediamine, trimethylenediamine, propylenediamine, tetramethylenediamine, hexamethylenediamine, pentamethylenediamine, and dimethylenediamine.
7.
An ething agent according to claim 1 or 2, wherein said at least one amide compound is selected from the compounds represented by the formula: ##STR12## wherein R
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Nonmetallic Processes 
