 Process for producing dielectric thin films |
| The invention provides a process for producing a cured dielectric film on a substrate which ... |
|
| Particles and a process for preparing the same |
| What is claimed is: 1. A process for forming a plurality of particles, comprising the steps of: (A) ... |
|
| Process to improve programming of memory cells |
| In some embodiments, a method comprises the steps of providing a semiconductor substrate having ... |
|
| Organic electroluminescent device and encapsulation method |
| Generally, the present invention relates to organic electroluminescent devices and methods of ... |
|
| Solid golf ball center with block butadiene-styrene polymers |
| What is claimed is: 1. A solid golf ball center having a substantially spherical form with high ... |
|
| Golf ball |
| We claim: 1. In a solid type golf ball comprising a central core and an outer cover for the core, ... |
|
| Solid golf balls |
| What is claimed is: 1. A solid golf ball comprising a rubber component selected from the group ... |
|
| Thread-wound golf ball |
| OF THE INVENTION The thread-wound golf ball according to this invention comprises a ball core, a ... |
|
| Rubber composition and golf ball comprising it |
| OF THE INVENTION As the rubber component of the composition of the invention, any of the various ... |
|
| Thread-wound golf ball |
| Therefore, an object of the present invention is to provide a thread-wound golf ball having a ... |
|
|
Low density, high porosity material as gate dielectric for field emission device
| Details |
Inventors: Gnade, Bruce; Cho, Chih-Chen; Levine, Jules D.;
Assignee: Texas Instruments Incorporated (Dallas, TX)
Primary Examiner: Bradley; P. Austin
Assistant Examiner: Knapp; Jeffrey T.
Attorney, Agent or Firm: Donaldson; Richard L., Keagy; Rose Alyssa
A porous dielectric material such as silica-based aerogel is used as the dielectric layer 48 between the gate and the cathode on the emitter plate 12 of a field emission device. Aerogel, which can have a relative dielectric constant as low as 1.03, is deposited over the resistive layer 44 of the emitter plate 12. Metal layer 49, functioning as the gate electrode, is subsequently deposited over the aerogel layer 48. The use of aerogel as a gate dielectric reduces power consumption. In a disclosed embodiment, aerogel layer 48 is comprised of sublayers 48a, 48b, and 48c of aerogels of differing densities, thereby providing better adhesion of the aerogel gate dielectric to both the resistive layer 44 and metal layer 49. Methods of fabricating the aerogel gate dielectric are disclosed. |
|
DETAILED DESCRIPTION What is claimed is: 1.
A method of fabricating an electron emission apparatus comprising the steps of: forming a conductive mesh structure on an insulating substrate; providing a resistive layer on said insulating substrate; forming an insulating layer over said resistive layer, said insulating layer comprising an aerogel; forming a conductive layer on said insulating layer; forming a plurality of apertures through said conductive layer and through said insulating layer; and forming a microtip emitter on said resistive layer within each of said apertures in said conductive layer.
2.
The method in accordance with claim 1 wherein the material of said insulating layer comprises a silica-based aerogel.
3.
The method in accordance with claim 1 wherein the material of said insulating layer has a relative dielectric constant of less than 3.
0.
4.
The method in accordance with claim 1 wherein said insulating layer comprises a plurality of sub-layers, wherein adjacent ones of said sub-layers differ in their relative densities.
5.
A method of fabricating an emitter plate for use in a field emission device, said method comprising the steps of: providing an insulating substrate; depositing a first conductive layer on a surface of said substrate; coating said first conductive layer with photoresist; applying a patterned mask over said photoresist and developing said photoresist to remove selected portions of said first conductive layer; removing any remaining photoresist; depositing a resistive layer on a surface of said substrate; depositing an insulating layer of a porous material over said resistive layer; depositing a second conductive layer over said insulating layer; forming apertures in said second conductive layer and through said insulating layer; and forming cone-shaped microtips within said apertures on said resistive layer; wherein said step of depositing an insulating layer of a porous material over said emitter plate comprises the step of depositing a layer of a silica-based aerogel having a relative dielectric constant of less than 3
|
| Related patents |
|
|
Foamed polymer for use as dielectric material
OF THE INVENTION The present invention relates to a foamed polymer having a pore size less than about 1000 .ANG. made by the steps of: (a) forming a copolymer ...
|
|
|
Gel-coated microcapsules
OF THE INVENTION The coated microcapsules of the invention feature microcapsules coated with a gel, specifically a gel produced by the sol-gel process. The gel coating ...
|
|
|
Porous silicon dioxide insulator
Parasitic capacitance is reduced in a semiconductor integrated circuit (IC) by forming a porous silicon dioxide insulator between at least one interconnect and other ...
|
|
|
Method for forming porous silicon dioxide insulators and related structures
Parasitic capacitance is reduced in a semiconductor integrated circuit (IC) by forming a porous silicon dioxide insulator between at least one interconnect and other ...
|
|
|
Method for making surfactant-templated, high-porosity thin films
OF THE INVENTION The present invention provides a method to prepare high-porosity, mesophase structures and subsequent thin films with controlled pore structure and ...
|
|
|
Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
The limitations of the prior art discussed above have, as of yet, not allowed the use of porous materials in semiconductor devices. Several of these limitations are ...
|
|
|
Porous silicon oxycarbide integrated circuit insulator
The present invention provides, among other things, a low dielectric constant IC insulator formed of porous silicon oxycarbide. In one embodiment, the invention includes ...
|
|
|
Method of forming porous film and material for porous film
In view of the aforementioned conventional problems, an object of the invention is providing a method, as simple as the conventional SOG process, of forming a porous ...
|
|
|
Porous materials
OF THE INVENTION As used throughout this specification, the following abbreviations shall have the following meanings, unless the context clearly indicates otherwise: ....
|
|
|
Process for producing nanoporous dielectric films at high pH
OF THE PREFERRED EMBODIMENT The invention forms a reaction product of at least one alkoxysilane with a relatively high volatility solvent composition, a relatively low ...
|
|
|
Nonmetallic Processes 
