Method for adjusting a semiconductor disk relative to a radiation mask in x-ray photolithography

DETAILED DESCRIPTION It is an object of the invention to disclose an adjusting process for utilization in x-ray photolithography, in which a thin-etching process of the semiconductor disks or the radiation masks is not necessary, and in which an adjustment precision of approximately 0.
1 .
mu.
m can be obtained.
This objective is inventively resolved in accordance with the characterizing portion of the main claim for a method disclosed in the preamble of this claim.
Preferred embodiments of the invention are disclosed in the subclaims.
An advantage of the inventive method is that in a silicon-semiconductor disk, conventionally possessing a thickness of approximately one-half millimeter (0.
5 .
mu.
mm) in the silicon-technology, said semiconductor disk absorbs x-rays very well.
The same holds true for the conventionally utilized carriers for the radiation mask which consist of quartz glass approximately one millimeter (1 mm) thick.
The holes in the mask and in the semiconductor disk therefore exhibit a considerably better contrast than can be obtained by other adjusting marks with simultaneous thin-etching of the carrier.
In meeting a required adjustment precision of approximately 0.
1 .
mu.
m--in accordance with one embodiment of the invention--the size of the holes is selected at approximately 10 .
mu.
m.
These holes are advantageously bored into the semiconductor disk or into the radiation mask with the aid of a high-power laser.
Of importance is the reciprocal position of these holes used as adjusting marks, which position must be maintained not only in all radiation mask which are required for the production of a circuit but also in all semiconductor disks on which these circuits are to be formed.
In accordance with another embodiment of the invention--before further processing--the components are provided with holes, used as adjusting marks, with the aid of a single apparatus, particularly with one or two high-power lasers in a fixed assembly receiving the semiconductor disks and also the substrates of the radiation masks