|
|
Plasma etching using a bilayer mask
The present invention provides for high resolution plasma etching of a primary layer on a semiconductor substrate and is particularly suitable for forming submicron ...
|
|
|
Method of cleaning a plurality of semiconductor devices
OF THE PREFERRED EMBODIMENT Referring now to FIG. 2, there is shown a perforation etch formed through the use of the hereinafter described method. Initially, a ...
|
|
|
Method of forming electrode pattern of semiconductor device
It is an object of the present invention to provide a method of forming an electrode pattern having a high bonding strength to a GaAs semiconductor substrate. It is ...
|
|
|
Rapid solidification processing of oxide superconductors
What is claimed is: 1. Method for processing a copper-containing superconducting oxide comprising: melting the oxide in an oxygen-rich environment; rapidly solidifying ...
|
|
|
Formation of superconducting articles by electrodeposition
What is claimed is: PG,18 1. A method for forming an oxide superconducting material on an article comprising the steps of: (a) preparing a mixture of coponents needed to ...
|
|
|
Method for manufacturing oxide superconducting films by laser evaporation
As an exemplified embodiment, a material of the composition Me1-Me2-Cu-O is selected, whereby Me1 is especially selected out of the group of rare earth metals, such as ...
|
|
|
Methods of forming a patterned metal film on a support
I have found that a pattern of metal can be applied to a substrate in a wholly additive process which pattern can be of high resolution and which does not result in ...
|
|
|
Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
Briefly, the invention is a process for passivating an integrated circuit. A layer of polyimide is applied to the surface of an integrated circuit followed by a layer of ...
|
|
|
Radiation-polymerizable mixture and copying material produced comprising polyurethane-polyurea polymer
OF PREFERRED EMBODIMENTS The polyurethanes used in the mixture according to the invention are saturated compounds, i.e. they do not contain any aliphatic C--C double ...
|
|
|
Image forming process with photopolymer layers between a support and a substrate
OF PREFERRED EMBODIMENTS In each layer of the photosensitive element, namely the layers shown as 3.sub.1, 3.sub.2 . . . 3.sub.n-1, and 3.sub.n in the FIGURE, the kind ...
|