Process for producing dielectric thin films

DETAILED DESCRIPTION The invention provides a process for producing a cured dielectric film on a substrate which comprises depositing a nanoporous silica dielectric precursor onto a substrate which precursor comprises at least one hydrolysed and condensed alkoxysilane composition, and then heating the substrate in a substantially oxygen free environment at a temperature of about 350.
degree.
C.
or greater, for a time period of at least about 5 seconds.
The invention further provides a process for curing a dielectric film on a substrate which comprises the step of treating a suitable substrate comprising a dielectric film, in a substantially oxygen free environment by heating the substrate to a temperature of about 350.
degree.
C.
or greater, for a time period of at least about 5 seconds.
The invention also provides a process for curing a nanoporous silica dielectric film on a substrate which comprises the step of treating a suitable substrate comprising a dried nanoporous silica film, in a substantially oxygen free environment by heating the substrate to a temperature of about 350.
degree.
C.
or greater, for a time period of at least about 5 seconds.
The invention also provides a process for curing a nanoporous silica dielectric film on a substrate which comprises the steps of (a) suspending a suitable substrate within a heating element, in a substantially oxygen free environment, wherein the substrate remains free of contact with the heating element, the substrate comprising a dried nanoporous silica film; (b) curing the dried nanoporous silica film sufficiently to remove outgassing remnants from the dried nanoporous silica film; then, (c) removing the cured, dried suitable substrate from the heating element.
The invention further provides a process for curing a nanoporous silica dielectric film on a substrate which comprises the steps of (a) suspending a suitable substrate within a sealable hotplate, wherein the substrate remains free of contact with the hotplate, wherein the substrate comprises a dried nanoporous silica film; (b) sealing the hotplate, wherein the suspended substrate is contained therein; (c) passing an amount of inert gas across the substrate effective to displace non-inert gases adjacent to the substrate; (d) heating the hotplate to a temperature of from about 350