Process to improve programming of memory cells

DETAILED DESCRIPTION In some embodiments, a method comprises the steps of providing a semiconductor substrate having regions isolated from each other by shallow trench isolation (STI) structures protruding above a surface of the substrate by a step height; forming a bottom antireflective coating (BARC) layer overlying the surface of the substrate and the STI structures; etching back a portion of the BARC layer overlying at least one of the STI structures, and partially etching back the at least one STI structure, to reduce the step height by which the STI structure protrudes above the surface of the substrate; and removing a remaining portion of the BARC layer between adjacent STI structures