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Resist process apparatus
| Details |
Inventors: Akimoto, Masami; Kimura, Yoshio; Hirakawa, Osamu; Anai, Noriyuki; Tateyama, Masanori; Sakamoto, Yasuhiro;
Assignee: Tokyo Electron Limited (Tokyo, JP); Tel Kyushu Limited (Kumamoto, JP)
Primary Examiner: Werner; Frank E.
Assistant Examiner: Underwood; Donald W.
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt
A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a handling device for a resist process apparatus, which can minimize changes in temperature of a wafer during wafer conveyance.
According to an aspect of the present invention, a resist process apparatus wherein semiconductor wafers are sequentially transported and processed by a plurality of process mechanisms on the basis of a program stored beforehand comprising, a wafer holding member for holding the semiconductor wafer, and conveying means for conveying the wafer holding member to the process mechanisms, the wafer holding member including a support frame being larger than diameter of the semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with a peripheral portion of the semiconductor wafer.
Tapered edges are preferably formed on portions of the support members which abut against a semiconductor wafer.
Since the abutment portions are shaped into the tapered edges, the contact area between the support members and the semiconductor wafer is minimized, and changes in temperature of the semiconductor wafer, when it is held, become small.
As a result, a uniform resist film can be formed on the entire surface of semiconductor wafer.
Each tapered edge is preferably inclined at 30.
degree.
to 60.
degree.
, more preferably, at 45.
degree.
with respect to a level.
In addition, it is preferable that each support member includes a rectangular bar having a tapered surface, and that a semiconductor wafer is brought into contact with the tapered surface.
This tapered surface is preferably inclined at 1.
degree.
to 20.
degree.
, more preferably, at 2.
degree.
with respect to a level.
Moreover, a guide tapered portion is preferably formed on each support member independently of the abutment support portion so as to guide a semiconductor wafer to the abutment support portion.
Each support member is preferably made of a material, which does not easily produced dust, and which has a small thermal conductivity, and is more preferably made of a fluoro resin or a ceramic such as silicon nitride or alumina
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Nonmetallic Processes 
