Branched alkoxyphenyl iodonium salt photoinitiators
OF THE INVENTION The C.sub.6 to C.sub.11 branched chain alkoxy monosubstituted aromatic iodonium salts of the present invention are preferably of the following formula: ##STR1## wherein: Ar.sup.1 and... Read More
Inventors: Kessel, Carl R.; Aeling, Ellen O.;, Assignee: Minnesota Mining and Manufacturing Company (St. Paul, MN) |
Blister resistant pressure sensitive adhesive sheet
OF THE INVENTION The present invention has been completed as a result of the extensive investigations undertaken with an object of providing a pressure sensitive adhesive sheet having excellent adhes... Read More
Inventors: Maruoka, Shigenobu; Sugizaki, Toshio; Irie, Kouji; Tsuchida, Ichiro; Saito, Takanori;, Assignee: Lintec Corporation (Tokyo, JP) |
Patterned pressure sensitive adhesive transfer tape
The invention provides a carrier web having recesses therein which contain pressure sensitive adhesive. In one aspect of the invention, the adhesive is transferable to an article from the recesses by ... Read More
Inventors: Calhoun, Clyde D.; Koskenmaki, David C.; Mazurek, Mieczyslaw H.;, Assignee: Minnesota Mining and Manufacturing Company (St. Paul, MN) |
Article and method for applying a temperature indicating composition
We have discovered that a completely different technique can usefully be employed to apply a temperature indicating composition to the surface of a heat-recoverable article. The technique uses a hot t... Read More
Inventors: Van Praet, Dirk J.;, Assignee: NV Raychem SA (Kessel-Lo, BE) |
Radiation-curable release coating compositions
OF THE INVENTION In one embodiment, the present invention is a radiation-curable release coating composition which comprises: (A) from about 60% to about 99% by weight of at least one polyfunctional ... Read More
Inventors: Curatolo, Benedict S.; Fox, Thomas J.;, Assignee: Avery Dennison Corporation (Pasadena, CA) |
Method and apparatus of etching a clean trench in a semiconductor material
From the foregoing, it may be appreciated that a need has arisen for a trench etching apparatus that provides a reasonably fast etch rate. A need has also arisen for an etching technique that can be p... Read More
Inventors: Barna, Gabriel G.; Frank, James G.; VanMeurs, Richard P.; Carter, Duane E.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Field effect device maintaining a high speed operation in a high voltage operation
OF PREFERRED EMBODIMENTS Now, a first preferred embodiment of the present invention will be described with reference to FIGS. 4, 5 and 6. A semi-insulating GaAs substrate 1 is used as a starting mate... Read More
Inventors: Itoh, Tomohiro;, Assignee: NEC Corporation (Tokyo, JP) |
Product and process for isolating RNA
The preferred practice of this invention is shown by the following examples. PREPARATION OF THE SOLVENT EXAMPLE 1 The most preferred embodiment of the solvent of this invention is made by combining 4... Read More
Inventors: Chomczynski, Piotr;, Assignee: |
Method of making heterojunction transistors with wide band-gap stop etch layer
Background The depletion mode high electron mobility transistor (HEMT) illustrated in FIG. 1 is a MESFET fabricated on a doped-AlGaAs/undoped GaAs heterostructure, which heterostructure is grown pref... Read More
Inventors: Berenz, John J.;, Assignee: TRW Inc. (Redondo Beach, CA) |
Power FETS with improved high voltage performance
This need and others are satisfied by the invention which is directed to power FETs which include an undoped layer covering and lattice matched to the n-channel of the FET between source and drain n+ ... Read More
Inventors: Sriram, Saptharishi;, Assignee: Westinghouse Electric Corp. (Pittsburgh, PA) |
High-frequency oscillator having a field-effect transistor with a stepwise increasing active layer carrier concentration
It is an object of the present invention to provide a high-frequency oscillator which produces less FM noise. In order to achieve the above object, a high-frequency oscillator according to the present... Read More
Inventors: Shiga, Nobuo;, Assignee: Sumitomo Electric Industries, Ltd. (JP) |
Heterojunction FET with a high potential barrier layer and gate structure
It is an object of the present invention to provide a high quality field effect compound semiconductor device. It is another object of the present invention to provide a field effect compound semicond... Read More
Inventors: Hasegawa, Yuuichi;, Assignee: Fujitsu Limited (Kawasaki, JP) |
Field-effect transistor having a double pulse-doped structure
The device according to this invention is the same as the above-described prior art MESFET presented by the inventors in that an intentionally-undoped intermediate layer is disposed between two pulse-... Read More
Inventors: Nakajima, Shigeru; Hayashi, Hideki;, Assignee: Sumitomo Electric Industries, Ltd. (JP) |
Limited current density field effect transistor with buried source and drain
The present invention is concerned with a metal-semiconductor field effect transistor (MESFET), for example, in which the source and drain electrodes are first in time of fabrication and are disposed ... Read More
Inventors: Calcatera, Mark C.; May, Dennis L.;, Assignee: The United States of America as represented by the Secretary of the Air (Washington, DC) |
Field effect transistor and method of manufacturing the same
The present invention has been made to solve the above-mentioned problems, and has as its object to provide an FET using a thin-film semiconductor layer having a high impurity concentration as a chann... Read More
Inventors: Matsuzaki, Ken-ichiro; Nakajima, Shigeru; Kuwata, Nobuhiro; Otobe, Kenji; Shiga, Nobuo; Yoshida, Ken-ichi;, Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP) |
Power MESFET structure and fabrication process with high breakdown voltage and enhanced source to drain current
OF THE PREFERRED EMBODIMENT FIG. 3 shows a cross-sectional view of one preferred embodiment of a power GaAs MESFET device 100 in accordance with the principles and the fabrication processes of the pr... Read More
Inventors: Tao, Kung-Chung;, Assignee: Industrial Technology Research Institute (Hsinchu, TW) |
Fluorescent X-ray film thickness gauge
It is, therefore, an object of the present invention to provide a fluorescent film thickness gauge which overcomes the aforementioned drawbacks and disadvantages of prior art gauges. Another object of... Read More
Inventors: Koga, Toshiyuki;, Assignee: Kabushiki Kaisha Daini Seikosha (Tokyo, JP) |
Fluorescent X-ray film thickness measuring apparatus
What is claimed: 1. A fluorescent X-ray film thickness measuring apparatus for measuring a film thickness of a sample, said film thickness measuring apparatus comprising: a collimator having an apertu... Read More
Inventors: Takahashi, Masanori;, Assignee: Seiko Instruments Inc. (Tokyo, JP) |
Bone densitometer with improved point characterization
The present invention improves the measurement of bone BMC or BMD in the AP direction by defining a measurement region of interest (ROI) about a vertebra that avoids areas of the vertebra that are sig... Read More
Inventors: Mazess, Richard B.;, Assignee: Lunar Corporation (Madison, WI) |
Method of formation of photographic images
OF THE INVENTION The photographic light-sensitive material for use in the present invention has a rapid developability such that 70% or more of the native character can be developed within one half o... Read More
Inventors: Yamada, Minoru; Arai, Naoki; Kagawa, Kazuo;, Assignee: Fuji Photo Film Co., Ltd. (Kanagawa, JP) |
Method of manufacturing semiconductor device
The present invention has been made in consideration of the above situation and has as its object to provide a method of manufacturing a semiconductor device, capable of forming a wiring layer or an i... Read More
Inventors: Suguro, Kyoichi; Okano, Haruo;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Method and apparatus for vacuum lamination of flex circuits
OF A PREFERRED EMBODIMENT Turning to FIG. 1 of the drawing, a laminate of printed wiring cables is illustrated and designated generally by the numeral 10. The cable consists of a plurality of layers ... Read More
Inventors: Reavill, Joseph A.; Arachi, John M.;, Assignee: General Dynamics Corporation, Pomona Division (Pomona, CA) |
Apparatus and method for temporarily sealing holes in printed circuit boards
OF THE INVENTION Turning now to the Figures, and specifically FIGS. 1A through 1E, there is shown in generalized form the steps employed in practicing the method of the present invention. A double-si... Read More
Inventors: Choinski, Edward J.;, Assignee: MultiTek Corporation (Wayland, MA) |
Printed circuit board laminating machine
This invention is directed to a method and apparatus for laminating dry films to printed circuit boards. The method and apparatus permits the dry film to be applied to the circuit board in a routine f... Read More
Inventors: Namysl, Edmond;, Assignee: |
Method of making diaphragm-type pressure transducers
It is among the objects of the present invention to provide a method of manufacturing diaphragm-type pressure transducers that is faster and less labor intensive; to provide such a method that allows ... Read More
Inventors: Tola, Jeffry;, Assignee: General Electric Company (Fort Wayne, IN) |
Method and apparatus for improving planarity of chemical-mechanical planarization operations
The present invention is an improved apparatus and method for performing chemical mechanical planarization on wafer-like substrates. In this disclosure, it should be kept in mind that the term "wafer"... Read More
Inventors: Tuttle, Mark E.; Doan, Trung T.; Fox, Angus C.; Sandhu, Gurtej S.; Stroupe, Hugh E.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Apparatus for bonding textile sheet-like structures
I claim: 1. An apparatus for bonding textile sheet-like structures, especially collars, cuffs and the like, with a rotatably drivable receiving means for further transporting the textile sheet-like st... Read More
Inventors: Inselmann, Jurgen;, Assignee: Herbert Kannegiesser GmbH & Co. (DE) |
IC chemical mechanical planarization process incorporating slurry temperature control
One skilled in the art will appreciate the advantage of the subject VCMP process. Specifically, there is a VCMP process which requires small holders 18. Additionally, the VCMP process incorporates sma... Read More
Inventors: Sandhu, Gurtej S.; Yu, Chris C.;, Assignee: Micron Semiconductor, Inc. (Boise, ID) |
Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
In accordance with the present invention, an improved method for shaping the features of a semiconductor structure is provided. The method of the invention broadly stated, comprises the polishing of a... Read More
Inventors: Kim, Sung C.; Meikle, Scott;, Assignee: Micron Semiconductor, Inc. (Boise, ID) |
Vertically stacked planarization machine
A vertically stacked planarization machine includes two or more vertically stacked individual platens on which wafers are polished. The wafers are held by wafer holders which may rotate the wafers. Th... Read More
Inventors: Clover, Richmond B.;, Assignee: |
Nonmetallic Processes 
